具有GaAs势垒的高度均匀InGaAs金字塔量子点的物理性质：预图案化衬底中的精细结构分裂
Physical properties of highly uniform InGaAs pyramidal quantum dots with GaAs barriers: Fine structure splitting in pre-patterned substrates
摘要：
InGaAs量子点嵌入GaAs势垒中，生长在7 μm边的倒四面体凹槽中，在发射的均匀性和光谱窄度方面表现出有趣的特性。本文对精细结构分裂进行了研究。对大约40个单量子点的研究揭示了两个要点：（1）该参数的值在点与点之间非常相似，再次证明了金字塔QD性质的均匀性，（2）在所研究的样品中，几乎没有机会找到具有自然零分裂的点，但是所发现的值（平均值为13 μeV）应该总是保证利用某种校正技术（例如，施加小磁场）恢复简并的能力。
英文摘要：
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 μm edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study on the fine structure splitting (FSS). The investigation of about 40 single quantum dots revealed two main points: (1) the values of this parameter are very similar from dot to dot, proving again the uniformity of Pyramidal QD properties, (2) there is a little chance, in the sample investigated, to find a dot with natural zero splitting, but the values found (the mean being 13 μeV) should always guarantee the capability of restoring the degeneracy with some corrective technique (e.g. application of a small magnetic field).
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
