We develop a three dimensional semiclassical theory which generalizes the Valet-Fert model in order to account for non-collinear systems with magnetic texture, including e.g. domain walls or magnetic vortices. The theory allows for spin transverse to the magnetization to penetrate inside the ferromagnet over a finite length and properly accounts for the Sharvin resistances. For ferromagnetic-normal-ferromagnetic multilayers where the current is injected in the plane of the layers (CIP), we predict the existence of a non zero mesoscopic CIP Giant Magneto-Resistance (GMR) at the diffusive level. This mesoscopic CIP-GMR, which adds to the usual ballistic contributions, has a non monotonic spatial variation and is reminiscent of conductance quantization in the layers. Furthermore, we study the spin transfer torque in spin valve nanopillars. We find that when the magnetization direction is non uniform inside the free layer, the spin torque changes very significantly and simple one-dimensional calculations cease to be reliable.
We study the four-terminal resistance fluctuations of mesoscopic samples near the transition between the $ν=2$ and the $ν=1$ quantum Hall states. We observe near-perfect correlations between the fluctuations of the longitudinal and Hall components of the resistance. These correlated fluctuations appear in a magnetic-field range for which the two-terminal resistance of the samples is quantized. We discuss these findings in light of edge-state transport models of the quantum Hall effect. We also show that our results lead to an ambiguity in the determination of the width of quantum Hall transiti…
The symmetry properties of the resistance of mesoscopic samples in the quantum Hall regime are investigated. In addition to the reciprocity relation, our samples obey new symmetries, that relate resistances measured with different contact configurations. Different kinds of symmetries are identified, depending on whether the magnetic field value is such that the system is above, or below, a quantum Hall transition. Related symmetries have recently been reported for macroscopic samples in the quantum Hall regime by Ponomarenko {\it et al.} (Solid State Commun. {\bf 130}, 705 (2004)), and Karmaka…
We calculate the tunnelling resistance at the quantum critical point of a mesoscopic SQUIDs array in the presence of magnetic flux. We find the analytical relation between the magnetic flux induced dissipation strength and the Luttinger liquid parameter of the system. While the experimental finding for the system is around 40-50 mK, we find the behavior of the system even at lower temperatures through the analysis of renormalization group. Apart from the length scale dependent superconductor-insulator transition, we also predict the evidence of length scale independent metallic state. This stu…
We present measurements of mesoscopic resistance fluctuations in cobalt nanoparticles and study how the fluctuations with bias voltage, bias fingerprints, respond to magnetization reversal processes. Bias fingerprints rearrange when domains are nucleated or annihilated. The domain-wall causes an electron wavefunction phase-shift of $\approx 5π$. The phase-shift is not caused by the Aharonov-Bohm effect; we explain how it arises from the mistracking effect, where electron spins lag in orientation with respect to the moments inside the domain-wall. Dephasing time in Co at $0.03K$ is short, $τ_ϕ\…
Transport measurements were made on four-terminal devices fabricated from InSb/Al_xIn_(1-x)Sb quantum well structures at temperatures from 1.5 to 300K. Negative bend resistance, which is characteristic of ballistic transport, was observed in devices of channel widths 0.2 or 0.5 μm. We have improved upon the existing implementations of R-matrix theory in device physics by introducing boundary conditions that dramatically speed convergence. By comparison with R-matrix calculations, we show that the experimental observations are consistent with quantum coherent transport.
A nonlinear single-particle model is introduced, which captures the characteristic of systems in the quantum Hall regime. The model entails the magnetic Shrödinger equation with spatially variable magnetic flux density. The distribution of flux is prescribed via the postulates of the mesoscopic mechanics (MeM) introduced in my previous articles [cf. J. Phys. Chem. Solids, 65 (2004), 1507-1515; J. Geom. Phys., Vol. 55/1 (2005), 1-18]. The model is found to imply exact integer and fractional quantization of the Hall conductance. In fact, Hall resistance is found to be $R_H = \frac{h}{2e^2}\frac{…
Electric field effect devices based on mesoscopic graphite are fabricated for galvanomagnetic measurements. Strong modulation of magneto-resistance and Hall resistance as a function of gate voltage is observed as sample thickness approaches the screening length. Electric field dependent Landau level formation is detected from Shubnikov de Haas oscillations in magneto-resistance. The effective mass of electron and hole carriers has been measured from the temperature dependant behavior of these oscillations.
An atomic force microscope is used to structure a film of multilayer graphene. The resistance of the sample was measured in-situ during nanomachining narrow trenches. We found a reversible behavior in the electrical resistance which we attribute to the movement of dislocations. After several attempts also permanent changes are observed.
We consider charge relaxation in the mesoscopic equivalent of an RC circuit. For a single-channel, spin-polarized contact, self-consistent scattering theory predicts a universal charge relaxation resistance equal to half a resistance quantum independent of the transmission properties of the contact. This prediction is in good agreement with recent experimental results. We use a tunneling Hamiltonian formalism and show in Hartree-Fock approximation, that at zero temperature the charge relaxation resistance is universal even in the presence of Coulomb blockade effects. We explore departures from…
We present an analysis of the effect of dephasing on the single channel charge relaxation resistance of a mesoscopic capacitor in the linear low frequency regime. The capacitor consists of a cavity which is via a quantum point contact connected to an electron reservoir and Coulomb coupled to a gate. The capacitor is in a perpendicular high magnetic field such that only one (spin polarized) edge state is (partially) transmitted through the contact. In the coherent limit the charge relaxation resistance for a single channel contact is independent of the transmission probability of the contact an…
We examine oscillations as a function of Fermi energy in the capacitance of a mesoscopic cavity connected via a single quantum channel to a metallic contact and capacitively coupled to a back gate. The oscillations depend on the distribution of single levels in the cavity, the interaction strength and the transmission probability through the quantum channel. We use a Hartree-Fock approach to exclude self-interaction. The sample specific capacitance oscillations are in marked contrast to the charge relaxation resistance, which together with the capacitance defines the RC-time, and which for spi…
We present a description of spin-polarized transport in mesoscopic ferromagnet-superconductor (F/S) systems, where the transport is diffusive, and the interfaces are transparent. It is shown that the spin reversal associated with Andreev reflection generates an excess spin density close to the F/S interface, which leads to a spin contact resistance. Expressions for the contact resistance are given for two terminal and four terminal geometries. In the latter the sign depends on the relative magnetization of the ferromagnetic electrodes.
A brief overview is presented of recent work which investigates the time-dependent relaxation of charge and its spontaneous fluctuations on mesoscopic conductors in the proximity of gates. The leading terms of the low frequency conductance are determined by a capacitive or inductive emittance and a dissipative charge relaxation resistance. The charge relaxation resistance is determined by the ratio of the mean square dwell time of the carriers in the conductor and the square of the mean dwell time. The contribution of each scattering channel is proportional to half a resistance quantum. We dis…
We study theoretically dynamic response of a mesoscopic capacitor, which consists of a quantum dot connected to an electron reservoir via a point contact and capacitively coupled to a gate voltage. A quantum Hall edge state with a filling factor nu is realized in a strong magnetic field applied perpendicular to the two-dimensional electron gas. We discuss a noise-driven quantum phase transition of the transport property of the edge state by taking into account an ohmic bath connected to the gate voltage. Without the noise, the charge relaxation for nu>1/2 is universally quantized at R_q=h/(2e^…
The transport properties of a rectangular mesoscopic plaquette in the presence of a perpendicular magnetic field are studied in a tight-binding model with randomly distributed traps. The longitudinal and Hall resistances are calculted in the four-probe Landauer-Büttiker formalism which accounts automatically both for the quantum coherence and the trapping-induced localization. The localized character of eigenvectors and the specific aspect of the density of states at a given magnetic flux are correlated with the behaviour of the mentioned resistances as function of the Fermi energy. The Hall i…
We study spin-dependent transport through ferromagnet/normal-metal/ferromagnet double tunnel junctions in the mesoscopic Coulomb blockade regime. A general transport equation allows us to calculate the conductance in the absence or presence of spin-orbit interaction and for arbitrary orientation of the lead magnetizations. The tunneling magnetoresistance (TMR), defined at the Coulomb blockade conductance peaks, is calculated and its probability distribution presented. We show that mesoscopic fluctuations can lead to the optimal value of the TMR.
We report the observation of negative nonlocal resistances in multiterminal mesoscopic gold Hall bar structures whose characteristic dimensions are larger than the electron mean-free path. Our results can only be partially explained by a classical diffusive model of the nonlocal transport, and are not consistent with a recently proposed model based on spin Hall effects. Instead, our analysis suggests that a quasiballistic transport mechanism is responsible for the observed negative nonlocal resistance. Based on the sensitivity of our measurements and the spin Hall effect model, we find an uppe…
The crystal structure of bulk SrTiO$_3$(STO) transitions from cubic to tetragonal at around 105K. Recent local scanning probe measurements of LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces indicated the existence of spatially inhomogeneous electrical current paths and electrostatic potential associated with the structural domain formation in the tetragonal phase of STO. However, how these effects impact the electron conduction in LAO/STO devices has not been fully studied. Here we report a study of temperature dependent electronic transport in combination with the polarized light microscopy of struc…
In the presence of shot noise the charge on a mesoscopic conductor fluctuates. We are interested in the charge fluctuations which arise if the conductor is in the proximity of a gate to which it is coupled by long range Coulomb forces only. Specifically we consider a gate coupled to the edge of a Hall bar subject to a quantizing magnetic field which contains a quantum point contact. The gate is located away from the quantum point contact. We evaluate the charge relaxation resistance for this geometry. The charge relaxation resistance determines the current fluctuations and potential fluctuatio…
We perform first principles numerical simulations to investigate resistance fluctuations in mesoscopic samples, near the transition between consecutive Quantum Hall plateaus. We use six-terminal geometry and sample sizes similar to those of real devices. The Hall and longitudinal resistances extracted from the generalized Landauer formula reproduce all the experimental features uncovered recently. We then use a simple generalization of the Landauer-Büttiker model, based on the interplay between tunneling and chiral currents -- the co-existing mechanisms for transport -- to explain the three di…
We calculate the average polarisability of two dimensional mesoscopic rings in the presence of an Aharonov-Bohm flux. The screening is taken into account self-consistently within a mean-field approximation. We investigate the effects of statistical ensemble, finite frequency and disorder. We emphasize geometrical effects which make the observation of field dependent polarisability much more favourable on rings than on disks or spheres of comparable radius. The ratio of the flux dependent to the flux independent part is estimated for typical GaAs rings.
We consider the electronic transport in multi-terminal mesoscopic networks of weakly disordered metallic wires. After a brief description of the classical transport, we analyze the weak localisation (WL) correction to the four-terminal resistances, which involves an integration of the Cooperon over the wires with proper weights. We provide an interpretation of these weights in terms of classical transport properties. We illustrate the formalism on examples and show that weak localisation to four-terminal conductances may become large in some situations. In a second part, we study the correlati…
We have studied the force in mesoscopic wires in the presence of an external magnetic field along the wire using a free electron model. We show that the applied magnetic field can be used to affect the force in the wire. The magnetic field breaks the degeneracy of the eigenenergies of the conduction modes, resulting in more structure in the force as a function of wire length. The use of an external magnetic field is an equilibrium method to control the number of transporting channels. Under the least favorable circumstances (on the middle of a low conduction step) one needs about 1.3 T, for a …
We report non-local electrical measurements in a mesoscopic size two-dimensional (2D) electron gas in a GaAs quantum well in a hydrodynamic regime. Viscous electric flow is expected to be dominant when electron-electron collisions occur more often than the impurity or phonon scattering events. We observe a negative nonlocal resistance and attribute it to the formation of whirlpools in the electron flow. We use the different nonlocal transport geometries and compare the results with a theory demonstrating the significance of hydrodynamics in mesoscopic samples.
It is shown that the dephasing rate in Coulomb coupled mesoscopic structures is determined by charge relaxation resistances. The charge relaxation resistance together with the capacitance determines the RC-time of the mesoscopic structure and at small frequencies determines the voltage fluctuation spectrum. Self-consistent expressions are presented which give the charge relaxation resistance and consequently the dephasing rate in terms of the diagonal and off-diagonal elements of a generalized Wigner-Smith delay-time matrix. Dephasing rates are discussed both for the equilibrium state and in t…
We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations. Focusing on the lowest Landau level we find that, while the diagonal resistivity displays strong fluctuations, the Hall resistivity is free of fluctuations and remains quantized at its $ν=1$ value, $h/e^{2}$. This is true also in the insulating phase that terminates the quantum Hall series. These results extend the validity of the semicircle law of conductivity i…
Quantitative thermoelectric measurements in the mesoscopic regime require accurate knowledge of temperature, thermovoltage, and device energy scales. We consider the effect of a finite load resistance on thermovoltage measurements of InAs/InP heterostructure nanowires. Load resistance and ac attenuation distort the measured thermovoltage therefore complicating the evaluation of device performance. Understanding these effects improves experimental design and data interpretation.
We consider a one dimensional mesoscopic capacitor in the presence of strong electron interactions and compute its admittance in order to probe the universal nature of the relaxation resistance. We use a combination of perturbation theory, renormalization group arguments, and quantum Monte Carlo calculation to treat the whole parameter range of dot-lead coupling. The relaxation resistance is universal even in the presence of strong Coulomb blockade when the interactions in the wire are sufficiently weak. We predict and observe a quantum phase transition to an incoherent regime for a Luttinger …
Electronic transport in a one-dimensional mesoscopic ring threaded by a magnetic flux is studied in presence of Rashba and Dresselhaus spin-orbit interactions. A completely analytical technique within a tight-binding formalism unveils the spin-split bands in presence of the spin-orbit interactions and leads to a method of determining the strength of the Dresselhaus interaction. In addition to this, the persistent currents for ordered and disordered rings have been investigated numerically. It is observed that, the presence of the spin-orbit interaction, in general, leads to an enhanced amplitu…
We report electrical and magneto transport measurements in mesoscopic size, two-dimensional (2D) electron gas in a GaAs quantum well. Remarkably, we find that the probe configuration and sample geometry strongly affects the temperature evolution of local resistance. We attribute all transport properties to the presence of hydrodynamic effects. Experimental results confirm the theoretically predicted significance of viscous flow in mesoscopic devices.
An approach to experimentally exploring electronic correlation functions in mesoscopic regimes is proposed. The idea is to monitor the mesoscopic fluctuations of a tunneling current flowing between the two layers of a semiconductor double-quantum-well structure. From the dependence of these fluctuations on external parameters, such as in-plane or perpendicular magnetic fields, external bias voltages, etc., the temporal and spatial dependence of various prominent correlation functions of mesoscopic physics can be determined. Due to the absence of spatially localized external probes, the method …
The current through ferromagnetic single-electron transistors (SET's) is considered. Using path integrals the linear response conductance is formulated as a function of the tunnel conductance vs. quantum conductance and the temperature vs. Coulomb charging energy. The magneto-resistance of ferromagnet-normal metal-ferromagnet (F-N-F) SET's is almost independent of the Coulomb charging energy and is only reduced when the transport dwell time is longer than the spin-flip relaxation time. In all-ferromagnetic (F-F-F) SET's with negligible spin-flip relaxation time the magneto-resistance is calcul…
Electronic transport in closed loop structures is addressed within a tight-binding formalism and in the presence of both the Rashba and Dresselhaus spin-orbit interactions. It has been shown that any one of the spin-orbit fields can be estimated precisely if the other one is known, by observing either the transmission resonance or anti-resonance of unpolarized electrons. The result is obtained through an exact analytic calculation for a simple square loop, and through a numerically exact formulation for a circular ring. The sensitivity of the transport properties on the geometry of the interfe…
In order to understand how screening is modified by electronic interferences in a mesoscopic isolated system, we have computed both analytically and numerically the average thermodynamic and time dependent polarisabilities of two dimensional mesoscopic samples in the presence of an Aharonov-Bohm flux. Two geometries have been considered: rings and squares. Mesoscopic correction to screening are taken into account in a self consistent way, using the response function formalism. The role of the statistical ensemble (canonical and grand canonical), disorder and frequency have been investigated. W…
We confirm the existance of magneto-resistance oscillations in a microwave-irradiated two-dimensional electron gas, first reported in a series of papers by Zhudov et al. and Mani et al. In our experiments, on a sample with a more moderate mobility, the microwave induced oscillations are observed not only in the longitudinal - but also in the transverse-resistance (Hall resistance). The phase of the oscillations is such that the decrease (increase) in the longitudinal resistance is accompanied by an increase (decrease) in the absolute value of the Hall resistance. We believe that these new resu…
We investigate magneto-transport properties of a $θ$ shaped three-arm mesoscopic ring where the upper and lower sub-rings are threaded by Aharonov-Bohm fluxes $ϕ_1$ and $ϕ_2$, respectively, within a non-interacting electron picture. A discrete lattice model is used to describe the quantum network in which two outer arms are subjected to binary alloy lattices while the middle arm contains identical atomic sites. It is observed that the presence of the middle arm provides localized states within the band of extended regions and lead to the possibility of switching action from a high conducting s…
The large tunneling anisotropic magneto-resistance of a single $p^{++}$-(Ga,Mn)As/$n^{+}$-GaAs Zener-Esaki diode is evidenced in a perpendicular magnetic field over a large temperature and voltage range. Under an applied bias, the tunnel junction transparency is modified, allowing to continuously tune anisotropic transport properties between the tunneling and the ohmic regimes. Furthermore, an asymmetric bias-dependence of the anisotropic tunneling magneto-resistance is also observed: a reverse bias highlights the full (Ga,Mn)As valence band states contribution, whereas a forward bias only pro…
We study the electrical injection and detection of spin currents in a lateral spin valve device, using permalloy (Py) as ferromagnetic injecting and detecting electrodes and copper (Cu) as non-magnetic metal. Our multi-terminal geometry allows us to experimentally distinguish different magneto resistance signals, being 1) the spin valve effect, 2) the anomalous magneto resistance (AMR) effect and 3) Hall effects. We find that the AMR contribution of the Py contacts can be much bigger than the amplitude of the spin valve effect, making it impossible to observe the spin valve effect in a 'conven…
We have investigated the Aharonov-Bohm effect in mesoscopic semiconductor GaAs/GaAlAs rings in low magnetic fields. The oscillatory magnetoconductance of these systems is systematically studied as a function of electron density. We observe phase-shifts of $π$ in the magnetoconductance oscillations, and halving of the fundamental $h/e$ period, as the density is varied. Theoretically we find agreement with the experiment, by introducing an asymmetry between the two arms of the ring.
We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi2Te3, and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi2Se3 nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room tempe…
We have observed a large positive quasi-classical magneto-resistance (MR) in a high mobility 2D electron gas in AlGaAs/GaAs heterostructure. The magneto-resistance is non-saturating and increases with magnetic field as $ρ_{xx}\sim B^α (α=0.9-1.2)$. In antidot lattices a non-monotonic MR is observed. We show that in both cases this MR can be qualitatively described in terms of the theory recently advanced by Polyakov et al (PRB, 64, 205306 (2001)). Their prediction is that such behavior as we observe may be the consequence of a concurrent existence of short and long range scattering potentials.
We investigate in a nonperturbative way the dynamics of a correlated quantum capacitor. We find that the many-body correlations do not disturb the universal low-frequency relaxation resistance per channel, $R_q(ω=0) = h/4e^2$ ensured by the Korringa-Shiba rule whereas the interpretation of the quantum capacitance $C_q$ in terms of the density of states fails when strong correlations are present. The AC resistance $R_q(ω)$ shows huge peaks (with values larger than $h/4e^2$) at $\hbarω\approx \pm Γ^*$, where $Γ^*$ is the renormalized level broadening. These peaks are merged to a single one at $ω…
We investigate the origin of the resistance fluctuations of mesoscopic samples, near transitions between Quantum Hall plateaus. These fluctuations have been recently observed experimentally by E. Peled et al. [Phys. Rev. Lett. 90, 246802 (2003); ibid 90, 236802 (2003); Phys. Rev. B 69, R241305 (2004)]. We perform realistic first-principles simulations using a six-terminal geometry and sample sizes similar to those of real devices, to model the actual experiment. We present the theory and implementation of these simulations, which are based on the linear response theory for non-interacting elec…
In a mesoscopic conductor electric resistance is detected even if the device is defect-free. We engineer and study a cold-atom analog of a mesoscopic conductor. It consists of a narrow channel connecting two macroscopic reservoirs of fermions that can be switched from ballistic to diffusive. We induce a current through the channel and find ohmic conduction, even for a ballistic channel. An analysis of in-situ density distributions shows that in the ballistic case the chemical potential drop occurs at the entrance and exit of the channel, revealing the presence of contact resistance. In contras…
We experimentally study spin accumulation in an aluminium island with all dimensions smaller than the spin relaxation length, so that the spin imbalance throughout the island is uniform. Electrical injection and detection of the spin accumulation are carried out in a four terminal geometry by means of four cobalt electrodes connected to the island through tunnel barriers. We model the system theoretically and we investigate the role of the ferromagnetic electrodes on the spin accumulation at the limit at which the electron diffusion time can be neglected. We present measurements of spin accumu…
We observe the phonon-drag voltage oscillations correlating with the resistance oscillations under microwave irradiation in a two-dimensional electron gas in perpendicular magnetic field. This phenomenon is explained by the influence of dissipative resistivity modified by microwaves on the phonon-drag voltage perpendicular to the phonon flux. When the lowest-order resistance minima evolve into zero-resistance states, the phonon-drag voltage demonstrates sharp features suggesting that current domains associated with these states can exist in the absence of external dc driving.
We undertake an in-depth analysis of the magneto-transport properties in mesoscopic single-channel rings and multi-channel cylinders within a tight-binding formalism. The main focus of this review is to illustrate how the long standing anomalies between the calculated and measured current amplitudes carried by a small conducting ring upon the application of a magnetic flux $ϕ$ can be removed. We discuss two different cases. First, we examine the combined effect of second-neighbor hopping integral and Hubbard correlation on the enhancement of persistent current in presence of disorder. A signif…
We discuss the low-frequency response of charge and heat transport to oscillatory voltage and temperature shifts in mesoscopic capacitors. We obtain within scattering theory generic expressions for the quantum admittances up to second order in the ac frequencies in terms of electric, thermoelectric and heat capacitances and relaxation resistances. Remarkably, we find that the thermocurrent can lead or lag the applied temperature depending on the gate voltage applied to a quantum $RC$ circuit. Furthermore, the relaxation resistance for cross terms becomes nonuniversal as opposed to the purely e…
Magneto-resistance is a physical effect of great fundamental and industrial interest since it is the basis for the magnetic field sensors used in computer read-heads and Magnetic Random Access Memories. As device dimensions are reduced, some important physical length scales for magnetism and electrical transport will soon be attained. Ultimately, there is a strong need to know if the physical phenomena responsible for magneto-resistance still hold at the atomic scale. Here, we show that the anisotropy of magneto-resistance is greatly enhanced in atomic size constrictions. We explain this physi…
We present electrical transport experiments performed on submicron hybrid devices made of a ferromagnetic conductor (Co) and a superconducting (Al) electrode. The sample was patterned in order to separate the contributions of the Co conductor and of the Co-Al interface. We observed a strong influence of the Al electrode superconductivity on the resistance of the Co conductor. This effect is large only when the interface is highly transparent. We characterized the dependence of the observed resistance decrease on temperature, bias current and magnetic field. As the differential resistance of th…
We report on high-field angle-dependent magneto-transport measurements on epitaxial thin films of Bi2Se3, a three-dimensional topological insulator. At low temperature, we observe quantum oscillations that demonstrate the simultaneous presence of bulk and surface carriers. The magneto- resistance of Bi2Se3 is found to be highly anisotropic. In the presence of a parallel electric and magnetic field, we observe a strong negative longitudinal magneto-resistance that has been consid- ered as a smoking-gun for the presence of chiral fermions in a certain class of semi-metals due to the so-called ax…
Mesoscopic loop is proposed in many works as possible solid-state quantum bit, i.e. two-state quantum system. The quantum oscillations of resistance and of rectified voltage observed on asymmetric superconducting loops give evidence of the two states at magnetic flux divisible by half of the flux quantum. But our measurements of quantum oscillations of the critical current of these loops have given results coming into irreconcilable contradictions with result of the observations of the quantum oscillations of resistance.
We report on the magneto-transport properties of chemical vapor deposition grown films of interconnected Bi2Te3 nanoplates. Similar to many other topological insulator (TI) materials, these granular Bi2Te3 films exhibit a linear magneto-resistance (LMR) effect which has received much recent attention. Studying samples with different degree of granularity, we find a universal correlation between the magnitude of the LMR and the average mobility (<μ>) of the films over nearly two orders of magnitude change of <μ>. The granularity controlled LMR effect here is attributed to the mobility fluctuati…
Zero-Resistance States (ZRS) are normally associated with superconducting and quantum Hall phases. Experimental detection of ZRS in two-dimensional electron gas (2DEG) systems irridiated by microwave(MW) radiation in a magnetic field has been quite a surprise. We develop a semiclassical transport formalism to explain the phenomena. We find a sequence of Zero-Resistance States (ZRS) inherited from the suppression of Shubnikov-de Haas (SdH) oscillations under the influence of high-frequency and large amplitude microwave radiation. Furthermore, the ZRS are well pronounced and persist up to broad …
We obtain exact analytical expressions for the electronic transport through a multi-channel system, also with an applied magnetic field. The geometrical structure of the electrodes is found to cause a splitting of the conduction band into many subbands, depending on the number and the length of the chains and the conductance approaches zero when the chain number is sufficiently large, due to quantum interference. In the presence of a magnetic field a very complicated oscillatory behavior of the conductance is found with a very sensitive dependence on the number of chains and their lengths, in …
We consider a two-dimensional magnetic tunnel junction of the FM/I/QW(FM+SO)/I/N structure, where FM, I and QW(FM+SO) stand for a ferromagnet, an insulator and a quantum wire (QW) with both magnetic ordering and Rashba spin-orbit (SOC), respectively. The tunneling magneto-resistance (TMR) exhibits strong anisotropy and switches sign as the polarization direction varies relative to the QW axis, due to interplay among the one-dimensionality, the magnetic ordering, and the strong SOC of the QW. The results may provide a possible explanation for the sign-switching anisotropic TMR recently observed…
