Ge（111）衬底上非化学计量Heusler合金Fe_3-xMn_xSi外延膜的铁磁性和电子结构
Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe_3-xMn_xSi Epilayers Grown on Ge(111)
摘要：
为了研究与IV族半导体自旋电子学兼容的铁磁材料，我们证明了通过调节Mn组分x来控制外延生长在Ge（111）上的Heusler合金Fe_3-xMn_xSi的铁磁性质。有趣的是，我们得到的L2_1有序结构，即使非化学计量的原子组成。x ~ 0.6的外延层的居里温度超过300 K。理论计算表明，当0.75 < x < 1.5时，非化学计量比Fe_3-xMn_xSi合金的电子结构变为半金属结构。讨论了室温下制备高自旋极化的铁磁Fe_3-xMn_xSi/Ge外延层的可能性。
英文摘要：
For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloys Fe_3-xMn_xSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L2_1-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x ~ 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe_3-xMn_xSi alloys become half-metallic for 0.75 < x < 1.5. We discuss the possibility of room-temperature ferromagnetic Fe_3-xMn_xSi/Ge epilayers with high spin polarization.
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