激发态能带结构变化对InGaN发光二极管效率的影响
Influences of excitation-dependent bandstructure changes on InGaN light-emitting diode efficiency
摘要：
由于量子限制斯塔克效应的屏蔽作用，纤锌矿量子阱的能带结构特性会随着载流子密度的变化而发生明显的变化。将这些变化的InGaN发光二极管模型的方法进行了描述。在包络近似下，通过求解Poisson方程和k \cdotp方程，计算了不同载流子密度下的能带结构.的信息被用作动力学模型中的动量分辨的电子和空穴状态的人口的输入。该方法的应用是通过模拟设备内部量子效率作为激发的函数来说明。
英文摘要：
Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantum-confined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode model is described. Bandstructure is computed for different carrier densities by solving Poisson and k\cdotp equations in the envelop approximation. The information is used as input in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach is illustrated by modeling device internal quantum efficiency as a function of excitation.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
