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arXiv 1102.3196physics.optics

Design and modeling of a transistor vertical-cavity surface-emitting laser

Wei Shi, Behnam Faraji, Mark Greenberg, Jesper Berggren, Yu Xiang, Mattias Hammar, Michel Lestrade, Zhi-Qiang Li, Z. M. Simon Li, Lukas Chrostowski

英文摘要:

A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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