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arXiv 1105.2248cond-mat.mes-hall
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太赫兹波段光调制对石墨烯非线性电子输运的影响

Optical Modulation Effects on Nonlinear Electron Transport in Graphene in Terahertz Frequency Range

Danhong Huang, Godfrey Gumbs, O. Roslyak

摘要:

我们描述了非常快的电子动力学的石墨烯纳米粒子驱动的控制电磁场在太赫兹制度。当进入非线性输运状态时,作为偏压函数的迁移率具有较大的阈值。该值取决于温度、电子密度、杂质散射强度、纳米尺度宽度和线边粗糙度的相关长度。已经观察到超过该阈值的增强的电子迁移率,这与具有较大群速度的高能态的初始加热电子有关。然而,这种迁移率的增强很快达到最大值,这取决于石墨烯中的费米速度和急剧增加的声子散射。在线性和非线性输运区,迁移率具有超线性和亚线性的温度依赖性,这分别归因于电子通过弹性散射从右费米边扫向左费米边和通过场致电子加热从低能态向高能态移动的结果.阈值场被推高的相关长度在高场制度的减少,并进一步伴随着在迁移率增强的幅度减小。这意味着一个异常的高场增加的线边缘粗糙度散射降低相关长度,由于高能量状态的占领由场致电子加热。此外,已经提出了在其栅极上的光学调制下的石墨烯晶体管的自洽器件建模,其采用高达三阶的玻尔兹曼矩方程来描述快速载流子动力学,并且采用耦合到玻尔兹曼方程的全波电磁学来描述总场的时空依赖性。

英文摘要:

We describe very fast electron dynamics for a graphene nanoribbon driven by a control electromagnetic field in the terahertz regime. The mobility as a function of bias possesses a large threshold value when entering a nonlinear transport regime. This value depends on the temperature, electron density, impurity scattering strength, nanoribbon width and correlation length for the line-edge roughness. An enhanced electron mobility beyond this threshold has been observed, which is related to the initially-heated electrons in high energy states with a larger group velocity. However, this mobility enhancement quickly reaches a maximum governed by the Fermi velocity in graphene and the dramatically increased phonon scattering. Super-linear and sub-linear temperature dependences of the mobility are seen in the linear and nonlinear transport regimes, which is attributed separately to the results of sweeping electrons from the right Fermi edge to the left one through elastic scattering and moving electrons from low-energy states to high-energy ones through field-induced electron heating. The threshold field is pushed up by a decreased correlation length in the high field regime, and is further accompanied by a reduced magnitude in the mobility enhancement. This implies an anomalous high-field increase of the line-edge roughness scattering with decreasing correlation length due to the occupation of high-energy states by field-induced electron heating. Additionally, a self-consistent device modeling has been proposed for graphene transistors under an optical modulation on its gate, which employs Boltzmann moment equations up to the third order for describing fast carrier dynamics and full wave electromagnetics coupled to the Boltzmann equation for describing spatial-temporal dependence of the total field.

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