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arXiv 0905.1338cond-mat.mes-hall
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反点Aharonov-Bohm干涉仪中的电子-电子相互作用

Electron-electron interactions in antidot-based Aharonov-Bohm interferometers

S. Ihnatsenka, I. V. Zozoulenko, G. Kirczenow

摘要:

我们提出了一个微观图片的量子反点在量子霍尔制度考虑电子相互作用。我们讨论了边态结构、能级演化、电荷量子化和线性响应电导随磁场或栅压的变化。特别注意的电导振荡由于Aharonov-Bohm干扰和他们意想不到的周期性。为了解释后者,我们提出了散射的点缺陷和库仑阻塞隧穿的机制。它们得到了Hartree近似下自洽计算的支持,表明在费米能级处的单粒子态的钉扎和相关性以及当反点束缚态减少时的电荷振荡。我们还发现了有趣的反共振反射的Fano型的现象。

英文摘要:

We present a microscopic picture of quantum transport in quantum antidots in the quantum Hall regime taking electron interactions into account. We discuss the edge state structure, energy level evolution, charge quantization and linear-response conductance as the magnetic field or gate voltage is varied. Particular attention is given to the conductance oscillations due to Aharonov-Bohm interference and their unexpected periodicity. To explain the latter we propose the mechanisms of scattering by point defects and Coulomb blockade tunneling. They are supported by self-consistent calculations in the Hartree approximation, which indicate pinning and correlation of the single-particle states at the Fermi energy as well as charge oscillation when antidot-bound states depopulate. We have also found interesting phenomena of anti-resonance reflection of the Fano type.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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