量子点纳米结构的复杂光学特征及其在倒金字塔形凹槽中的行为
Complex optical signatures from quantum dot nanostructures and behavior in inverted pyramidal recesses
摘要：
本文研究了在（111）B取向的GaAs衬底上生长的InGaAs异质结的结构和光学性质。首先，组成的限制势垒材料（GaAs在这项工作中）和它的生长温度被示出的一些关键参数，确定的主要量子点的属性，包括非平凡的发射能量依赖性，激子图案和不寻常的光致发光能量排序的InGaAs集成纳米结构。其次，在我们的结构中，在众所周知的结构（一个量子点和三个横向量子线和量子阱）旁边，证明了以前未识别类型的InGaAs纳米结构-三个角量子点的形成。研究结果表明，金字塔量子点系统的复杂性，强烈依赖于样品的设计，这应该考虑在新设计的实验项目中选择高度对称（中心）量子点。
英文摘要：
A study of previously overlooked structural and optical properties of InGaAs heterostructures grown on (111)B oriented GaAs substrates patterned with inverted 7.5 um pitch pyramidal recesses is presented. First, the composition of the confinement barrier material (GaAs in this work) and its growth temperature are shown as some of the key parameters that determine the main quantum dot properties, including nontrivial emission energy dependence, excitonic pattern and unusual photoluminescence energetic ordering of the InGaAs ensemble nanostructures. Secondly, the formation of a formerly unidentified type of InGaAs nanostructures - three corner quantum dots - is demonstrated in our structures next to the well-known ones (a quantum dot and three lateral quantum wires and quantum wells). The findings show the complexity of the pyramidal quantum dot system which strongly depends on the sample design and which should be considered when selecting highly symmetric (central) quantum dots in newly designed experimental projects.
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