[0001] InGaN单量子阱光致发光中光学不稳定性与吸收物质的关系
The relation between optical instabilities and absorbed material in photoluminescence with [0001] InGaN single quantum well
摘要：
在这封信中，我们的目的是阐明在InGaN单量子阱（SQW）中观察到的所谓的光存储效应和闪烁现象的物理机制。我们发现，记忆效应和闪烁现象的光学响应都受到不同激发波长和晶体表面气体吸附量变化的影响。给出了一个再现样品表面吸附气体分子覆盖率动态变化的模型，并与实验数据进行了比较，结果吻合较好。
英文摘要：
In this letter, we aim to elucidate the physical mechanism of the so called optical memory effect and blinking phenomenon observed in InGaN single quantum wells (SQW). We have found that the optical response of both memory effect and blinking phenomenon, is affected by different excitation wavelengths and by the change of gas adsorption on the crystal surface. A model that reproduce dynamics of the coverage of absorbed gas molecules on the sample surface is given and compared with experimental data with evident match.
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