Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods

Chentian Shi, Chunfeng Zhang, Fan Yang, Min Joo Park, Joon Seop Kwak, Sukkoo Jung, Yoon-Ho Choi, Xiaoyong Wang, Min Xiao

备注：: 18 Pages,5 figures
发表信息：: Opt. Express, 22, A370(2014)
DOI：: 10.1364/OE.22.00A790

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Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

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