We investigate in this paper properties of the spin resistivity in the magnetic semiconducting MnTe of NiAs structure. MnTe is a crossroad semiconductor with a large band gap. It is an antiferromagnet with the Néel temperature around 310K. Due to this high Néel temperature, there are many applications using its magnetic properties. The method we use here is the Monte Carlo simulation in which we take into account the interaction between itinerant spins and lattice Mn spins. Our results show a very good agreement with experiments on the shape of the spin resistivity near the Néel temperature.
Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies. The easy axes of the magnetic moments within the hexagonal basal plane are determined to be along $\left<1\bar100\right>$ directions. The spin-flop transition and concomitant repopulation of domains in strong magnetic fields is observed…
We study in this paper the parallel spin current in an antiferromagnetic semiconductor thin film where we take into account the interaction between itinerant spins and lattice spins. The spin model is an anisotropic Heisenberg model. We use here the Boltzmann's equation with numerical data on cluster distribution obtained by Monte Carlo simulations and cluster-construction algorithms. We study the cases of degenerate and non-degenerate semiconductors. The spin resistivity in both cases is shown to depend on the temperature with a broad maximum at the transition temperature of the lattice spin …
Loss of altermagnetic order and smooth restoration of Kramers' spin degeneracy with increasing temperature in CrSb and MnTe
H.H. Wills Physics Laboratory, University of Bristol（布里斯托大学 H.H. 威尔斯物理实验室）；Department of Physics, University of Warwick（华威大学物理系）；Institute for Theoretical Physics, Johannes Keppler University Linz（林茨约翰内斯·开普勒大学理论物理研究所）；Donostia International Physics Center（圣塞巴斯蒂安国际物理中心）；Max-Planck-Institut für Mikrostrukturphysik（马克斯·普朗克微结构物理研究所）
We report anomalous physical properties of single-crystalline FeSi over a wide temperature range 1.8-400 K. X-ray diffraction, specific heat, and magnetization measurements indicate that the FeSi crystals synthesized in this study are of high quality with a very low concentration of magnetic impurities ($\sim$0.01$\%$). The electrical resistivity $ρ$($T$) can be described by activated behavior with an energy gap $Δ$ = 57 meV between 67 K and 150 K. At temperatures below 67 K, $ρ$($T$) is significantly lower than an extrapolation of the activated behavior, and the Hall coefficient and magneto-r…
Temperature dependent measurements of the resistivity on RuIn$_3$ single crystals show a semiconducting behaviour, in contrast to previously published results. In the high temperature range the semiconducting gap was measured to be $0.4-0.5$eV. We observe an anisotropy of the resistivity along [110] and [001] orientations of the tetragonal single crystals. At low temperatures two activation energies of impurities were estimated to 1meV and 10meV. The temperature dependence of the specific heat and the band structure calculations provide also a semiconducting behaviour of RuIn$_3$.
A series of 100 nm LaVO3 thin films have been synthesized on (001)-oriented SrTiO3 substrates using the pulsed laser deposition technique, and the effects of growth temperature are analyzed. Transport properties reveal a large electronic mobility and a non-linear Hall effect at low temperature. In addition, a cross-over from a semiconducting state at high-temperature to a metallic state at low-temperature is observed, with a clear enhancement of the metallic character as the growth temperature increases. Optical absorption measurements combined with the two-bands analysis of the Hall effect sh…
Spin gapless semiconductors exhibit a finite band gap for one spin channel and closed gap for other spin channel, emerged as a new state of magnetic materials with a great potential for spintronic applications. The first experimental evidence for the spin gapless semiconducting behavior was observed in an inverse Heusler compound Mn2CoAl. Here, we report a detailed investigation of the crystal structure and anomalous Hall effect in the Mn2CoAl using experimental and theoretical studies. The analysis of the high-resolution synchrotron x-ray diffraction data shows anti-site disorder between Mn a…
ABSTRACT: Narrow-gap semiconductors are sought-after materials due to their potential for long-wavelength detectors, thermoelectrics, and more recently non-trivial topology. Here we report the synthesis and characterization of a new family of narrow-gap semiconductors, $R$$_{3}$Cd$_{2}$As$_{6}$ ($R=$ La, Ce). Single crystal x-ray diffraction at room temperature reveals that the As square nets distort and Cd vacancies order in a monoclinic superstructure. A putative charge-density ordered state sets in at 279~K in La$_{3}$Cd$_{2}$As$_{6}$ and at 136~K in Ce$_{3}$Cd$_{2}$As$_{6}$ and is accompan…
In the resistive phase transition in VO2, temperature excursions from points on the major hysteresis loop produce minor loops. We have found that for sufficiently small excursions these minor loops degenerate into single-valued, non-hysteretic branches (NHBs) having essentially the same or even higher temperature coefficient of resistance (TCR) as the semiconducting phase at room temperature. We explain this behavior and discuss the opportunities it presents for infrared imaging technology based on resistive microbolometers. It is possible to choose a NHB with 100 to 1000 times smaller resisti…
We investigated transport properties of organic heterointerfaces formed by single-crystals of two organic donor-acceptor molecules, tetramethyltetraselenafulvalene (TMTSF) and 7,7,8,8-tetracyanoquinodimethane (TCNQ). Whereas the individual crystals have un-measurably high resistance, the interface exhibits a resistivity of few tens of MegaOhm with a temperature dependence characteristic of a small gap semiconductor. We analyze the transport properties based on a simple band-diagram that naturally accounts for our observations in terms of charge transfer between two crystals. Together with the …
We report the structural, magnetic and transport properties of polycrystalline CrVTiAl alloy along with first principles calculations. It crystallizes in the LiMgPdSn type structure with lattice parameter 6.14 Å at room temperature. Absence of (111) peak along with the presence of a weak (200) peak indicates the antisite disorder of Al with Cr and V atoms. The magnetization measurements reveal a ferrimagnetic transition near 710 K and a coercive field of 100 Oe at 3 K. Very low moment and coercive field indicate fully compensated ferrimagnetism in the alloy. Temperature coefficient of resistiv…
We have studied the resistivity of a large number of highly oriented graphite samples with areas ranging from several mm$^2$ to a few $μ$m$^2$ and thickness from $\sim 10 $nm to several tens of micrometers. The measured resistance can be explained by the parallel contribution of semiconducting graphene layers with low carrier density $< 10^9$ cm$^{-2}$ and the one from metallic-like internal interfaces. The results indicate that ideal graphite with Bernal stacking structure is a narrow-gap semiconductor with an energy gap $E_g \sim 40 $meV.
Single crystals of $R$Cd$_{0.67}$As$_2$ ($R$ = La and Ce) have been synthesized by high temperature ternary melt and their physical properties have been explored by means of magnetization, specific heat, electrical resistivity, Hall coefficient, and thermoelectric power measurements. $R$Cd$_{0.67}$As$_2$ compounds indicate a (structural) phase transition at high temperatures, accompanied by a remarkable increase of the electrical resistivity with an extremely low carrier concentration. CeCd$_{0.67}$As$_2$ exhibits a large magnetic anisotropy and an antiferromagnetic (AFM) order below $T_{N} = …
Single-phase films of the full Heusler compound Fe2TiSi have been prepared by magnetron sputtering. The compound is found to be a semiconductor with a gap of 0.4eV. The electrical resistivity has a logarithmic temperature dependence up to room temperature due to Kondo scattering of a dilute free electron gas off superparamagnetic impurities. The origin of the electron gas is extrinsic due to disorder or off-stoichiometry. Density functional theory calculations of the electronic structure are in excellent agreement with electron energy loss, optical, and x-ray absorption experiments. Fe2TiSi ma…
Low temperature (<400 K) thermoelectric properties of semiconducting RuIn3 and metallic IrIn3 are reported. RuIn3 is a narrow band gap semiconductor with a large n-type Seebeck coefficient at room temperature (S(290K)~400 μV/K), but the thermoelectric Figure of merit (ZT(290K) = 0.007) is small because of high electrical resistivity and thermal conductivity (κ(290 K) ~ 2.0 W/m K). IrIn3 is a metal with low thermopower at room temperature (S(290K)~20 μV/K) . Iridium substitution on the ruthenium site has a dramatic effect on transport properties, which leads to a large improvement in the power …
Structural and thermoelectric properties of metallic and semiconducting Sb2Te3 are reported. X-Ray diffraction and Raman spectroscopy studies reveal that semiconducting sample have higher defect density. Nature and origin of possible defects are highlighted. Semiconducting Sb2Te3 hosts larger numbers of defects, which act as scattering center and give rise to the increased value of resistivity, thermopower and power factor. Thermopower data indicates p-type nature of the synthesized samples. It is evidenced that the surface states are often mixed with the bulk state, giving rise to metallicity…
RuGe, a diamagnetic small-band gap semiconductor, and CoGe, a nonmagnetic semimetal, are both isostructural to the Kondo insulator FeSi and the skyrmion lattice host MnSi. Here, we have explored the magnetic and transport properties of Co-doped RuGe: Ru$_{1-x}$Co$_x$Ge. For small values of $x$, a magnetic ground state emerges with $T_{c}\approx$ 5 $-$ 9 K, which is accompanied by a moderate decrease in electrical resistivity and a Seebeck coefficient that indicates electron-like charge carriers. The magnetization, magnetoresistance, and the specific heat capacity all resemble that of Fe$_{1-x}…
Optical, vibrational, and electronic properties of semiconducting YbN
Robinson Research Institute, Victoria University of Wellington（罗宾逊研究所，惠灵顿维多利亚大学）；The MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington（麦克迪亚米德先进材料与纳米技术研究所，惠灵顿维多利亚大学）
High quality half-Heusler single crystals of LuPtSb have been synthesized by a Pb flux method. The temperature dependent resistivity and Hall effects indicate that the LuPtSb crystal is a p-type gapless semiconductor showing a transition from semiconducting to metallic conducting at 150 K. Moreover, a weakly temperature-dependent positive magnetoresistance (MR) as large as 109 % and high carrier mobility up to 2950 cm2/Vs are experimentally observed at temperatures below 150 K. The low-field MR data shows evidence for weak antilocalization (WAL) effect at temperatures even up to 150 K. Analysi…
A brief survey of experimental and theoretical studies of half-metallic ferromagnets (HMFs) and spin gapless semiconductors is given, the possible candidates being the X$_2$YZ (X = Mn, Fe, Co; Y = Ti, V, Cr, Mn, Fe, Co, Ni; Z = Al, Si, Ga, Ge, In, Sn, Sb) Heusler alloys. The data on the electrical resistivity, normal and anomalous Hall Effect, and magnetic properties are presented. It is shown that the Co$_2$FeZ alloys demonstrate properties of conventional ferromagnets, the HMF properties being also manifested at the variation of the Z-component. The Fe$_2$YAl and Mn$_2$YAl alloys show at the…
Temperature dependent electrical resistivity, crystal structure and heat capacity measurements reveal a resistivity drop and metal to semiconductor transition corresponding to first order structural phase transition near 400 K in Ca3Co4O9. The lattice parameter c varies smoothly with increasing temperature, while anomalies in the a, b1 and b2 lattice parameters occur at ~ 400 K. Both Ca2CoO3 and CoO2 layers become distorted above ~ 400 K associated with the metal to semiconductor transport behavior change. Resistivity and heat capacity measurements as a function of temperature under magnetic f…
We report successful growth of magnetic topological insulator (MTI) MnBi2Te4. The heating schedule basically deals with growth of the crystal from melt at 900C and very slow cooling (1C/hr) to around 600C with 24 hours hold time, followed by cooling to room temperature. Our detailed, PXRD Reitveld analysis showed that the resultant crystal is dominated mainly by MnBi2Te4 and minor phases of Bi2Te3 and MnTe. The transport measurements showed a step like behavior at around 150K followed by cusp like structure in resistivity at around 25K (TP) due reported anti-ferromagnetic ordering of Mn. Both …
In the present investigation resistivity Vs temperature measurements have been performed for solgel prepared pure and Ni doped CdO (NDO) thin films. The semiconducting behavior i.e. negative temperature coefficient of resistivity (TCR) of pure CdO thin film through-out the whole temperature range can be attributed mainly due to concentration dependent thermally activation mechanism of the carriers. The semiconductor to metal transition (SMT) for NDO thin films has been elucidated via combined effect of involved grain boundaries, ionic impurities, phonon scattering and carrier activation.
Bulk single crystal Molybdenum diselenide has been studied for its electronic and thermal transport properties. We perform resistivity measurements with current in-plane (CIP) and current perpendicular to plane (CPP) as a function of temperature. The CIP measurements exhibit metal to semiconductor transition at $\simeq 31$ K. In the semiconducting phase ($T > 31$ K), the transport is best explained by variable range hopping (VRH) model. Large magnitude of resistivity in CPP mode indicates strong structural anisotropy. Seebeck coefficient as a function of temperature measured in the range $90 -…
Effects of the Co substitution have been observed on the structural, magnetic and magneto-transport properties of Fe2-xCoxMnSi alloy. Curie temperature (TC) and saturation magnetization (MS) of these alloys increased linearly with the Co substitution. Competitive magnetic interaction between ferromagnetic (FM) and anti-ferromagnetic (AFM) phases exists in Fe2-xCoxMnSi for x less than 0.2, AFM phase is completely disappears for x greater than or equal to 0.2. The value of Rhodes-Wohlfarth ratio pc/ps is greater than one for these alloys which is the characteristics of iterant magnetism present …
The pentatellurides, ZrTe5 and HfTe5 are layered compounds with one dimensional transition-metal chains that show a never understood temperature dependent transition in transport properties as well as recently discovered properties suggesting topological semimetallic behavior. Here we show that these materials are semiconductors and that the electronic transition is due to a combination of bipolar effects and different anisotropies for electrons and holes. We report magneto-transport properties for two kinds of ZrTe5 single crystals grown with the chemical vapor transport (S1) and the flux met…
KMgBi single crystals are grown by using the Bi flux successfully. KMgBi shows semiconducting behavior with a metal-semiconductor transition at high temperature region and a resistivity plateau at low temperature region, suggesting KMgBi could be a topological insulator with a very small band gap. Moreover, KMgBi exhibits multiband feature with strong temperature dependence of carrier concentrations and mobilities.
In this work, we present the investigation of temperature dependent hall measurement of the ultra thin VO$_2$ films grown on Si/SiO$_2$ substrate. Experimental results suggest that electrons are the predominant carrier both in the semiconducting and metallic phases. The decrease of the resistivity with increasing temperature is mainly caused by the increase in the number density of charge carriers. The temperature dependence of the carrier concentration indicates the VO$_2$ films has a band gap of 0.40$\pm$0.09 $ev$ in the semiconducting phase. Analysis of hall effect data based on a composite…
Electrical resistivity measurements as a function of temperature between 1 K and 300 K were performed at various pressures up to 3 GPa on the superconducting layered compounds Ln(O0.5F0.5)BiS2 (Ln = La, Ce). At atmospheric pressure, La(O0.5F0.5)BiS2 and Ce(O0.5F0.5)BiS2 have superconducting critical temperatures, Tc, of 3.3 K and 2.3 K, respectively. For both compounds, the superconducting critical temperature Tc initially increases, reaches a maximum value of 10.1 K for La(O0.5F0.5)BiS2 and 6.7 K for CeO(0.5F0.5)BiS2, and then gradually decreases with increasing pressure. Both samples also ex…
We report the theoretical prediction of a new class of spintronic materials, namely bipolar magnetic semiconductor (BMS), which is also supported by our experimental data. BMS acquires a unique band structure with unequal band gaps for spin up and down channels, and thus are useful for tunable spin transport based applications such as spin filters. The valence band (VB) and conduction band (CB) in BMS approach the Fermi level through opposite spin channels, and hence facilitate to achieve reversible spin polarization which are controllable via applied gate voltage. We report the quaternary Heu…
Chromium substituted cobalt ferrite with grain size less than the single domain (approx. 70 nm) has been prepared by the sol-gel method. XRD analysis reveals that the samples crystallize to cubic symmetry with spacegroup number 227. Two transition temperatures (TD (approx. 450 K) and TM (approx. 600 K) have been observed from the impedance verses temperature measurement. TD increases with the increase in frequency due to dipole response to the frequency. TM is comparable with the para-ferrimagnetic transition temperature of cobalt ferrite, which is independent of frequency. This result is well…
We investigate the electronic band structure of two of the rare-earth nitrides, DyN and SmN. Resistivity measurements imply that both materials have a semiconducting ground state, and both show resistivity anomalies coinciding with the magnetic transition, despite the different magnetic states in DyN and SmN. X-ray absorption and emission measurements are in excellent agreement with LSDA+U calculations, although for SmN the calculations predict a zero band gap.
Topological materials with extremely large magnetoresistance exhibit a prognostic feature of resistivity turn-on behaviour. This occurs when the temperature dependence of resistivity changes from metallic to semiconducting characteristics on application of external magnetic field above a threshold value. Here, we study the magneto-transport properties of type-II Weyl Semimetal WP2. We find that semi-classical theories of magnetoresistance are consistent with our data without the need to invoke topological surface states. Our findings in this work provides an alternative basis to understand the…
Spin gapless semiconductors are interesting novel class of materials by embracing both magnetism and semiconducting. Its potential application in future spintronics requires realization in thin film form. In this letter, we report a successful growth of spin gapless Mn2CoAl films on thermally oxidized Si substrates by magnetron sputtering deposition. The films deposited at 673K are well oriented to (001) direction and display a uniform-crystalline surface. Magnetotransport measurements on the oriented films reveal a semiconducting-like resistivity, small anomalous Hall conductivity and linear …
Structural, thermal, resistive and magnetic properties of melt quenched Bi 0.88 Sb 0.12 alloys are reported. The samples are heated at three different temperatures, followed by rapid quenching in liquid nitrogen. Large temperature difference between liquidus and solidus lines, led to microscopic in-homogeneity in the alloy. The effect of quenching from different temperatures in polycrystalline Bi 0.88 Sb 0.12 alloy has been studied. The parameters such as strain, unit cell volume, and resistivity are found to increase with temperature. Thermal variation of resistivity depicts non monotonic tem…
The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in Zn1-xMnxO type system. Zn1-xMnxO (x = 0.02, 0.04) samples have been synthesized by solid-state reaction method and have been irradiated with 50 MeV Li3+ ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. XRD result shows single phase wurtzite structure for Zn0.98Mn0.02O, whereas for Zn0.96Mn0.04O sample an impurity phase has been f…
A combination of synchrotron X-ray, neutron powder diffraction, magnetization, heat capacity and electrical resistivity measurements reveals that NdMnAsO is an antiferromagnetic semiconductor with large Neel temperature (TN = 359(2) K). At room temperature the magnetic propagation vector k = 0 and the Mn moments are directed along the crystallographic c-axis (mMn = 2.41(6) BM). Upon cooling a spin reorientation (SR) transition of the Mn moments into the ab-plane occurs (TSR = 23 K). This coincides with the long range ordering of the Nd moments, which are restricted to the basal plane. The magn…
We report measurements and calculations on the properties of the intermetallic compound Be$_5$Pt. High-quality polycrystalline samples show a nearly constant temperature dependence of the electrical resistivity over a wide temperature range. On the other hand, relativistic electronic structure calculations indicate the existence of a narrow pseudogap in the density of states arising from accidental approximate Dirac cones extremely close to the Fermi level. A small true gap of order 3 meV is present at the Fermi level, yet the measured resistivity is nearly constant from low to room temperatur…
We report the electrical resistivity, thermoelectric power, and thermal conductivity of single-crystalline and sintered samples of the 5d pyrochlore oxide CsW2O6. The electrical resistivity of the single crystal is 3 mohm cm at 295 K and gradually increases with decreasing temperature above 215 K (Phase I). The thermoelectric power of the single-crystalline and sintered samples shows a constant value of approximately -60 uV K-1 in Phase I. These results reflect that the electron conduction by W 5d electrons in Phase I is incoherent and in the hopping regime, although a band gap does not open a…
Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the free carrier activation mechanisms form a continuum in a large temperature scale (300 K - 858 K) and the metastable amorphous phase can be treated as a super-cooled liquid. The effective activation energy calculated using the resistivity versus temperature data follow a parabolic behavior, with a room temperature value of 333 meV, peaking to ~377 meV at ~465 …
Resistivity under magnetic field, thermopower and Hall coefficient are systematically studied for [Bi$_2$Ba$_{1.3}$K$_{0.6}$Co$_{0.1}$]$^{RS}$[CoO$_2$]$_{1.97}$ single crystal. In-plane resistivity ($ρ_{ab}$(T)) shows metallic behavior down to 2 K with a $T^2$ dependence below 30 K; while out-of-plane resistivity ($ρ_{c}(T)$) shows metallic behavior at high temperature and a thermal activation semiconducting behavior below about 12 K. Striking feature is that magnetic field induces a ln(1/$T$) diverging behavior in both $ρ_{ab}$ and $ρ_{c}(T)$ at low temperature. The positive magnetoresistance…
Polycrystalline Yb substituted NiZn nanoferrites with the compositions of Ni0.5Zn0.5YbxFe2-xO4 (x= 0.00, 0.04, 0.08, 0.12, 0.16 and 0.20) have been synthesized using sol gel auto combustion technique. Single phase cubic spinel structure has been confirmed by the X ray diffraction (XRD) patterns. Larger lattice constants of the compositions are found with increasing Yb3+ concentration while the average grain size (52 to 18 nm) has noticeable decrease as Yb3+ content is increased. The presence of all existing elements as well as the purity of the samples has also been confirmed from energy dispe…
In this report, we present structural, electronic, magnetic and transport properties of Co-rich spin gapless semiconductor CoFeCrGa using both theoretical and experimental techniques. The key advantage of Co-rich samples $\mathrm{Co_{1+x}Fe_{1-x}CrGa}$ is the high Curie temperature (T$\mathrm{_C}$) and magnetization, without compromising the SGS nature (up to x = 0.4), and hence our choice. The quaternary Heusler alloys $\mathrm{Co_{1+x}Fe_{1-x}CrGa}$ (x = 0.1 to 0.5) are found to crystallize in LiMgPdSn-type structure having space group $F\bar{4}3m$ (\# 216). The measured Curie temperature in…
EuC$_2$ is a ferromagnet with a Curie-temperature of $T_C \simeq 15\,$K. It is semiconducting with the particularity that the resistivity drops by about 5 orders of magnitude on cooling through $T_C$, which is therefore called a metal-insulator transition. In this paper we study the magnetization, specific heat, thermal expansion, and the resistivity around this ferromagnetic transition on high-quality EuC$_2$ samples. At $T_C$ we observe well defined anomalies in the specific heat $c_p(T)$ and thermal expansion $α(T)$ data. The magnetic contributions of $c_p(T)$ and $α(T)$ can satisfactorily …
Chemically _ driven isothermal close space vapour transport was used to prepare pure MoO2 films which were eventually converted to MoO3 by annealing in air. According to temperature_dependent Raman measurements, the MoO2/MoO3 phase transformation was found to occur in the 225 _ 350 oC range; no other phases were detected during the transition. A clear change in composition and Raman spectra, as well as noticeable modifications of the band gap and the absorption coefficient confirmed the conversion from MoO2 to MoO3. An extensive characterization of films of both pure phases was carried out. In…
A filled skutterudite, La$_{0.5}$Rh$_4$Sb$_{12}$, with a lattice constant of 9.284(2) Å was synthesized using a high-pressure technique. The electrical resistivity showed semiconducting behavior and the energy gap was estimated to be more than 0.08 eV. Magnetic susceptibility measurements indicated temperature-independent diamagnetism, which originates from Larmor diamagnetism. The electrical properties of this compound are more similar to those of the La$_{0.5}$Rh$_4$As$_{12}$ semiconductor with an energy gap of 0.03 eV than to those of the La$_{0.6}$Rh$_4$P$_{12}$ superconductor.
Bi$_2$O$_2$Se is a promising material for next-generation semiconducting electronics. It exhibits premature metallicity on the introduction of a tiny amount of electrons, the physics behind which remains elusive. Here we report on transport and dielectric measurements in Bi$_2$O$_2$Se single crystals at various carrier densities. The temperature-dependent resistivity ($ρ$) indicates a smooth evolution from the semiconducting to the metallic state. The critical concentration for the metal-insulator transition (MIT) to occur is extraordinarily low ($n_\textrm{c}\sim10^{16}$ cm$^{-3}$). The relat…
Replacing U for Ca in semiconducting CaB$_6$ at the few at.% level induces metallic behaviour and Kondo-type phenomena at low temperatures, a rather unusual feature for U impurities in metallic hosts. For Ca$_{0.992}$U$_{0.008}$B$_6$, the resistance minimum occurs at $T$ = 17 K. The subsequent characteristic logarithmic increase of the resistivity with decreasing temperature merges into the expected $T^2$ dependence below 0.8 K. Data of the low-temperature specific heat and the magnetization are analyzed by employing a simple resonance-level model. Analogous measurements on LaB$_6$ with a smal…
In this work the theoretical and experimental investigations of Co2TiZ (Z = Si, Ge, or Sn) compounds are reported. Half-metallic ferromagnetism is predicted for all three compounds with only two bands crossing the Fermi energy in the majority channel. The magnetic moments fulfill the Slater-Pauling rule and the Curie temperatures are well above room temperature. All compounds show a metallic like resistivity for low temperatures up to their Curie temperature, above the resistivity changes to semiconducting like behavior. A large negative magnetoresistance of 55% is observed for Co2TiSn at room…
The evolution of the electronic structure and magnetic properties with Co substitution for Fe in the solid solution Fe$_{1-x}$Co$_x$Ga$_3$ was studied by means of electrical resistivity, magnetization, ab-initio band structure calculations, and nuclear spin-lattice relaxation $1/T_1$ of the $^{69,71}$Ga nuclei. Temperature dependencies of the electrical resistivity reveal that the evolution from the semiconducting to the metallic state in the Fe$_{1-x}$Co$_x$Ga$_3$ system occurs at $0.025<x<0.075$. The $^{69,71}(1/T_1)$ was studied as a function of temperature in a wide temperature range of $2…
We have investigated the Co-doping dependence of the structural, transport, and magnetic properties of ε-FeCoSi epilayers grown by molecular beam epitaxy on silicon (111) substrates. Low energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy studies have confirmed the growth of phase-pure, defect-free ε-FeCoSi epitaxial films with a surface roughness of ~1 nm. These epilayers are strained due to lattice mismatch with the substrate, deforming the cubic B20 lattice so that it becomes rhombohedral. The temperature dependence o…
