We introduce a new functional nanoscale device, a single-electron heat diode, consisting of two quantum dots or metallic islands coupled to electronic reservoirs by tunnel contacts. Electron transport through the system is forbidden but the capacitive coupling between the two dots allows electronic fluctuations to transmit heat between the reservoirs. When the reservoir temperatures are biased in the forward direction, heat flow is enabled by a four-step sequential tunneling cycle, while in the reverse-biased configuration this process is suppressed due to Coulomb blockade effects. In an optimal setup the leakage heat current in the reverse direction is only a few percent of the forward current.
The quantum dot arrays (QDAs) embedded into inhomogeneous nanowires connected to metallic electrodes show an electron heat rectification effect, which is attributed to the thermal voltage arising from a temperature bias and the QDA with a broken spatial inversion symmetry. The staircase energy levels of QDAs can be controlled to the resonant and off resonant transports for electrons in the forward and backward temperature biases, respectively. The effect of electron Coulomb interactions on the rectification efficiency of heat diode is clarified by the case of double QDs. We find that it is imp…
Harmonic oscillator chains connecting two harmonic reservoirs at different constant temperatures cannot act as thermal diodes, irrespective of structural asymmetry. However, here we prove that perfectly harmonic junctions can rectify heat once the reservoirs (described by white Langevin noise) are placed under temperature gradients, which are asymmetric at the two sides, an effect that we term "temperature-gradient harmonic oscillator diodes". This nonlinear diode effect results from the additional constraint -- the imposed thermal gradient at the boundaries. We demonstrate the rectification b…
We investigate the heat transport properties of a three-level system coupled to three thermal baths, assuming a model based on superconducting circuit implementations. The system-bath coupling is mediated by resonators which serve as frequency filters for the different qutrit transitions. Taking into account the finite quality factors of the resonators, we find thermal rectification and circulation effects not expected in configurations with perfectly-filtered couplings. Heat leakage in off-resonant transitions can be exploited to make the system work as an ideal diode where heat flows in the …
We demonstrate the possibility to rectify the nanoscale radiative heat flux between two nanoparticles by coupling them with the nonreciprocal surface modes of a magneto-optical substrate in a Voigt configuration. When the non-reciprocal medium supports a surface wave in the spectral window where heat exchanges take place the rectification coefficient can reach large values opening so the way to the design of true thermal diodes.
This mini-review addresses a bedrock problem for the advance of phononics: the building of feasible and efficient thermal diodes. We revisit investigations in classical and quantum systems. For the classical anharmonic chains of oscillators, the most used model for the study of heat conduction in insulating solids, we recall the ubiquitous occurrence of thermal rectification in graded systems, and we show that the match between graded structures and long range interactions is an efficient mechanism to increase the rectification factor. For the cases of genuine quantum models, we present the sp…
The density of states of proximitized normal nanowires interrupting superconducting rings can be tuned by the magnetic flux piercing the loop. Using these as the contacts of a single-electron transistor allows to control the energetic mirror asymmetry of the conductor, this way introducing rectification properties. In particular, we show that the system works as a diode that rectifies both charge and heat currents and whose polarity can be reversed by the magnetic field and a gate voltage. We emphasize the role of dissipation at the island. The coupling to substrate phonons enhances the effect…
Hyperbolic metamaterials (HMMs) support propagating waves with arbitrarily large wavevectors over broad spectral ranges, and are uniquely valuable for engineering radiative thermal transport in the near field. Here, by employing a rational design approach based on the electromagnetic local density of states, we demonstrate the ability of HMMs to substantially rectify radiative heat flow. Our idea is to establish a forward-biased scenario where the two HMM-based terminals of a thermal diode feature overlapped hyperbolic bands which result in a large heat current, and suppress the reverse heat f…
With the objective to understand microscopic principles governing thermal energy flow in nanojunctions, we study phononic heat transport through metal-molecule-metal junctions using classical molecular dynamics (MD) simulations. Considering a single-molecule gold-alkanedithiol-gold junction, we first focus on aspects of method development and compare two techniques for calculating thermal conductance: (i) The Reverse Nonequilibrium MD (RNEMD) method, where heat is inputted and extracted at a constant rate from opposite metals. In this case, the thermal conductance is calculated from the nonequ…
Similar to the diode in electronics, a thermal diode is a two-terminal device that allows heat to transfer easier in one direction (forward bias) than in the opposite direction (reverse bias). Unlike conductive and convective thermal diodes, a photonic thermal diode operates in a contactless mode and may afford a large operating temperature range. In this work, a novel near-field photonic thermal diode with hexagonal boron nitride (hBN) and indium antimonide (InSb) is proposed and theoretically demonstrated. The temperature dependence of the interband absorption of InSb is used to couple (or d…
The measurement of the bandgap in quasi-one dimensional materials such as carbon nanotubes is challenging due to its dimensionality. In this work, we measure the electronic bandgap of networks of polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWCNTs) using non-ideal p-n diodes. Using these diodes, we measure the electronic bandgap and excitonic levels of different polymer-wrapped s-SWCNTs with varying diameters: arc discharge (~1.55nm), (7,5) (0.83nm), and (6,5) (0.76nm). Our values are consistent with theoretical predictions, providing insight into the fundamental properties…
We study in this article how heat can be exchanged between two level systems (TLS) each of them being coupled to a thermal reservoir. Calculation are performed solving a master equation for the density matrix using the Born markov-approximation. We analyse the conditions for which a thermal diode and a thermal transistor can be obtained as well as their optimization.
Double layer two-dimensional electron systems at high perpendicular magnetic field are used to realize magnetic tunnel junctions in which the electrons at the Fermi level in the two layers have either parallel or anti-parallel spin magnetizations. In the anti-parallel case the tunnel junction, at low temperatures, behaves as a nearly ideal spin diode. At elevated temperatures the diode character degrades as long-wavelength spin waves are thermally excited. These tunnel junctions provide a demonstration that the spin polarization of the electrons in the $N=1$ Landau level at filling factors $ν=…
We analyze the operation of the graphene n+-i-n-n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region. The momentum transfer of the injected ballistic electrons could lead to an effective Coulomb drag of the quasi-equilibrium electrons in the n-region and the plasma instability in the GFETs and GLDs. The instability enables the generation of terahertz radiation. The obtained results can be used for the optimization of the structures under consideration for different devices, in particular, terahertz emitters.
Spin dependent electron transport through a magnetic resonant tunneling diode
纳米结构中的电子输运性质可以例如通过使用半经典维格纳形式体系或量子力学格林函数形式体系来建模。我们比较了磁共振隧穿二极管的情况下，这些方法的性能和结果。我们在自洽自旋密度泛函理论中实现了这两种方法。我们的数值实现的维格纳形式主义是基于有限差分格式，而格林函数形式主义的有限元方法。作为一个具体的应用程序，我们认为Slobodskyy等研究的设备。[Phys. Rev. Lett. 90，246601（2003）]，并分析其实验结果。维格纳函数和格林函数形式主义给出了类似的电子密度和电位，但令人惊讶的是，前一种方法需要更多的计算机资源，以获得数值准确的结果电流。这两种形式都可以成功地用于模拟磁共振隧穿二极管结构。
We propose and demonstrate a nanoscale vacuum-tube diode triggered by few-cycle near-infrared laser pulses. It represents an ultrafast electronic device based on light fields, exploiting near-field optical enhancement at surfaces of two metal nanotips. The sharper of the two tips displays a stronger field-enhancement, resulting in larger photoemission yields at its surface. One laser pulse with a peak intensity of $4.7\times 10^{11}$ W/cm$^2$ triggers photoemission of ${\sim }16$ electrons from the sharper cathode tip, while emission from the blunter anode tip is suppressed by $19$ dB to ${\si…
Comment on "Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop" [Phys. Rev. Lett. 110, 177406 (2013)]
Nonreciprocal perfect Coulomb drag in electron-hole bilayers: coherent exciton superflow as a diode
Tsung-Dao Lee Institute & School of Physics and Astronomy, Shanghai Jiao Tong University（上海交大李政道研究所与物理与天文学院）；Shanghai Branch, Hefei National Laboratory（合肥国家实验室上海分部）
Heterostructures comprising of silicon (Si), molybdenum disulfide (MoS${_2}$) and graphene are investigated with respect to the vertical current conduction mechanism. The measured current-voltage (I-V) characteristics exhibit temperature dependent asymmetric current, indicating thermally activated charge carrier transport. The data is compared and fitted to a current transport model that confirms thermionic emission as the responsible transport mechanism across the devices. Theoretical calculations in combination with the experimental data suggest that the heterojunction barrier from Si to MoS…
A superconducting diode is an electronic device that conducts supercurrent and exhibits zero resistance primarily for one direction of applied current. Such a dissipationless diode is a desirable unit for constructing electronic circuits with ultralow power consumption. However, realizing a superconducting diode is fundamentally and technologically challenging, as it usually requires a material structure without a centre of inversion, which is scarce among superconducting materials. Here, we demonstrate a superconducting diode achieved in a conventional superconducting film patterned with a co…
We demonstrate Resonant Tunneling Diodes, embedded in double metal cavities, strongly coupled to the cavity field, while maintaining their electronic properties. We measure the polariton dispersion and find a relative vacuum Rabi splitting of 16%, which explicitly qualifies for the strong-coupling regime. Additionally we show that electronic transport has a significant influence on the polaritons by modulating the coupling strength. The merge between electronic transport and polaritonic physics in our devices opens up a new aspect of cavity quantum electro-dynamics and integrated photonics.
We consider theoretically the realization of a tunable terahertz light emitting diode from a quantum well with dressed electrons placed in a highly doped p-n junction. In the considered system the strong resonant dressing field forms dynamic Stark gaps in the valence and conduction bands and the electric field inside the p-n junction makes the QW asymmetric. It is shown that the electrons transiting through the light induced Stark gaps in the conduction band emit photons with energy directly proportional to the dressing field. This scheme is tunable, compact, and shows a fair efficiency.
Two-dimensional electron and hole gases separated by a few nm from each other are produced in p-i-n diodes based upon MBE-grown GaAs/AlGaAs heterostructures. At such interlayer distances, the exciton formation and possibly Bose-Einstein condensation (BEC) is expected. We measure the capacitance between the layers and find it to oscillate as a function of the bias voltage. The peak values exceed the geometric capacitance by up to a factor of two. The surprisingly regular periods of the oscillations are of the order of 10 to 30 mV and scale linearly with the inverse of the thickness, between 60 …
Characterization of Tunnel Diode Oscillator for Qubit Readout Applications
RIKEN Center for Quantum Computing, RIKEN（RIKEN量子计算中心）；Department of Applied Sciences, Delft University of Technology（代尔夫特理工大学应用科学系）；Physics of Quantum Fluids and Crystals, B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine（乌克兰国家科学院B.维尔金低温物理与工程研究所量子流体与晶体物理部）；Institute of Physics, Kazan Federal University（喀山联邦大学物理研究所）；Cluster for Pioneering Research, RIKEN（RIKEN前沿研究集群）
The field of thermotronics aims to develop thermal circuits that operate with temperature biases and heat currents just as how electronic circuits are based on voltages and electric currents. Here, we investigate a thermal half-wave rectifier based on a quantum two-level system (a qubit) that is driven by a periodically modulated temperature difference across it. To this end, we present a non-equilibrium Green's function technique, which we extend to the time domain to account for the time-dependent temperature in one of two thermal reservoirs connected to the qubit. We find that the qubit act…
