We study the introduction of a third material, namely Zr, within a nanometric periodic Mg/Co structure designed to work as optical component in the extreme UV (EUV) spectral range. Mg/Co, Mg/Zr/Co, Mg/Co/Zr and Mg/Zr/Co/Zr multilayers are designed, then characterized in terms of structural quality and optical performances through X-ray and EUV reflectometry measurements respectively. For the Mg/Co/Zr structure, the reflectance value is equal to 50% at 25.1 nm and 45deg of grazing incidence and reaches 51.3% upon annealing at 200deg C. Measured EUV reflectivity values of tri-layered systems are discussed in terms of material order within a period and compared to the predictions of the theoretical model of Larruquert. Possible applications are pointed out.
Tuning the secondary electron yield and electronic conductivity of MgZnO multilayers synthesized by Atomic layer deposition
IRFU, CEA Université Paris-Saclay（CEA巴黎萨克雷大学IRFU）；DPHY, ONERA（ONERA DPHY）；LECA, CEA Université Paris-Saclay（CEA巴黎萨克雷大学LECA）；INSP, CNRS Université Paris Sorbonne（CNRS巴黎索邦大学INSP）
Thermal Characterization of Buried Interfaces in Multilayer Heterostructures via TDTR with Periodic Waveform Analysis
School of Energy and Power Engineering, Huazhong University of Science and Technology（华中科技大学能源与动力工程学院）；School of Mechanics and Engineering Science, Peking University（北京大学力学与工程科学学院）
Roughness-induced domain structure in perpendicular Co/Ni multilayers
我们研究了在不同厚度的Cu种子层上生长的Co/Ni薄膜的粗糙度、剩磁和矫顽力之间的相关性。增加Ta/Cu/8 x [Co/Ni]薄膜的Cu种子层厚度会增加薄膜的粗糙度。面内磁化循环表明，剩磁和矫顽力都随着种子层粗糙度的增加而增加。极化克尔显微镜和磁力显微镜显示，畴密度也增加与粗糙度。对具有周期性调制表面的结构进行的有限元微磁模拟提供了进一步的见解。他们证实了畴密度和粗糙度之间的联系，并确定了畴壁的微观结构作为粗糙薄膜中剩磁增加的来源。模拟预测，畴壁的字符变化从布洛赫类在光滑的薄膜Néel类粗糙的薄膜。
X-ray standing wave and reflectometric characterization of multilayer structures
用X射线驻波对合成周期多层膜的微结构进行了表征。结果表明，用X射线反射法（XRR）和X射线驻波法（XSW）相结合的方法对多层膜进行分析，可以克服各自技术在微结构分析中的不足。虽然界面粗糙度是更准确地确定了XRR技术，层组成是更准确地确定了XSW技术，其中一个元素是直接确定其特征发射。这些方面已经用20周期Pt/C多层膜的示例进行了解释。由于Pt溶解在C层中，Pt $_{x}$ C $_{1-x}$的C层的组成已通过XSW技术确定。在XSW分析中，当假定存在于C层中的Pt的总量在加宽的界面内时，其导致较大的界面粗糙度值，这与通过XRR技术确定的那些不一致。将界面粗糙度值限制为通过XRR技术确定的那些，需要在C层中溶解额外量的Pt以解释由驻波场激发的Pt荧光产率。该分析提供了C层的平均组成Pt $_{x}$ C $_{1-x}$。
