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arXiv 1201.1600cond-mat.mes-hallquant-ph
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Coulomb Oscillations in Antidots in the Integer and Fractional Quantum Hall Regimes

A. Kou, C. M. Marcus, L. N. Pfeiffer, K. W. West

英文摘要:

We report measurements of resistance oscillations in micron-scale antidots in both the integer and fractional quantum Hall regimes. In the integer regime, we conclude that oscillations are of the Coulomb type from the scaling of magnetic field period with the number of edges bound to the antidot. Based on both gate-voltage and field periods, we find at filling factor ν = 2 a tunneling charge of e and two charged edges. Generalizing this picture to the fractional regime, we find (again, based on field and gate-voltage periods) at ν = 2/3 a tunneling charge of (2/3)e and a single charged edge.

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