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arXiv 1102.4386cond-mat.mes-hallcond-mat.supr-con
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超导体-石墨烯-超导体约瑟夫森结中带隙电导异常的研究

Above-gap Conductance Anomaly Studied in Superconductor-graphene-superconductor Josephson Junctions

Jae-Hyun Choi, Hu-Jong Lee, Yong-Joo Doh

摘要:

研究了超导体-石墨烯-超导体(SGS)约瑟夫森结的电输运性质。在低偏压下,我们观察到了常规的邻近耦合约瑟夫森效应,如超电流流过石墨烯,Andreev反射导致的微分电导的子隙结构,以及与石墨烯垂直的磁场H对临界电流Ic的周期性调制。然而,在高于超导能隙电压的高偏压下,我们还观察到微分电导的异常跳跃,其电压位置对背栅电压Vg敏感。我们的广泛的研究与不同的Vg,温度和H表明,上述间隙结构发生在一个特征功率P*,这是无关的Vg为一个给定的结。P* 的温度和H依赖性很好地解释了石墨烯中电子温度的增加。

英文摘要:

We investigated the electrical transport properties of superconductor-graphene-superconductor (SGS) Josephson junctions. In low voltage bias, we observed conventional proximity-coupled Josephson effect, such as the supercurrent flow through the graphene, sub-gap structure of differential conductance due to Andreev reflection, and periodic modulation of the critical current Ic with perpendicular magnetic field H to the graphene. In high bias above the superconducting gap voltage, however, we also observed an anomalous jump of the differential conductance, the voltage position of which is sensitive to the backgate voltage Vg. Our extensive study with varying Vg, temperature, and H reveals that the above-gap structure takes place at a characteristic power P*, which is irrespective of Vg for a given junction. Temperature and H dependences of P* are well explained by the increase of the electron temperature in graphene.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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