应变平衡量子柱
Strain balanced quantum posts
摘要：
量子柱通过紧密间隔的量子点层的外延生长来组装，从而调制半导体合金（通常为InGaAs）的组成。与大多数自组装纳米结构相比，量子柱的高度可以以纳米精度控制，直到由晶格失配引起的累积应力限制的最大值。在这里，我们提出了一种应变补偿技术的基础上控制掺入磷，这大大增加了最大可达到的量子后的高度。所得纳米结构的发光呈现出巨大的线性偏振各向异性。
英文摘要：
Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most self-assembled nanostructures, the height of quantum posts can be controlled with nanometer precision, up to a maximum value limited by the accumulated stress due to the lattice mismatch. Here we present a strain compensation technique based on the controlled incorporation of phosphorous, which substantially increases the maximum attainable quantum post height. The luminescence from the resulting nanostructures presents giant linear polarization anisotropy.
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