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arXiv 1204.2187physics.atom-ph
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W^20+(4d^10 4f^8)的双电子复合:半开f壳层的研究

Dielectronic recombination of W^20+ (4d^10 4f^8): addressing the half-open f-shell

N. R. Badnell, C. P. Ballance, D. C. Griffin, M. O'Mullane

摘要:

最近对W^20+的双电子复合(DR)的测量[Schippers et al Phys.Rev.A83,012711(2011)]发现了来自近阈值共振(<1 eV)的异常大的贡献。这仍然影响麦克斯韦速率系数在更高的温度。实验结果被发现是一个因素4或更多的比目前使用的100- 300 eV的范围内,这是相关的建模磁聚变等离子体。我们用AUTOSTRUCTURE进行了DR计算,其中包括所有重要的单电子提升。我们的中间耦合(IC)结果比我们在1 eV处的LS耦合结果大4倍以上,但仍然比实验低3倍。如果我们假设近阈值自电离态的完全(混沌)混合,那么我们的结果与低于约2 eV的实验一致(在20%以内)。在100- 300 eV范围内,我们得到的总的IC麦克斯韦速率系数比实验值小50-30%。

英文摘要:

A recent measurement of the dielectronic recombination (DR) of W^20+ [Schippers et al Phys. Rev. A83, 012711 (2011)] found an exceptionally large contribution from near threshold resonances (<1eV). This still affected the Maxwellian rate coefficient at much higher temperatures. The experimental result was found to be a factor 4 or more than that currently in use in the 100-300eV range which is of relevance for modeling magnetic fusion plasmas. We have carried-out DR calculations with AUTOSTRUCTURE which include all significant single electron promotions. Our intermediate coupling (IC) results are more than a factor of 4 larger than our LS-coupling ones at 1eV but still lie a factor 3 below experiment here. If we assume complete (chaotic) mixing of near-threshold autoionizing states then our results come into agreement (to within 20%) with experiment below about 2eV. Our total IC Maxwellian rate coefficients are 50-30% smaller than those based-on experiment over 100-300eV.

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