Heusler合金薄膜中的残余无序和扩散
Residual disorder and diffusion in thin Heusler alloy films
摘要：
采用分子束外延技术生长了Co2 FeSi/GaAs（110）和Co2 FeSi/GaAs（111）B混合结构，并用透射电子显微镜（TEM）和X射线衍射（XRD）对其进行了表征。薄膜中含有不均匀分布的有序L2_1和B2相。平均化学计量控制的晶格参数测量，然而扩散过程导致的原子浓度的不均匀性和界面的退化，影响长程序。掠入射X射线衍射测量的平均长程序为30-60%，即生长的Co_2FeSi膜是高度但不完全有序的。利用超晶格反射的暗场TEM图像发现了Co2 FeSi中长程序空间分布的横向不均匀性。
英文摘要：
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(111)B hybrid structures were grown by molecular-beam epitaxy and characterized by transmission electron microscopy (TEM) and X-ray diffraction. The films contained inhomogeneous distributions of ordered L2_1 and B2 phases. The average stoichiometry was controlled by lattice parameter measurements, however diffusion processes lead to inhomogeneities of the atomic concentrations and the degradation of the interface, influencing long-range order. An average long-range order of 30-60% was measured by grazing-incidence X-ray diffraction, i.e. the as-grown Co2FeSi films were highly but not fully ordered. Lateral inhomogeneities of the spatial distribution of long-range order in Co2FeSi were found using dark-field TEM images taken with superlattice reflections.
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