具有多边形Au/Al纳米颗粒的局域表面等离子体增强的InGaN-based发光二极管
Localized surface plasmon enhanced InGaN-based light-emitting diodes with polygonal Au/Al nanoparticles
摘要：
局域表面等离子体激元（LSP）在提高发光二极管（LED）的发光效率方面发挥了重要作用。在这篇报道中，我们利用Ni纳米多孔膜作为刻蚀掩模，在InGaN基LED的p-GaN层中制备了多边形纳米孔，然后将Au/Al金属纳米颗粒嵌入到纳米孔中，形成LSP结构。已经清楚地观察到LSP和LED之间的耦合。结果表明，在较高的电流注入条件下，LED的光输出增加了46%，并且增益峰值位置向LSP峰值共振能量移动。当耦合距离从60 nm减小到30 nm时，最大增强因子增加到2.38。上述结果表明，多边形金属纳米颗粒的LSP是一种非常有前途的结构，以提高InGaN基LED的发光性能。
英文摘要：
Localized surface plasmons (LSPs) have played a significant role in improving the light emission efficiency of light emitting diodes (LEDs). In this report, polygonal nanoholes have been fabricated in the p-GaN layer of InGaN-based LEDs by using Ni nanoporous film as the etching mask, and then Au/Al metal nanoparticles are embedded in the nanoholes to form the LSP structure. The coupling between the LSP and the LED has been clearly observed. The results show that the light output of the LEDs has been increased by 46% at higher current injection condition, and together with a shift of the gain peak position to the LSP peak resonance energy. As the coupling distance is decreased from 60 nm to 30 nm, the maximum enhancement factor increases to 2.38. The above results indicate that the LSP from the polygonal metal nanoparticles is a kind of very promising structure to enhance the lighting performance of the InGaN-based LEDs.
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