Si（001）上低温形成Ge小屋阵列的初始阶段
An initial phase of Ge hut array formation at low temperature on Si(001)
摘要：
本文报道了在360 ℃下，利用STM直接观察到的Ge在Si（001）表面上的成核过程。从约5.1 μ m（~3.6 ML）的覆盖范围开始，在润湿层MxN贴片上观察到金字塔和楔形核。小屋阵列的进一步发展包括在以前出现的集群和新的成核的同时增长，导致小屋数量密度随着表面覆盖率的增加而逐渐上升。小屋成核重建补丁表面从通常的c（4x 2）或p（2x2）结构的两个最近描述的形成由外延取向的Ge二聚体对和四个二聚体链之一。
英文摘要：
We report a direct STM observation of Ge hut array nucleation on the Si(001) surface during ultrahigh vacuum molecular-beam epitaxy at 360C. Nuclei of pyramids and wedges have been observed on the wetting layer MxN patches starting from the coverage of about 5.1 Å (~3.6 ML). Further development of hut arrays consists in simultaneous growth of the formerly appeared clusters and nucleation of new ones resulting in gradual rise of hut number density with increasing surface coverage. Huts nucleate reconstructing the patch surface from the usual c(4x2) or p(2x2) structure to one of two recently described formations composed by epitaxially oriented Ge dimer pairs and chains of four dimers.
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