原位累积应力测量：应用于应变平衡量子点和量子柱
In-situ accumulated stress measurements: application to strain balanced quantum dots and quantum posts
摘要：
在这项工作中，我们使用在原位累积应力监测技术，以评估应变平衡过程中的InAs/GaAs量子点和量子柱的应力的演变。这些结果与模拟和其他常用的应变平衡标准的比较表明，有必要考虑的过程中的运动学，而不仅仅是沉积材料的标称值。我们发现，衬底温度起着重要的作用，在补偿过程中，它是必要的，以达到最佳的补偿条件，考虑到它。该技术在量子柱上的应用使我们能够制造出特殊长度（120 nm）的纳米结构。原位累积测量表明，即使在较短的纳米结构中，松弛过程也可以被抑制，从而提高材料质量。
英文摘要：
In this work we use the in-situ accumulated stress monitoring technique to evaluate the evolution of the stress during the strain balancing of InAs/GaAs quantum dots and quantum posts. The comparison of these results with simulations and other strain balanced criteria commonly used indicate that it is necessary to consider the kinematics of the process, not only the nominal values for the deposited materials. We find that the substrate temperature plays a major role on the compensation process and it is necessary to take it into account in order to achieve the optimum compensation conditions. The application of the technique to quantum posts has allowed us to fabricate nanostructures of exceptional length (120 nm). In situ accumulated measurements show that, even in shorter nanostrcutures, relaxation processes can be inhibited with the resulting increase in the material quality.
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