硅基非极性AlN/GaN同轴纳米线谐振隧道二极管
Coaxial Nanowire Resonant Tunneling Diodes from non-polar AlN/GaN on Silicon
摘要：
利用等离子体辅助分子束外延技术在n-Si（111）衬底上生长AlN/GAN核壳纳米线异质结，制备了共振隧穿二极管。通过使用同轴几何形状，这些装置利用非极性（m平面）纳米线侧壁。器件建模预测非极性取向应增强共振隧穿相比，极性结构和AlN双势垒将导致更高的峰谷电流比相比，AlGaN的障碍。电测量合奏的纳米线显示负微分电阻只出现在低温下。单个纳米线的测量结果显示，在室温下，峰值电流密度为5*10^5 A/cm^2时，纳米线的微分电阻为负。
英文摘要：
Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial geometry these devices take advantage of non-polar (m-plane) nanowire sidewalls. Device modeling predicts non-polar orientation should enhance resonant tunneling compared to a polar structure and that AlN double barriers will lead to higher peak-to-valley current ratios compared to AlGaN barriers. Electrical measurements of ensembles of nanowires show negative differential resistance appearing only at cryogenic temperature. Individual nanowire measurements show negative differential resistance at room temperature with peak current density of 5*10^5 A/cm^2.
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