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arXiv 1102.2215cond-mat.supr-concond-mat.mtrl-scicond-mat.str-el
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三元铁硒化物K $_{0.8}$ Fe $_{1.6}$ Se $_2$是一种反铁磁半导体

Ternary iron selenide K$_{0.8}$Fe$_{1.6}$Se$_2$ is an antiferromagnetic semiconductor

Xun-Wang Yan, Miao Gao, Zhong-Yi LU, Tao Xiang

摘要:

采用第一性原理电子结构计算方法研究了K $_{0.8+x}$ Fe $_{1.6}$ Se $_2$的电子结构和磁性.铁空位有序的KPDMATHABMP Fe $_{1.6}$ Se $_2$的基态被发现是一个准二维块棋盘式反铁磁(AFM)半导体的能隙为594 meV和一个大的有序磁矩为3.37 $μ_B$为每个Fe原子,在良好的协议与中子散射测量。潜在的机制是化学键驱动的四聚体晶格畸变。K $_{0.8+x}$ Fe $_{1.6}$ Se $_2$ with finite $x$是一种掺杂的AFM半导体,具有低导电载流子浓度,其与过量的钾含量近似成比例,定性地与红外观察一致。我们的研究揭示了这些材料中反铁磁性和超导性之间相互作用的重要性。这表明$_{0.8}$ Fe $_{1.6}$ Se $_2$而不是KFe $_2$ Se $_2$应被视为母体化合物,在电子或空穴掺杂时从其出现超导性。

英文摘要:

We have studied electronic and magnetic structures of K$_{0.8+x}$Fe$_{1.6}$Se$_2$ by performing the first-principles electronic structure calculations. The ground state of the Fe-vacancies ordered K$_{0.8}$Fe$_{1.6}$Se$_2$ is found to be a quasi-two-dimensional blocked checkerboard antiferromagnetic (AFM) semiconductor with an energy gap of 594 meV and a large ordering magnetic moment of 3.37 $μ_B$ for each Fe atom, in excellent agreement with the neutron scattering measurement. The underlying mechanism is the chemical-bonding-driven tetramer lattice distortion. K$_{0.8+x}$Fe$_{1.6}$Se$_2$ with finite $x$ is a doped AFM semiconductor with low conducting carrier concentration which is approximately proportional to the excess potassium content, consistent qualitatively with the infrared observation. Our study reveals the importance of the interplay between antiferromagnetism and superconductivity in these materials. This suggests that K$_{0.8}$Fe$_{1.6}$Se$_2$, instead of KFe$_2$Se$_2$, should be regarded as a parent compound from which the superconductivity emerges upon electron or hole doping.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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