提供高均匀性和光谱纯度的位置控制的量子点系统
A site-controlled quantum dot system offering both high uniformity and spectral purity
摘要：
在本文中，我们报告的位置控制的InGaAs点与GaAs势垒生长在金字塔形凹槽的金属有机气相外延的光学性质。从一个合奏的量子点的激子发射的非均匀加宽被发现是异常狭窄的，与1.19 meV的标准偏差，和光谱纯度的发射线从个别点被发现是非常高的（18-30微电子伏特），与其他网站控制的系统相比。
英文摘要：
In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be unusually narrow, with a standard deviation of 1.19 meV, and spectral purity of emission lines from individual dots is found to be very high (18-30 ueV), in contrast with other site-controlled systems.
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