（Ga，Mn）As各向异性磁电阻的光刻和电控应变效应
Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As
摘要：
已经证明，（Ga，Mn）As中的磁晶各向异性对小至10^-4的晶格应变敏感，并且可以通过生长期间的晶格参数工程、通过生长后光刻以及通过将（Ga，Mn）As样品与压电换能器结合来控制应变。在这项工作中，我们表明，类似的效果中观察到的各向异性磁电阻（AMR）的晶体组件。光刻或电诱导的应变变化可以产生大于晶体AMR的晶体AMR分量，并且是未处理的（Ga，Mn）As材料的总AMR的显著部分。在这些实验中，我们还观察到新的高阶项的现象学AMR表达式，并发现应变变化效应可以发挥重要作用的微磁和磁输运特性的（Ga，Mn）As横向纳米收缩。
英文摘要：
It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)As are sensitive to lattice strains as small as 10^-4 and that strain can be controlled by lattice parameter engineering during growth, through post growth lithography, and electrically by bonding the (Ga,Mn)As sample to a piezoelectric transducer. In this work we show that analogous effects are observed in crystalline components of the anisotropic magnetoresistance (AMR). Lithographically or electrically induced strain variations can produce crystalline AMR components which are larger than the crystalline AMR and a significant fraction of the total AMR of the unprocessed (Ga,Mn)As material. In these experiments we also observe new higher order terms in the phenomenological AMR expressions and find that strain variation effects can play important role in the micromagnetic and magnetotransport characteristics of (Ga,Mn)As lateral nanoconstrictions.
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