反馈式自旋阀忆阻系统
A Feedback Spin-Valve Memristive System
摘要：
我们在理论上提出了一种基于控制自旋极化的巨磁阻材料的广义忆阻系统，该系统使用具有经典霍尔效应的反馈回路。动力学可以表现出忆阻收缩滞后回路，其具有不位于原点的自交叉结。此外，还可以观察到装置中的单环轨道。我们还提供了一个充分条件的基础上的Floquet指数估计的稳定性。分析表明，在一类不服从欧姆定律的被动记忆系统中，非原点穿越动力学是普遍允许的。我们进一步发展了普遍的同质定义广义异构忆阻系统的一个扩大的概念，不允许在原点的自交叉结，并最终到复合存储器电子系统。
英文摘要：
We propose theoretically a generalized memristive system based on controlled spin polarizations in the giant magnetoresistive material using a feedback loop with the classical Hall Effect. The dynamics can exhibit a memristive pinched hysteretic loop that possesses the self-crossing knot not located at the origin. Additionally, one can also observe a single-looped orbit in the device. We also provide a sufficient condition for the stability based on an estimation of the Floquet exponent. The analysis shows that the non-origin-crossing dynamics is generally permitted in a class of passive memory systems that are not subject to Ohm's Law. We further develop the prevailing homogeneous definition to a broadened concept of generalized heterogeneous memristive systems, permitting no self-crossing knot at the origin, and ultimately to the compound memory electronic systems.
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