双异质结中质量依赖于位置的粒子的散射态
Scattering states of a particle, with position-dependent mass, in a double heterojunction
摘要：
在这项工作中，我们得到了精确的分析散射解决方案的粒子（电子或空穴）在半导体双异质结-势阱/势垒-其中的有效质量的粒子随位置的异质结内。据观察，质量的空间依赖性内的井/障碍介绍了一个非线性分量的平面波解决方案的连续状态。此外，发现透射系数随着能量的增加而增加，最终接近1，而反射系数遵循相反的趋势并趋于零。
英文摘要：
In this work we obtain the exact analytical scattering solutions of a particle (electron or hole) in a semiconductor double heterojunction - potential well / barrier - where the effective mass of the particle varies with position inside the heterojunctions. It is observed that the spatial dependence of mass within the well / barrier introduces a nonlinear component in the plane wave solutions of the continuum states. Additionally, the transmission coefficient is found to increase with increasing energy, finally approaching unity, whereas the reflection coefficient follows the reverse trend and goes to zero.
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