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arXiv 1102.3677cond-mat.mtrl-sci
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低Mn含量(Ga,Mn)As层退火制备的GaAs中(Mn,Ga)As纳米晶的形成过程及超顺磁性

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

Janusz Sadowski, Jaroslaw Z. Domagala, Roland Mathieu, Andras Kovacs, Takeshi Kasama, Rafal E. Dunin-Borkowski, Tomasz Dietl

摘要:

采用X射线衍射、透射电子显微镜和磁化强度测量等方法研究了富Mn(Mn,Ga)As纳米晶在GaAs中的结构和磁性。这些纳米复合材料是通过中等(400 ℃)和高温(560和630 ℃)退火的(Ga,Mn)As层与Mn浓度在0.1和2%之间,生长在270 ℃的分子束外延。对于初始Mn含量为1%和2%的层,在400 ℃的最低退火温度下已经观察到(Ga,Mn)As的分解。在较高温度退火后,观察到直径相似(7 - 10 nm)的立方和六方(Mn,Ga)As纳米晶共存于初始锰含量为0.5%的层中。在0.1 - 10 000 s的时间跨度内的磁化弛豫测量提供的证据的超顺磁性的(Mn,Ga)As纳米晶体,以及没有自旋玻璃动力学。这些发现表明,即使在具有最高纳米密度的层中,纳米晶体之间的耦合也很弱。

英文摘要:

X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by moderate (400C) and high temperature (560 and 630C) annealing of (Ga,Mn)As layers with Mn concentrations between 0.1 and 2%, grown by molecular beam epitaxy at 270oC. Decomposition of (Ga,Mn)As is already observed at the lowest annealing temperature of 400C for layers with initial Mn content of 1% and 2%. Both cubic and hexagonal (Mn,Ga)As nanocrystals, with similar diameters of 7 - 10 nm are observed to coexist in layers with an initial Mn content of 0.5% after higher temperature annealing. Measurements of magnetization relaxation in the time span 0.1 - 10 000 s provide evidence for superparamagnetic properties of the (Mn,Ga)As nanocrystals, as well as for the absence of spin-glass dynamics. These findings point to weak coupling between nanocrystals even in layers with the highest nanocrystal density.

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