Robust narrow-gap semiconducting behavior in square-net La$_{3}$Cd$_{2}$As$_{6}$
Mario M. Piva, Marein C. Rahn, Sean M. Thomas, Brian L. Scott, Pascoal G. Pagliuso, Joe D. Thompson, Leslie M. Schoop, Filip Ronning, Priscila F. S. Rosa
ABSTRACT: Narrow-gap semiconductors are sought-after materials due to their potential for long-wavelength detectors, thermoelectrics, and more recently non-trivial topology. Here we report the synthesis and characterization of a new family of narrow-gap semiconductors, $R$$_{3}$Cd$_{2}$As$_{6}$ ($R=$ La, Ce). Single crystal x-ray diffraction at room temperature reveals that the As square nets distort and Cd vacancies order in a monoclinic superstructure. A putative charge-density ordered state sets in at 279~K in La$_{3}$Cd$_{2}$As$_{6}$ and at 136~K in Ce$_{3}$Cd$_{2}$As$_{6}$ and is accompanied by a substantial increase in the electrical resistivity in both compounds. The resistivity of the La member increases by thirteen orders of magnitude on cooling, which points to a remarkably clean semiconducting ground state. Our results suggest that light square net materials within a $I4/mmm$ parent structure are promising clean narrow-gap semiconductors.
We have studied the resistivity of a large number of highly oriented graphite samples with areas ranging from several mm$^2$ to a few $μ$m$^2$ and thickness from $\sim 10 $nm to several tens of micrometers. The measured resistance can be explained by the parallel contribution of semiconducting graphene layers with low carrier density $< 10^9$ cm$^{-2}$ and the one from metallic-like internal interfaces. The results indicate that ideal graphite with Bernal stacking structure is a narrow-gap semiconductor with an energy gap $E_g \sim 40 $meV.
A study of the anisotropy in magnetic, transport and magnetotransport properties of FeSb2 has been made on large single crystals grown from Sb flux. Magnetic susceptibility of FeSb2 shows diamagnetic to paramagnetic crossover around 100K. Electrical transport along two axes is semiconducting whereas the third axis exhibits a metal - semiconductor crossover at temperature Tmin which is sensitive to current alignment and ranges between 40 and 80K. In H=70kOe semiconducting transport is restored for T<300K, resulting in large magnetoresistance [rho(70kOe)-rho(0)]/rho(0)=2200% in the crossover tem…
New carbon forms exhibiting extraordinary physico-chemical properties can be generated from nanostructured precursors under extreme pressure. Nevertheless, synthesis of such fascinating materials is often not well understood that results, as is the case of C60 precursor, in irreproducibility of the results and impeding further progress in the materials design. Here the semiconducting amorphous carbon having bandgaps of 0.1-0.3 eV and the advantages of isotropic superhardness and superior toughness over single-crystal diamond and inorganic glasses are produced from transformation of fullerene a…
Single crystals of $R$Cd$_{0.67}$As$_2$ ($R$ = La and Ce) have been synthesized by high temperature ternary melt and their physical properties have been explored by means of magnetization, specific heat, electrical resistivity, Hall coefficient, and thermoelectric power measurements. $R$Cd$_{0.67}$As$_2$ compounds indicate a (structural) phase transition at high temperatures, accompanied by a remarkable increase of the electrical resistivity with an extremely low carrier concentration. CeCd$_{0.67}$As$_2$ exhibits a large magnetic anisotropy and an antiferromagnetic (AFM) order below $T_{N} = …
Eu-based Zintl-phase materials EuA$_2$Pn$_2$ (A = Mg, In, Cd, Zn; Pn = Bi, Sb, As, P) have generated significant recent interest owing to the complex interplay of magnetism and band topology. Here, we investigated the electronic, magnetic, and electronic properties of the layered Zintl-phase single crystals of EuMg$_2$Sb$_2$ with the trigonal CaAl$_2$Si$_2$ crystal structure (space group $P\bar{3}m1$). Electrical resistivity measurements complemented with angle-resolved photoemission spectroscopy (ARPES) studies find an activated behavior with the intrinsic conductivity at high temperatures in…
As narrow optical bandgap materials, semiconducting single-walled carbon nanotubes (SWCNTs) are rarely regarded as charge donors in photoinduced charge-transfer (PCT) reactions. However, the unique band structure and unusual exciton dynamics of SWCNTs add more possibilities to the classical PCT mechanism.In this work, we demonstrate PCT from photoexcited semiconducting (6,5) SWCNTs to a wide-bandgap wrapping poly-[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(6,6')-(2,2'-bipyridine)] (PFO-BPy) via femtosecond transient absorption spectroscopy. By monitoring the spectral dynamics of the SWCNT polaron, w…
We demonstrate that a high-dimensional neural network potential (HDNNP) can predict the lattice thermal conductivity of semiconducting materials with an accuracy comparable to that of density functional theory (DFT) calculation. After a training procedure based on the force, the root mean square error between the forces predicted by the HDNNP and DFT is less than 40 meV/Å. As typical examples, we present the results for Si and GaN bulk crystals. The deviation from the thermal conductivity calculated using DFT is within 1% at 200 to 500 K for Si and within 5.4% at 200 to 1000 K for GaN.
Quantum well states (QWSs) can form at the surface or interfaces of materials with confinement potential. They have broad applications in electronic and optical devices such as high mobility electron transistor, photodetector and quantum well laser. The properties of the QWSs are usually the key factors for the performance of the devices. However, direct visualization and manipulation of such states are in general challenging. In this work, by using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we directly probe the QWSs generated o…
We show that a diamond shaped periodic network, recently proposed as a model of a spin filter (A. Aharony {\em et al.} \cite{aharon08}) is capable of behaving as a p-type or an n-type semiconductor depending on a suitable choice of the on-site potentials of the atoms occupying the vertices of the lattice, and the strength of the magnetic flux threading each plaquette of the network. A detailed study of the density of states of an infinite network is made together with the conductance of finite sized system to establish the idea.
Piezoresistance, the change of a material's electrical resistance ($R$) in response to an applied mechanical stress ($σ$), is the driving principle of electromechanical devices such as strain gauges, accelerometers, and cantilever force sensors. Enhanced piezoresistance has been traditionally observed in two classes of uncorrelated materials: nonmagnetic semiconductors and composite structures. We report the discovery of a remarkably large piezoresistance in Eu$_5$In$_2$Sb$_6$ single crystals, wherein anisotropic metallic clusters naturally form within a semiconducting matrix due to electronic…
The pentatellurides, ZrTe5 and HfTe5 are layered compounds with one dimensional transition-metal chains that show a never understood temperature dependent transition in transport properties as well as recently discovered properties suggesting topological semimetallic behavior. Here we show that these materials are semiconductors and that the electronic transition is due to a combination of bipolar effects and different anisotropies for electrons and holes. We report magneto-transport properties for two kinds of ZrTe5 single crystals grown with the chemical vapor transport (S1) and the flux met…
It is shown that a two-component percolation model can explain an experimentally observed behavior, namely that a network built up by a mixture of sintered nanocrystalline semiconducting n- and p-grains can exhibit selective behavior, i.e. respond with a resistance increase when exposed to a reducing gas A and with a resistance decrease in response to another reducing gas B. To this end, a simple model is developed based on realistic assumptions about the reactions on the grain surfaces. The resistance is calculated by random walk simulations with nn-, pp- and np-bonds between the grains and t…
Single-walled carbon nanotubes (SWNTs) are potential materials for future nanoelectronics. Since the electronic and optical properties of SWNTs strongly depend on tube diameter and chirality, obtaining SWNTs with narrow (n,m) chirality distribution by selective growth or chemical separation has been an active area of research. Here, we demonstrate that a new, bimetallic FeRu catalyst affords SWNT growth with narrow diameter and chirality distribution in methane CVD. At 600C, methane CVD on FeRu catalyst produced predominantly (6,5) SWNTs according to Uv-vis-NIR absorption and photoluminescence…
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition metal dichalcogenide films provide an opportunity to combine the potential of semiconducting ferroelectrics with the design flexibility of two-dimensional material devices. Here, local control of ferroelectric domains in a marginally twisted WS2 bilayer is demonstrated with a scanning tunneling microscope at room temperature, and their observed reversible e…
Pseudo-one dimensional (pseudo-1D) materials are a new-class of materials where atoms are arranged in chain like structures in two-dimensions (2D). Examples include recently discovered black phosphorus, ReS2 and ReSe2 from transition metal dichalcogenides, TiS3 and ZrS3 from transition metal trichalcogenides and most recently GaTe. The presence of structural anisotropy impacts their physical properties and leads to direction dependent light-matter interactions, dichroic optical responses, high mobility channels, and anisotropic thermal conduction. Despite the numerous reports on the vapor phas…
Artificial Intelligence-Enabled Holistic Design of Catalysts Tailored for Semiconducting Carbon Nanotube Growth
Peking University（北京大学）；National Center for Nanoscience and Technology（国家纳米科学中心）；Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences（中国科学院上海微系统与信息技术研究所）；Suzhou Laboratory（苏州实验室）
Here we report two-dimensional (2D) single-crystalline holey-graphyne (HGY) created an interfacial two-solvent system through a Castro-Stephens coupling reaction from 1,3,5-tribromo-2,4,6-triethynylbenzene. HGY is a new type of 2D carbon allotrope whose structure is comprised of a pattern of six-vertex and eight-vertex rings. The carbon-carbon 2D network of HGY is alternately linked between benzene rings and sp (carbon-carbon triple bond) bonding. The ratio of the sp over sp2 bonding is 50%. It is confirmed that HGY is stable by DFT calculation. The vibrational, optic, and electric properties …
The current-voltage characteristics of a new range of devices built around Weyl semimetals has been predicted using the Landauer formalism. The potential step and barrier have been reconsidered for a three-dimensional Weyl semimetals, with analogies to the two-dimensional material graphene and to optics. With the use of our results we also show how a Veselago lens can be made from Weyl semimetals, e.g. from NbAs and NbP. Such a lens may have many practical applications and can be used as a probing tip in a scanning tunneling microscope (STM). The ballistic character of Weyl fermion transport i…
We report the theoretical prediction of a new class of spintronic materials, namely bipolar magnetic semiconductor (BMS), which is also supported by our experimental data. BMS acquires a unique band structure with unequal band gaps for spin up and down channels, and thus are useful for tunable spin transport based applications such as spin filters. The valence band (VB) and conduction band (CB) in BMS approach the Fermi level through opposite spin channels, and hence facilitate to achieve reversible spin polarization which are controllable via applied gate voltage. We report the quaternary Heu…
The exponentially growing number of interconnected devices in the Internet of Things poses an increasing amount of challenges to the field of cyber security and encryption. For authenticated use and communication, each device must securely store and apply secret keys without giving a potential attacker the possibility to access them neither by software nor hardware attacks. In 2002, the concept of Physical Unclonable Function emerged to counteract the inherent threats, associated with this trend. Physical disordered systems are excited by external stimuli and can thereby be uniquely identified…
We perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 20 GHz employing a vector network analyzer with a 2.4 mm coaxial sensor which is terminated by the sample under test. While the material parameters (conductivity and permittivity) can be easily extracted from the obtained impedance data if the sample is metallic, no direct solution is possible if the material under investigation is an insulator. Focusing on doped semiconductors with largely varying conductivity, here we present a closed calibration and evaluation procedure for frequencies up to 5 …
Engineering a Correlated Narrow-Gap Semiconductor: Effects of Ga Substitution in EuZn$_2$P$_2$
Universidade Federal do ABC (UFABC)（圣安德雷联邦大学）；Instituto de Física, Universidade de São Paulo (USP)（圣保罗大学物理研究所）；Centro Brasileiro de Pesquisas Físicas（巴西物理研究中心）；Departamento de Física, Universidad del Valle（瓦尔列大学物理系）
New blends of simply synthesized quasi two-dimensional (quasi-2D) hydrophobic perovskite semiconductors, employed in high performance light emitting diodes (LEDs) which function due to excitonic energy transfer effects, are reported. These materials are self-assembled blends of 2D, quasi-2D and three-dimensional (3D) hybrid organic-inorganic semiconductors (HOIS). Moreover, shown for the first time, crude mixing of 3D perovskite and unprotonated amines provides similar semiconductors. HOIS reported here are based on the organic cations CH3NH3+, CH3(CH2)7CH=CH(CH2)8NH3+ or C6H5CH2CH2NH3+ and in…
A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomical…
