什么原因导致CdTe的高电阻率
What Causes High Resistivity in CdTe
摘要：
通过浅施主掺杂可以使CdTe半绝缘。这通常是为了在基于CdTe的辐射探测器中获得高电阻率。然而，人们普遍认为，CdTe的高电阻率是由于费米能级钉扎的原生深施主。基于浅施主对本征受主的补偿的模型基于以下假设而被排除：实际上不可能如此精确地控制浅施主掺杂水平，使得自由载流子密度可以被带到低于适合于辐射检测应用的期望值。在本文中，我们提出了我们的载流子统计和能量的浅施主和本征缺陷的碲化镉。我们的研究结果表明，浅施主可以用来可靠地获得高电阻率的碲化镉。由于辐射检测应用需要高电阻率和良好的载流子输运，因此通常应使用浅施主和浅受主进行载流子补偿，并避免作为有效载流子陷阱的深中心。
英文摘要：
CdTe can be made semi-insulating by shallow donor doping. This is routinely done to obtain high resistivity in CdTe-based radiation detectors. However, it is widely believed that the high resistivity in CdTe is due to the Fermi level pinning by native deep donors. The model based on shallow donor compensation of native acceptors was dismissed based on the assumption that it is practically impossible to control the shallow donor doping level so precisely that the free carrier density can be brought below the desired value suitable for radiation detection applications. In this paper, we present our calculations on carrier statistics and energetics of shallow donors and native defects in CdTe. Our results show that the shallow donor can be used to reliably obtain high resistivity in CdTe. Since radiation detection applications require both high resistivity and good carrier transport, one should generally use shallow donors and shallow acceptors for carrier compensation and avoid deep centers that are effective carrier traps.
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