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arXiv 1206.4148physics.optics
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有效增益介质中倏逝波与表面态耦合的超分辨成像

Super-resolution Imaging by Evanescent Wave Coupling to Surface States on Effective Gain Media

Prateek Mehrotra, Chris A. Mack, Richard J. Blaikie

摘要:

对于半导体光刻的更高分辨率要求可以通过更高的数值孔径(NA)系统来满足。然而,大于光致抗蚀剂折射率(~1.7)的NA导致图像的表面限制。在这封信中,我们将描述如何将倏逝波耦合到成像层下方的有效增益介质表面态,以解决这个问题。在λ=193 nm处,SiO2上的蓝宝石层通过有效增益介质共振现象对抗图像衰减,从而允许倏逝干涉光刻在1.85(26 nm)及更高的NA处创建高纵横比结构。

英文摘要:

Higher resolution demands for semiconductor lithography may be fulfilled by higher numerical aperture (NA) systems. However, NAs more than the photoresist refractive index (~1.7) cause surface confinement of the image. In this letter we describe how evanescent wave coupling to effective gain medium surface states beneath the imaging layer can counter this problem. At λ=193 nm a layer of sapphire on SiO2 counters image decay by an effective-gain-medium resonance phenomena allowing evanescent interferometric lithography to create high aspect ratio structures at NAs of 1.85 (26-nm) and beyond.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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