单轴应力对高阻GaSe晶体介电常数低频色散的影响
Effect of uniaxial stress on low-frequency dispersion of dielectric constant in high-resistivity GaSe crystals
摘要：
本文研究了夹在两块绝缘平行平板之间的高阻GaSe层状晶体的低频介电谱。测量已在不同的单轴向应力高达$2.4\times10^5$ Pa施加沿c轴垂直于晶体层的平面。结果表明，具有绝缘板的高阻GaSe层状晶体的介电谱服从普适的幂律${\sim}ω^{n-1}$，其中$ω$是角频率，而$n\approx 0.8$是早期在具有铟焊接接触的高阻GaSe晶体上观察到的。在具有不同类型的接触（绝缘和欧姆）的晶体上的相同类型的光谱证实了由跳跃的载流子引起的所观察到的极化的体特征。结果表明，频率依赖的介电常数线性增加的单轴应力表征的系数$Δε/(εΔ{p})=8{\times}10^{-7}$帕$^{-1}$。观察到功率$1-n$随应力的轻微增加，这导致更强的介电色散。高电阻率GaSe晶体中低频介电常数的强应力依赖性可以被称为基本偶极子的形成的存在，其旋转对应于局部载流子的跳跃。
英文摘要：
Low-frequency dielectric spectra of high-resistivity GaSe layered crystals have been studied on the samples clamped between two insulating parallel plates at frequencies up to 100 kHz. The measurements have been carried out at different uniaxial stresses up to $2.4\times10^5$ Pa applied along the c-axis normal to crystal layer's plane. It is revealed that the dielectric spectra of high-resistivity GaSe layered crystals with insulating plates obey a universal power law ${\sim}ω^{n-1}$, where $ω$ is the angular frequency and $n\approx 0.8$, earlier observed on high-resistivity GaSe crystals with indium-soldered contacts. The same type of spectra on the crystals with different types of contacts (insulating and ohmic) confirms the bulk character of the observed polarization caused by hopping charge carriers. It is shown that the frequency-dependent dielectric constant increases linearly with the uniaxial stress characterized by the coefficient $Δε/(εΔ{p})=8{\times}10^{-7}$ Pa$^{-1}$. A slight increase of power $1-n$ with the stress is observed, that leads to a stronger dielectric dispersion. The strong stress dependence of the low-frequency dielectric constant in high-resistivity GaSe crystals may be referred to the presence of the formations of elementary dipoles, rotations of which correspond to hops of localized charge carriers.
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