调谐原子层沉积合成MgZnO多层膜的二次电子产额和电子导电性
Tuning the secondary electron yield and electronic conductivity of MgZnO multilayers synthesized by Atomic layer deposition
浏览论文内容
中文总结 AI 辅助
本研究通过原子层沉积制备MgZnO多层膜，同时调控二次电子发射和电导率，实现单相材料无法达到的TEEY与导电性组合，为真空电子功能表面设计提供新途径。
中文摘要 AI 辅助
二次电子发射（SEE）源于高能电子与材料表面的相互作用，可在真空射频（RF）系统中引发有害效应，尤其是电子倍增效应（multipacting），从而降低系统性能并威胁器件完整性。尽管已有大量研究，但有效且广泛采用的缓解策略仍然有限。本文报道了一种通过原子层沉积（ALD）制备纳米级多元素多层膜，同时调控SEE和电导率的方法。我们展示了这些异质结构的设计与制备，并系统表征了一系列薄膜，以建立发射特性、电导率、化学与结构特征之间的关联。我们证明，此类异质结构能够实现单相材料无法达到的总电子发射产额（TEEY）与电导率的组合，包括高TEEY与相对高电导率相结合，以及低TEEY与低电导率相结合的状态。这些结果为真空电子应用中功能表面的合理设计开辟了新途径。
英文摘要
Secondary electron emission (SEE), arising from the interaction of energetic electrons with material surfaces, can induce deleterious effects in vacuum radio-frequency (RF) systems, notably multipacting, thereby degrading performance and threatening device integrity. Despite extensive efforts, effective and widely adopted mitigation strategies remain limited. Here, we report an approach to simultaneously tailor SEE and electrical conductivity using nanometric multi-element multilayers deposited by atomic layer deposition (ALD). The design and fabrication of these heterostructures are presented, and a range of films is systematically characterized to establish correlations between emission properties, electrical conductivity, chemical and structural features. We demonstrate that such heterostructures enable combinations of total electron emission yield (TEEY) and conductivity unattainable in single-phase materials, including regimes combining high TEEY with relatively high conductivity and low TEEY with low conductivities. These results open new avenues for the rational design of functional surfaces for vacuum electronic applications.
发表机构
- IRFU, CEA Université Paris-Saclay（CEA巴黎萨克雷大学IRFU）
- DPHY, ONERA（ONERA DPHY）
- LECA, CEA Université Paris-Saclay（CEA巴黎萨克雷大学LECA）
- INSP, CNRS Université Paris Sorbonne（CNRS巴黎索邦大学INSP）
机构由 AI 辅助整理，请以论文原文为准。
