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arXiv 1206.1371cond-mat.mes-hall
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量子点接触后向散射中电子的干涉

Interference of electrons in backscattering through a quantum point contact

A. A. Kozikov, C. Rössler, T. Ihn, K. Ensslin, C. Reichl, W. Wegscheider

摘要:

利用扫描栅显微镜研究了GaAs/AlGaAs异质结中高迁移率二维电子气的电子输运。使用量子点接触(QPC),我们观察到的分支所造成的电子背散射装饰与干涉条纹类似Topinka等人以前的观察。我们调查的分支在不同的点的电导高原以及高原之间,并证明分支模式发生最显着的变化在低能量侧的电导高原。分支消失在磁场低至50 mT,证明了反向散射的重要性,观察的分支效应。干涉条纹之间的间距变化超过50%的不同分支跨越微米尺度。几种情况进行了讨论,以解释这一观察。

英文摘要:

Scanning gate microscopy is used to locally investigate electron transport in a high-mobility two-dimensional electron gas formed in a GaAs/AlGaAs heterostructure. Using quantum point contacts (QPC) we observe branches caused by electron backscattering decorated with interference fringes similar to previous observations by Topinka et al. We investigate the branches at different points of a conductance plateau as well as between plateaus, and demonstrate that the most dramatic changes in branch pattern occur at the low-energy side of the conductance plateaus. The branches disappear at magnetic fields as low as 50 mT demonstrating the importance of backscattering for the observation of the branching effect. The spacing between the interference fringes varies by more than 50% for different branches across scales of microns. Several scenarios are discussed to explain this observation.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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