A. G. Winbow, J. R. Leonard, M. Remeika, Y. Y. Kuznetsova, A. A. High, A. T. Hammack, L. V. Butov, J. Wilkes, A. A. Guenther, A. L. Ivanov, M. Hanson, A. C. Gossard
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4 pages, 4 figures + supplemental material including two videos
We report on the study of indirect excitons in moving lattices - conveyers created by a set of AC voltages applied to the electrodes on the sample surface. The wavelength of this moving lattice is set by the electrode periodicity, the amplitude is controlled by the applied voltage, and the velocity is controlled by the AC frequency. We observed the dynamical localization-delocalization transition for excitons in the conveyers and measured its dependence on the exciton density and conveyer amplitude and velocity. We considered a model for exciton transport via conveyers. The theoretical simulations are in agreement with the experimental data.
We present a method for determining correlations in a gas of indirect excitons in a semiconductor quantum well structure. The method involves subjecting the excitons to a periodic electrostatic potential that causes modulations of the exciton density and photoluminescence (PL). Experimentally measured amplitudes of energy and intensity modulations of exciton PL serve as an input to a theoretical estimate of the exciton correlation parameter and temperature. We also present a proof-of-principle demonstration of the method for determining the correlation parameter and discuss how its accuracy ca…
We report on the principle and realization of a new trap for excitons -- the diamond electrostatic trap -- which uses a single electrode to create a confining potential for excitons. We also create elevated diamond traps which permit evaporative cooling of the exciton gas. We observe collection of excitons towards the trap center with increasing exciton density. This effect is due to screening of disorder in the trap by the excitons. As a result, the diamond trap behaves as a smooth parabolic potential which realizes a cold and dense exciton gas at the trap center.
We report on a method for the realization of two-dimensional electrostatic lattices for excitons using patterned interdigitated electrodes. Lattice structure is set by the electrode pattern and depth of the lattice potential is controlled by applied voltages. We demonstrate square, hexagonal, and honeycomb lattices created by this method.
Technological advances allow for tunable lateral confinement of cold dipolar excitons in coupled quantum wells. We consider theoretically the Josephson effect between exciton condensates in two traps separated by a weak link. The flow of the exciton supercurrent is driven by the dipole energy difference between the traps. The Josephson oscillations may be observed after ensemble average of the time correlation of photons separately emitted from the two traps. The fringe visibility is controlled by the trap coupling and is robust against quantum and thermal fluctuations.
The screened Coulomb potential plays a crucial role in the binding energies of excitons in a thin dielectric slab. The asymptotic behavior of this potential is studied when the thickness of the slab is very small as compared to the exciton Bohr radius. A regularized expression is given and the exact effective 2D potential is derived. These expressions may be useful for the computation of the exciton binding energy in 2D or quasi-2D materials.
We study spatially indirect excitons confined in a 10 $μ$m wide electrostatic trap of a GaAs double quantum well. We introduce a technique to control the amplitude of the electric field interacting with the excitons electric dipole, with nanosecond precision. Our approach relies on electronic waveforms corrected for the distorsions occurring at highest frequencies so that impedance matching is not necessary. Thus, we manipulate the confinement of cold gases without inducing sizeable perturbations down to sub-Kelvin bath temperatures.
Recent experimental progresses have demonstrated the great potential of electronic and excitonic moiré superlattices in transition metal dichalcogenides (TMDs) for quantum many-body simulations and quantum optics applications. Here we reveal that the moiré potential landscapes in the TMDs heterostructures have an electrostatic origin from the spontaneous charge transfer across the heterointerfaces dependent on the atomic registry. This allows engineering tunable multi-chromatic superlattices through the interference of moiré potentials from independently configurable heterointerfaces in multil…
In 1H monolayer transition metal dichalcogenide, the inversion symmetry is broken, while the reflection symmetry is maintained. On the contrary, in the bilayer, the inversion symmetry is restored, but the reflection symmetry is broken. As a consequence of these contrasting symmetries, here we show that bilayer WS$_2$ exhibits a quantum confined Stark effect (QCSE) that is linear with the applied out-of-plane electric field, in contrary to a quadratic one for a monolayer. The interplay between the unique layer degree of freedom in the bilayer and the field driven partial inter-conversion betwee…
The objective of this work is to numerically integrate in space and time the effective-mass Schrodinger equation for an excitonic wave packet in a coupled quantum-well system under a time-dependent electric field. Taking as a starting point a time-dependent Hartree potential, we derive the nonlinear dynamical evolution of the excitonic wave function. We found that the system resonant condition can be modified owing to the reaction field generated by a charge dynamically trapped in the quantum-well pair. As a result, this study raises a broader question: is it possible to create an electrostati…
With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-living, spatially indirect excitons. We study the transition from multi excitons down to a single indirect exciton. In the few exciton regime, we observe discrete emission lines reflecting the interplay of dipolar interexcitonic repulsion and spatial quantization. The quantum dot states are tunable by gate voltage and employing a magnetic field results in a diamagnetic shift. The scheme introduces a new gate-defined plat…
Exciton dissociation at heterojunctions in photovoltaic devices is not completely understood despite being fundamentally necessary to generate electrical current. One of the fundamental issues for ab initio calculations is that hybrid interfaces combining materials with Wannier-Mott excitons and those with Frenkel excitons can easily require thousands of atoms to encompass the exciton-wave function. The problem is further exacerbated by a large permittivity difference at the interface, which requires meso-scale boundary conditions to accurately predict electrostatic potentials. For these reaso…
We report on the modulation of indirect excitons (IXs) as well as their transport by moving periodic potentials produced by surface acoustic waves (SAWs). The potential modulation induced by the SAW strain modifies both the band gap and the electrostatic field in the quantum wells confining the IX, leading to changes in their energy. In addition, this potential capture and transports IXs over several hundreds of μm. While the IX packets keep to a great extent their spatial shape during transport by the moving potential, the effective transport velocity is lower than the SAW group velocity and …
The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical potentials as a gate voltage is applied. One could also study intriguing physical phenomena such as electrically induced topological transitions and many-body spectral reconstructions. Here we show that submicron angle-resolved photoemission (micro-ARPES) applied to two-dimensional (2D) van der Waals heterostructures affords this ability. In graphene devices,…
Active control of light-matter interactions in semiconductors is critical for realizing next generation optoelectronic devices, with tunable control of the systems optical properties via external fields. The ability to manipulate optical interactions in active materials coupled to cavities via geometrical parameters, which are fixed along with dynamic control with applied fields opens up possibilities of controlling exciton lifetimes, oscillator strengths and their relaxation properties. Here, we demonstrate electrical control of exciton-plasmon polariton coupling strength of a two-dimensional…
Optical Voltage Profiling of 2D Semiconductors via Proximal Exciton Sensing
University of California, Berkeley（加州大学伯克利分校）；Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室）；Kavli Energy NanoScience Institute（卡弗里纳米科学能源研究所）；National Institute for Materials Science（材料科学国立研究所）
