通过观察InGaN量子阱器件中的光致发光闪烁观察晶格波
Observation of lattice waves through observation of the photoluminescence Blinking in InGaN Quantum Well devices
摘要：
作为InGaN的III-V族宽带隙半导体的光致发光的特征在于局部强度波动，称为“闪烁点”，尽管经过数十年的研究，但尚未完全理解。在这封信中，我们报告的实验数据和理论解释表明，它们是由量子阱晶格的热振动的干扰。通过远场光学测试，我们可以观察到这些干涉波的低频尾部，并研究它们传播到几十微米距离时的动力学。
英文摘要：
The photoluminescence of III-V wide band-gap semiconductors as InGaN is characterized by local intensity fluctuations, known as 'blinking points', that despite decades of research are not yet completely understood. In this letter we report experimental data and a theoretical interpretation that suggests they are caused by the interference of thermal vibrations of the Quantum Well lattice. With far-field optical tests we could observe the lower frequency tail of these interference waves and study their dynamics as they propagate up to distances of several tens of microns.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
