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arXiv 1111.6284cond-mat.mtrl-scicond-mat.other
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Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

Gopal K. Pradhan, Achintya Bera, Pradeep Kumar, D. V. S. Muthu, A. K. Sood

英文摘要:

We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral (α-Bi2Te3) to monoclinic (β-Bi2Te3) structural transition at ~ 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm-1 which is dispersionless with pressure. The structural transition at ~ 8 GPa is marked by a change in pressure derivative of A1g and Eg mode frequencies as well as by appearance of new modes near 115 cm-1and 135 cm-1. The mode Grüneisen parameters are determined in both the α and β-phases.

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