Tunneling magnetoresistance (TMR) via oxides or molecules includes fruitful physics, such as spin filtering and hybridized interface states, in addition to various practical applications using large TMR ratio at room temperature. Then, a larger TMR effect with a new fundamental physics is awaited because further progress on spintronics can be realized. Here we report a discovery of a gigantic TMR ratio of 1,400,000% in a C60-Co nanocomposite spin device. The observed effect is induced by a combination of a Coulomb blockade effect and a novel magnetic switching effect. Theoretical investigation reveals that an electric field and a magnetic field control the magnetization and the electronic charging state, respectively, of the Co nanoparticles as in physics of multiferroicity.
The list of materials systems displaying both electric and magnetic long range order is short. Oxides, however, concentrate numerous examples of multiferroicity with, in some cases, a large magnetoelectric coupling. As a result, a fruitful research field has emerged contemporaneously with the consolidation of spintronic. The synergy between multiferroics and spintronics was meant to be inevitable and hence the characterization of spintronic functionalities in multiferroic materials is rather abundant. The aim of the present chapter is to review the oxide heterostructures where magnetoelectric …
We report on the spin-Hall magnetoresistance (SMR) and spin Seebeck effect (SSE) in multiferroic CoCr2O4 (CCO) spinel thin films with Pt contacts. We observe a large enhancement of both signals below the spin-spiral (Ts = 28 K) and the spin lock-in transitions (T_{lock_in} = 14 K). The SMR and SSE response in the spin lock-in phase are one order of magnitude larger than those observed at the ferrimagnetic transition temperature (Tc = 94 K), which indicates that the interaction between spins at the Pt|CCO interface is more efficient in the non-collinear magnetic state below Ts and T_{lock-in}. …
Large magnetoresistive materials are of immense interest for a number of spintronic applications by developing high density magnetic memory devices, magnetic sensors and magnetic switches. Colossal magnetoresistance, for which resistivity changes several order of magnitude (${\sim10^4 \%}$) in an external magnetic field, occurs mainly in phase separated oxide materials, namely manganites, due to the phase competition between the ferromagnetic metallic and the antiferromagnetic insulating regions. Can one further enhance the magnetoresistance by tuning the volume fraction of the two phases? In …
The spin-driven polarizations of type-I multiferroics are veiled by the preexisting ferroelectric (FE) polarization. Using first-principles calculations combined with a spin model, we uncover two hidden but huge spin-driven polarizations in the room-temperature multiferroic BiFeO3. One is associated with the global inversion symmetry broken by a FE distortion and the other is associated with the local inversion symmetry broken by an antiferrodistortive octahedra rotation. Comparison with recent neutron scatterings reveals that first polarization reaches 3.0 $μ$C/cm$^2$, which is larger than in…
We report dynamical magnetotransport in a ferromagnetic metallic oxide, La0.7Sr0.3MnO3 using the ac impedance technique. The temperature dependence of the ac resistance(R) and the inductive reactance (X) of the complex impedance (Z = R+jX) under different dc bias magnetic fields (Hdc = 0-1 kOe) were studied for different frequencies f = 0.1 to 5 MHz of alternating current. The zero field R, which decreases smoothly around the Curie temperature TC for f = 100 kHz, transforms into a peak for f = 0.5-5 MHz. The peak decreases in amplitude, broadens and shifts downward in temperature as the bias f…
First-principles density functional calculations show that the $\textrm{SrRuO}_{3}/\textrm{PbTiO}_{3}/\textrm{SrRuO}_{3}$ multiferroic junction with asymmetric (RuO$_{2}$/PbO and TiO$_{2}$/SrO) interfaces has a large ferroelectric depolarizing field, whose switching changes the interface transmission probabilities for tunneling electrons, leading to electroresistance modulation over several orders of magnitude. The switching further affects the interface spin density, naturally driving magnetoresistance as well as modulated spin-dependent in-plane resistivity, which may be exploited in field-e…
Single-phase multiferroic materials are usually considered useless because of the weak magnetoelectric effects, low operating temperature, and small electric polarization induced by magnetic orders. As a result, current studies on applications of the magnetoelectric effects are mainly focusing on multiferroic heterostructures and composites. Here we report a room-temperature giant effect in response to external magnetic fields in single-phase multiferroics. A low magnetic field of 1000 Oe applied on the spin-driven multiferroic hexaferrites BaSrCo2Fe11AlO22 and Ba0.9Sr1.1Co2Fe11AlO22 is able t…
Some single-crystalline materials present an electrical resistivity which decreases between room temperature and low temperatures at zero magnetic field as in a good metal and switches to a nearly semiconductinglike behavior at low temperatures with the application of a magnetic field. Often, this is accompanied by a huge and nonsaturating linear magnetoresistance which remains difficult to explain. Here we present a systematic study of the magnetoresistance in single-crystal $γ$-PtBi$_2$. We observe that the angle between the magnetic field and the crystalline $c$ axis fundamentally changes t…
Spin-dependent electronic transport through multiferroic Co/PbTiO$_{3}$/Co tunnel junctions is studied theoretically. Conductances calculated within the Landauer-Büttiker formalism yield both a large tunnel magnetoresistance (TMR) and a large tunnel electroresistance (TER). On top of this, we establish a four-conductance state. The conductances depend crucially on the details of the electronic structure at the interfaces. In particular, the spin polarization of the tunneling electronic states is affected by the hybridization of orbitals and the associated charge transfer at both interfaces. Di…
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two ferromagnets but also by the electric polarization of the ferroelectric interlayer, providing great opportunities for next-generation multi-state memory devices. Here we show that a La0.67Sr0.33MnO3 (LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevel resistance states in the presence of gradually reversed ferroelectric domains via tunneli…
We study the magnetoelectric and electrocaloric response of strain-engineered, multiferroic SrMnO$_3$, using a phenomenological Landau theory with all parameters obtained from \emph{first-principles}-based calculations. This allows to make realistic and materials-specific predictions about the magnitude of the corresponding effects. We find that in the vicinity of a tetracritical point, where magnetic and ferroelectric phase boundaries intersect, an electric field has a huge effect on the antiferromagnetic order, corresponding to a magnetoelectric response several orders of magnitude larger th…
Polar metals with ferroelectric-like displacements in metals have been achieved recently, half century later than Anderson and Blount's prediction. However, the genuine ferroelectricity with electrical dipolar switching has not yet been attained experimentally in the conducting materials, especially the ones possessing magnetic responses. Here we report the coexistence of ferroelectricity and magnetoresistance (MR) in the metallic PbNb0.12Ti0.88O3 (PNTO) thin films. We found that the conducting and magnetic responses of PNTO films are highly asymmetric. Negative MR up to 50% is observed under …
Multiferroics permit the magnetic control of the electric polarization and electric control of the magnetization. These static magnetoelectric (ME) effects are of enormous interest: The ability to read and write a magnetic state current-free by an electric voltage would provide a huge technological advantage. Dynamic or optical ME effects are equally interesting because they give rise to unidirectional light propagation as recently observed in low-temperature multiferroics. This phenomenon, if realized at room temperature, would allow the development of optical diodes which transmit unpolarize…
We present spin transport studies on a low-field, room-temperature magnetoelectric multiferroic polycrystalline $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}$ (SCFO)|Pt heterostructure wherein a highly tunable transverse conical magnetic phase is responsible for static and dynamic magnetoelectric coupling. We measured angular dependence of spin Hall magnetoresistance (SMR) at constant magnetic fields ($H$) in the range of 50 to 100 kOe. Application of field below the critical value (2.5 kOe), yielded negative SMR and the $H$-evolution of normalized SMR exhibited a negative gradient. F…
Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide four distinct resistive states in a single memory cell. Here we show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3 /La0.7Te0.3MnO3 (LSMO/PZT/LTMO) with p-type and n-type electrodes, the intrinsic rectification is observed and can be modified by the ferroelectric polarization of PZT. Owing to the combined TMR, TER and diode effects, two…
We show that extraordinary magnetoresistance (EMR) arises in systems consisting of two components; a semiconducting ring with a metallic inclusion embedded. The im- portant aspect of this discovery is that the system must have a quasi-two-dimensional character. Using the same materials and geometries for the samples as in experiments by Solin et al.[1;2], we show that such systems indeed exhibit a huge magnetoresistance. The magnetoresistance arises due to the switching of electrical current paths passing through the metallic inclusion. Diagrams illustrating the flow of the current density wit…
In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is being intensely pursued. Especially, how to control the switching current density, which is expected to enrich device functionalities, has aroused much interest among researchers all over the world. In this paper, a novel method to adjust the switching current is proposed, and the BiFeO3 (BFO) based heterostructures with opposite spontaneous polarizations f…
In recent years, bottom-up synthesis procedures have achieved significant advancements in atomically-controlled growth of several-nanometer-long graphene nanoribbons with armchair-shaped edges (AGNRs). This greatly encourages us to explore the potential of such well-defined AGNRs in electronics and spintronics. Here, we propose an AGNR based spin valve architecture that induces a large magnetoresistance up to 900%. We find that, when an AGNR is connected perpendicularly to zigzag-shaped edges, the AGNR allows for long-range extension of the otherwise localized edge state. The huge magnetoresis…
Magnetotransport investigation of a half-Heusler antiferromagnet DyPdBi revealed hallmark features of Weyl semimetal: huge negative longitudinal magnetoresistance and planar Hall effect. Both effects have recently been linked to chiral magnetic anomaly - axial charge pumping between Weyl nodes. Magnetoresistance (MR) of single crystals of DyPdBi is very pronounced. In magnetic field longitudinal to electrical current direction it reaches -80% and its relative difference with respect to that measured in transverse field (expressed as anisotropic magnetoresistance) is extremely strong: -60% at 1…
Most multiferroic materials with coexisting ferroelectric and magnetic order exhibit cycloidal antiferromagnetism with wavelength of several nanometers. The prototypical example is bismuth ferrite (BiFeO$_3$ or BFO), a room-temperature multiferroic considered for a number of technological applications. While most applications require small sizes such as nanoparticles, little is known about the state of these materials when their sizes are comparable to the cycloid wavelength. This work describes a microscopic theory of cycloidal magnetism in nanoparticles based on Hamiltonian calculations. It …
Multiferroics have found renewed interest in topological magnetism and for logic-in-memory applications. Among them, SrMnO$_{3}$, possessing strong magnetoelectric coupling is gaining attention for the design of coexisting magnetic and polar orders upon straining. Here we demonstrate antiferromagnetic exchange interactions in strained SMO thin films extracted from a new feature in the phase response of Spin Hall magnetoresistance, which has not been explored in earlier works, such as in magnetic insulators. We explain our findings with a model that incorporates magnetic anisotropy along [110] …
Lithium and Vanadium Intercalation into Bilayer V2Se2O: Ferrimagnetic-Ferroelastic Multiferroics and Anomalous and Spin Transport
Huazhong University of Science and Technology（华中科技大学）；Shandong Normal University（山东师范大学）；Chongqing University of Posts and Telecommunications（重庆邮电大学）；University of Wollongong（伍伦贡大学）；Florida State University（佛罗里达州立大学）；National High Magnetic Field Laboratory（国家强磁场实验室）
The recent study of oxides led to the discovery of several new fascinating physical phenomena. High-temperature superconductivity, colossal magnetoresistance, dilute magnetic doping, or multiferroicity were discovered and investigated in transition-metal oxides, representing a prototype class of strongly correlated electronic systems. This development was accompanied by an enormous progress regarding thin film fabrication. Within the past two decades, epitaxial thin films with crystalline quality approaching semiconductor standards became available using laser molecular beam epitaxy. This evol…
Magnetic phase transition tunnel magnetoresistance (MPT-TMR) effect with a single magnetic electrode has been investigated by first-principles calculations. The calculations show that the MPT-TMR of FeRh/MgO/Cu tunnel junction can be as high as hundreds of percent when the magnetic structure of FeRh changes from G-type antiferromagnetic (GAFM) to ferromagnetic order. This new type of MPT-TMR may be superior to the tunnel anisotropic magnetoresistance because of its huge magneto-resistance effect and similar structural simplicity. The main mechanism for the giant MPT-TMR can be attributed to th…
Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb
Huazhong University of Science and Technology（华中科技大学）；Florida State University（佛罗里达州立大学）；National High Magnetic Field Laboratory（国家强磁场实验室）；Charles University（查理大学）
Due to its two dimensional nature, ferromagnetism and charge doping can be induced by proximity and electric field effects in graphene. Taking advantage of these features, we propose an electrically engineered spin valve by combining two magnetic insulators (using EuO, EuS, or YIG) and three coating gates. Two top gates are used to cancel the heavy electron doping's in these magnets and one back gate is used to utilize the normal or half-metallic ferromagnetisms. We demonstrate that, when the second top gate is tuned to utilize the insulating or spin insulating states, huge giant magnetoresist…
We present electronic transport and magnetic properties of single crystals of semimetallic half-Heusler phase LuPdBi, having theoretically predicted band inversion requisite for nontrivial topological properties. The compound exhibits superconductivity below a critical temperature $T_{\rm c}=1.8\,$K, with a zero-temperature upper critical field $B_{\rm c2}\approx2.3\,$T. Although superconducting state is clearly reflected in the electrical resistivity and magnetic susceptibility data, no corresponding anomaly can be seen in the specific heat. Temperature dependence of the electrical resistivit…
Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low external field, has always been a useful functional feature in industrial technology and a core goal pursued by physicists and materials scientists. Conventional large MR materials are mainly manganites, whose colossal MR (CMR) can be as high as -90%. The dominant mechanism is attributed to spin configuration aligned by the external field, which reduces magnet…
The compound, Tb5Si3, crystallizing in Mn5Si3-type hexagonal structure, was recently reported by us to exhibit a sudden and huge enhancement in electrical resistivity (rho) at a critical magnetic field (H_cr) in the magnetically ordered state (<70 K) tracking isothermal magnetization (M) behavior. We have investigated the influence of external pressure (<15 kbar) and negative chemical pressure induced by Ge substitution for Si on M and rho as a function of temperature (5-300 K) and magnetic field (<120 kOe), with the primary aim of understanding the field-induced anomalies. Focussing on isothe…
The spatially inhomogeneity in a magnetic crystal give rise to electric polarization, which is known as inhomogeneous magnetoelectric effect. Similarly, an inhomogeneous magnetoelectronic effect in a conducting multiferroic material give rise to spatially inhomogeneous magnetic moment and spin distribution due to spatially inhomogeneity in the charge carrier concentration. In this study, we present experimental evidence of inhomogeneous magnetoelectronic effect in Py/p-Si layered structure. The Py/p-Si layered structure exhibit electronic multiferroicity due to superposition of flexoelectronic…
A substantial magnetodielectric effect is often an indication of coupled magnetic and elastic order, such as is found in the multiferroics. However, it has recently been shown that magnetism is not necessary to produce either a magnetoresistance or a magnetocapacitance when the material is inhomogeneous [M. M. Parish and P. B. Littlewood, Phys. Rev. Lett. 101, 166602 (2008)]. Here, we will investigate the characteristic magnetic-field-dependent dielectric response of such an inhomogeneous system using exact calculations and numerical simulations of conductor-dielectric composites. In particula…
The dielectric properties of Fe$_{3}$O$_{4}$ magnetic nanoparticles with an insulating coating layer of SiO$_{2}$ were investigated. At high temperatures, the changes of the dielectric constant and loss induced by the magnetic field are opposite in sign and strongly frequency-dependent, which originates from extrinsic magnetodielectric coupling-the Maxwell-Wagner effect combined with magnetoresistance. And the interface defects leads to the obvious hysteresis phenomena observed in the measurements. On the other hand, the strong coupling of dielectric and magnetic properties at low temperatures…
