拓扑超导体LuPdBi中的Shubnikov-de Haas振荡、弱反定域效应和大线性磁电阻
Shubnikov-de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi
摘要：
我们提出了半金属半Heusler相LuPdBi的单晶的电子输运和磁性，具有理论上预测的非平凡的拓扑性质所需的带反转。该化合物在低于临界温度$T_{\rm c}=1.8\,$ K时表现出超导性，具有零温度上临界场$B_{\rm c2}\approx2.3\,$ T。电阻率和磁化率数据虽然清楚地反映了超导状态，但比热却没有相应的异常。电阻率的温度依赖性表明存在两个平行的导电通道：金属和半导体，后者在低温下的贡献可以忽略不计。磁电阻是巨大的，清楚地表明在小磁场弱的反局域化效应。在约1.5T以上，磁阻变为线性，并且在高达9 T的磁场中不饱和。在室温下观察到线性磁电阻。在10 K以下，它伴随着Shubnikov-de Haas振荡。他们的分析揭示了有效质量为$0.06\,m_e$的电荷载流子和非常接近$π$的Berry相，这是Dirac费米子表面态的预期，从而证实了材料的拓扑性质。
英文摘要：
We present electronic transport and magnetic properties of single crystals of semimetallic half-Heusler phase LuPdBi, having theoretically predicted band inversion requisite for nontrivial topological properties. The compound exhibits superconductivity below a critical temperature $T_{\rm c}=1.8\,$K, with a zero-temperature upper critical field $B_{\rm c2}\approx2.3\,$T. Although superconducting state is clearly reflected in the electrical resistivity and magnetic susceptibility data, no corresponding anomaly can be seen in the specific heat. Temperature dependence of the electrical resistivity suggests existence of two parallel conduction channels: metallic and semiconducting, with the latter making negligible contribution at low temperatures. The magnetoresistance is huge and clearly shows a weak antilocalization effect in small magnetic fields. Above about 1.5 T, the magnetoresistance becomes linear and does not saturate in fields up to 9 T. The linear magnetoresistance is observed up to room temperature. Below 10 K, it is accompanied by Shubnikov-de Haas oscillations. Their analysis reveals charge carriers with effective mass of $0.06\,m_e$ and a Berry phase very close to $π$, expected for Dirac-fermion surface states, thus corroborating topological nature of the material.
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