We have studied microwave emission from a current-perpendicular-to-plane pseudo spin valve nanopillars with Heusler alloy Co2Fe(Ga0.5Ge0.5) electrodes. Large emission amplitude exceeding 150 nV/Hz^0.5, partly owing to the large magnetoresistance, and narrow generation linewidth below 10 MHz are observed. We also find that the linewidth shows significant dependence on the applied field magnitude and its angle within the film plane. A minimum in the linewidth is observed when the slope of the frequency versus current becomes near zero. This agrees with theoretical prediction that takes into account non-linear phase noise as a source for linewidth broadening.
We report time-resolved measurements of current-induced reversal of a free magnetic layer in Py/Cu/Py elliptical nanopillars at temperatures T = 4.2 K to 160 K. Comparison of the data to Landau-Lifshitz-Gilbert macrospin simulations of the free layer switching yields numerical values for the spin torque and the Gilbert damping parameters as functions of T. The damping is strongly T-dependent, which we attribute to the antiferromagnetic pinning behavior of a thin permalloy oxide layer around the perimeter of the free layer. This adventitious antiferromagnetic pinning layer can have a major impa…
In all-perpendicular spin valve nanopillars the probability density of the free-layer magnetization is independent of the azimuthal angle and its evolution equation simplifies considerably compared to the general, nonaxisymmetric geometry. Expansion of the time-dependent probability density to Legendre polynomials enables analytical integration of the evolution equation and yields a compact expression for the practically relevant switching probability. This approach is valid when the free layer behaves as a single-domain magnetic particle and it can be readily applied to fitting experimental d…
Nanopillar spin valve devices are typically comprised of two ferromagnetic layers: a reference layer and a free layer whose magnetic orientation can be changed by both an external magnetic field and through the introduction of spin-polarized electric current. Here we report the continuous repeated switching behavior of both the reference and free layers of a perpendicular spin valve made of Co/Pd and Co/Ni multilayers that arises for sufficiently large DC currents. This periodic switching of the two layers produces an oscillating signal in the MHz regime but is only observed for one sign of th…
We study room-temperature generation and detection of pure spin currents using lateral spin-valve devices with Heusler-compound electrodes, Co$_{2}$FeSi (CFS) or Fe$_{3}$Si (FS). The magnitude of the nonlocal spin-valve (NLSV) signals is seriously affected by the dispersion of the resistivity peculiarly observed in the low-temperature grown Heusler compounds with ordered structures. From the analysis based on the one-dimensional spin diffusion model, we find that the spin polarization monotonically increases with decreasing the resistivity, which depends on the structural ordering, for both CF…
We experimentally demonstrate magnetostatic coupling between a nanopillar pseudo spin valve structure and a linear array of dipole coupled Permalloy nanomagnets. Using magnetic force microscopy, we study the interaction between the spin valve and the first element of the array, and present evidence that the nanomagnet couples with the hard layer of the spin valve for two spin valves with distinctly different composition. Our study includes a statistical analysis of antiferromagnetic order within the linear array, and provides insight into the range of behavior that these arrays can display. Th…
We fabricate devices in which a magnetic nanopillar spin valve makes contact to a Co/Pt bilayer thin film with perpendicular magnetic anisotropy, in order to achieve local control of domains in the Co/Pt bilayer underneath the nanopillar. The goal is to develop the ability to nucleate, detect, and annihilate magnetic skyrmions in the Co/Pt using spin-polarized currents from the nanopillar. We demonstrate the ability to distinguish the local behavior of the Co/Pt film beneath the nanopillar from the extended film and show that the two can switch independently of each other. This allows us to is…
Since the discovery of the giant magnetoresistance (GMR) effect the use of the intrinsic angular momentum of the electrons has opened up new spin based device concepts. The two channel model of spin-up and spin-down electrons with spin-dependent conductivities very well describes spin and charge transport in such devices. In studies of the interaction between heat and spin transport, or spin caloritronics, until recently it was assumed that both spin species are always at the same temperature. Here we report the observation of different temperatures for the spin up (T_\uparrow) and spin down (…
Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K). This result is inconsistent with a model of thermal activation over a single perpendicular anisotropy barrier. The correlation between antiparallel to parallel and parallel to antiparallel switching fields increases to nearly 50% at low temperatures. This reflects random fluctuation of the shift of the free layer hysteresis loop between two different magnitudes, which may originate from changes in the dipole field f…
We present switching field distributions of spin-transfer assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of spin-valve nanopillars with a 50 nm x 300 nm ellipse cross section were conducted as a function of current. The validity of a model that assumes a spin-current dependent effective barrier for thermally activated reversal is tested by measuring switching field distributions under applied direct currents. We show that the switching field distributions deviate sig…
We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75 nm diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (mean switching field and switching variance) from 20 K up to 400 K are in disagreement with a Néel-Brown model that assumes a temperature independent barrier height and anisotropy field. We introduce a modified Néel-Brown mod…
We report the free layer switching field distributions of spin-valve nanopillars with perpendicular magnetization. While the distributions are consistent with a thermal activation model, they show a strong asymmetry between the parallel to antiparallel and the reverse transition, with energy barriers more than 50% higher for the parallel to antiparallel transitions. The inhomogeneous dipolar field from the polarizer is demonstrated to be at the origin of this symmetry breaking. Interestingly, the symmetry is restored for devices with a lithographically defined notch pair removed from the midpo…
We have experimentally determined the spin-dependent Seebeck coefficient of permalloy (Ni_{80}Fe_{20}) and cobalt (Co) using nanopillar spin valve devices. The devices were specifically designed to completely separate heat related effects from charge related effects. A pure heat current through the nanopillar spin valve, a stack of two ferromagnetic layers (F) separated by a non-magnetic layer (N), leads to a thermovoltage proportional to the spin-dependent Seebeck coefficient S_{S}=S_{\uparrow}-S_{\downarrow} of the ferromagnet, where S_{\uparrow} and S_{\downarrow} are the Seebeck coefficien…
We investigate the relation between thermal spin-transfer torque (TSTT) and the spin-dependent Seebeck effect (SDSE), which produces a spin current when a temperature gradient is applied across a metallic ferromagnet, in nanopillar metallic spin valves. Comparing its angular dependence (aSDSE) with the angle dependent magnetoresistance (aMR) measurements on the same device, we are able to verify that a small spin heat accumulation builds up in our devices. From the SDSE measurement and the observed current driven STT switching current of 0.8 mA in our spin valve devices, it was estimated that …
We fabricated a current-perpendicular-to-plane pseudo-spin-valve nanopillar comprising a thick and a thin Co rings with deep submicron lateral sizes. The dc current can effectively induce the flux-closure vortex states in the rings with desired chiralities. Abrupt transitions between the vortex states are also realized by the dc current and detected with the giant magnetoresistance effect. Both Oersted field and spin-transfer torque are found important to the magnetic transitions, but the former is dominant. They can be designed to cooperate with each other in the vortex-to-vortex transitions …
We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $μ$V) spin valve signals at room temperature and injector currents of $10^3~$A/cm$^2$, facilitated by fabricating spin valve separations smaller than the 1 $μ$m spin diffusion length and applying a forward bias to the detector contact. The spin transport parameters are measured by comparing the injector-detector contact separation dependence of the spin valve signal with a numerical model accounting for spin drift and diffusion. The a…
We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect curves are demonstrated at low temperatures, indicating generation, manipulation, and detection of pure spin currents in n-Ge. The obtained spin generation efficiency of ~ 0.12 is about two orders of magnitude larger than that for a device with Fe/MgO tunnel-barrier contacts reported previously. Taking the spin related behavior with temperature evolution into account, we infer that it is necessary to simultaneously demo…
In the recent decade, the family of Heusler compounds has attracted tremendous scientific and technological interest in the field of spintronics. This is essentially due to their exceptional magnetic properties, which qualify them as promising functional materials in various data-storage devices, such as giant-magnetoresistance spin valves, magnetic tunnel junctions, and spin-transfer torque devices. In this article, we provide a comprehensive review on the applications of the Heusler family in magnetic data storage. In addition to their important roles in the performance improvement of these …
We demonstrate electrical spin injection into multilayer graphene (MLG) in a lateral spin valve device from a highly spin-polarized Co2FeSi (CFS) Huesler electrode. Exfoliated MLG was transferred onto pre-patterned epitaxial CFS wires grown on an Si(111) substrate by a polymer-based transfer method. This method enabled us to fabricate multiple single-crystal CFS electrodes in contact with MLG. Electrical spin injection from CFS to MLG was detected through non-local magnetoresistance (MR) measurement. A non-local spin signal of 430 ohm was observed; this is the largest value among all reported …
Spin transfer torque in spin valves usually destabilizes one of the collinear configurations (either parallel or antiparallel) and stabilizes the second one. Apart from this, balance of the spin-transfer and damping torques can lead to steady precessional modes. In this letter we show that in some asymmetric nanopillars spin current can destabilize both parallel and antiparallel configurations. As a result, stationary precessional modes can occur at zero magnetic field. The corresponding phase diagram as well as frequencies of the precessional modes have been calculated in the framework of mac…
Spin-transfer torque and current induced spin dynamics in spin-valve nanopillars with the free magnetic layer located between two magnetic films of fixed magnetic moments is considered theoretically. The spin-transfer torque in the limit of diffusive spin transport is calculated as a function of magnetic configuration. It is shown that non-collinear magnetic configuration of the outermost magnetic layers has a strong influence on the spin torque and spin dynamics of the central free layer. Employing macrospin simulations we make some predictions on the free layer spin dynamics in spin valves c…
An anomalous (inverse) spin accumulation in the nonmagnetic spacer may build up when the spin valve consists of magnetic films having different spin symmetries. This leads to wavy-like dependence of spin-transfer torque on the angle between magnetizations, as predicted by spin-dependent diffusive transport model, and also confirmed experimentally. Making use of these predictions, we have numerically studied the magnetization dynamics in presence of such a wavy-torque in Co(8 nm)/Cu(10 nm)/Py(8 nm) nanopillar, considering geometry with extended and etched Co layer. In both cases we specify cond…
We present a study of the pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ballistic regime at low temperature. The dilute permalloy free layer device switches much faster: the characteristic switching time for a permalloy free (Ni0.83Fe0.17) layer device is 1.18 ns, while that for a dilute permalloy ([Ni0.83Fe0.17]0.6Cu0.4) free layer device is 0.475 ns. A ballistic macrospin model can capture the data trends with a reduced spin torque asymmetry parameter, reduced spin polarization and incre…
We present an experimental study of vortex dynamics in magnetic nanocontacts based on pseudo spin valves comprising the Co$_2$MnGe Heusler compound. The films were grown by molecular beam epitaxy, where precise stoichiometry control and tailored stacking order allowed us to define the bottom ferromagnetic layer as the reference layer, with minimal coupling between the free and reference layers. 20-nm diameter nanocontacts were fabricated using a nano-indentation technique, leading to self-sustained gyration of the vortex generated by spin-transfer torques above a certain current threshold. By …
We demonsrtate electrical spin injection and detection in $n$-type Ge ($n$-Ge) at room temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in lateral spin-valve (LSV) devices with Heusler-alloy Schottky tunnel contacts. The spin diffusion length ($λ$$_{\rm Ge}$) of the Ge layer used ($n \sim$ 1 $\times$ 10$^{19}$ cm$^{-3}$) at 296 K is estimated to be $\sim$ 0.44 $\pm$ 0.02 $μ$m. Room-temperature spin signals can be observed reproducibly at the low bias voltage range ($\le$ 0.7 V) for LSVs with relatively low resistance-area product ($RA$) values ($\le$ 1 k$Ω$$μ$m…
We have employed complete micromagnetic simulations to analyze dc current driven self-oscillations of a vortex core in a spin-valve nanopillar in a perpendicular field by including the coupled effect of the spin-torque and the magnetostatic field computed self-consistently for the entire spin-valve. The vortex in the thicker nanomagnet moves along a quasi-elliptical trajectory that expands with applied current, resulting in blue-shifting of the frequency, while the magnetization of the thinner nanomagnet is non-uniform due to the bias current. The simulations explain the experimental magnetore…
We study the synchronization of the auto-oscillation signal generated by the spin transfer driven dynamics of two coupled vortices in a spin-valve nanopillar to an external source. Phase-locking to the microwave field hrf occurs in a range larger than 10% of the oscillator frequency for drive amplitudes of only a few Oersteds. Using synchronization at the double frequency, the generation linewidth is found to decrease by more than five orders of magnitude in the phase-locked regime (down to 1 Hz, limited by the resolution bandwidth of the spectrum analyzer) in comparison to the free running re…
Generation, manipulation, and detection of a pure spin current, i.e., the flow of spin angular momentum without a charge current, are prospective approaches for realizing next-generation spintronic devices with ultra low electric power consumptions. Conventional ferromagnetic electrodes such as Co and NiFe have so far been utilized as a spin injector for generating the pure spin currents in nonmagnetic channels. However, the generation efficiency of the pure spin currents is extremely low at room temperature, giving rise to a serious obstacle for device applications. Here, we demonstrate the g…
We fabricated Co nano-rings incorporated in the vertical pseudo-spin-valve nanopillar structures with deep submicron lateral sizes. It is shown that the current-perpendicular-to-plane giant magnetoresistance can be used to characterize a very small magnetic nano-ring effectively. Both the onion state and the flux-closure vortex state are observed. The Co nano-rings can be switched between the onion states as well as between onion and vortex states not only by the external field but also by the perpendicularly injected dc current.
We develop a three dimensional semiclassical theory which generalizes the Valet-Fert model in order to account for non-collinear systems with magnetic texture, including e.g. domain walls or magnetic vortices. The theory allows for spin transverse to the magnetization to penetrate inside the ferromagnet over a finite length and properly accounts for the Sharvin resistances. For ferromagnetic-normal-ferromagnetic multilayers where the current is injected in the plane of the layers (CIP), we predict the existence of a non zero mesoscopic CIP Giant Magneto-Resistance (GMR) at the diffusive level.…
