The Hall effect is investigated in thin-film samples of iron-chalcogenide superconductors in detail. The Hall coefficient (RH) of FeTe and Fe(Se1-xTex) exhibits a similar positive value around 300 K, indicating that the high-temperature normal state is dominated by hole-channel transport. FeTe exhibits a sign reversal from positive to negative across the transition to the low-temperature antiferromagnetic state, indicating the occurrence of drastic reconstruction in the band structure. The mobility analysis using the carrier density theoretically calculated reveals that the mobility of holes is strongly suppressed to zero, and hence the electric transport looks to be dominated by electrons. The Se substitution to Te suppresses the antiferromagnetic long-range order and induces superconductivity instead. The similar mobility analysis for Fe(Se0.4Te0.6) and Fe(Se0.5Te0.5) thin films shows that the mobility of electrons increases with decreasing temperature even in the paramagnetic state, and keeps sufficiently high values down to the superconducting transition temperature. From the comparison between FeTe and Fe(Se1-xTex), it is suggested that the coexistence of 'itinerant' carriers both in electron and hole channels is indispensable for the occurrence of superconductivity.
We have fabricated thin films of FeTe$_{1-x}$Se$_x$ using a scotch-tape method. The superconductivities of the thin films are different from each other although these films were fabricated from the same bulk sample. The result clearly presents the inhomogeneous superconductivity in FeTe$_{1-x}$Se$_x$. The difference comes from inhomogeneity due to the excess Fe concentration. The resistivity of a thin film with low excess Fe shows good superconductivity with the sharp superconducting-transition width and more isotropic superconductivity.
FeTe, a non-superconducting parent compound in the iron-chalcogenide family, becomes superconducting after annealing in oxygen. Under the presence of magnetism, spin-orbit coupling, inhomogeneity and lattice distortion, the nature of its superconductivity is not well understood. Here, we combined mutual inductance technique with magneto transport to study the magnetization and superconductivity of FeTe thin films. We found that the films with the highest Tc showed non-saturating superfluid density and a strong magnetic hysteresis distinct from that in a homogeneous superconductor. Such hystere…
The Hall effect is investigated in detail for nonsuperconducting and superconducting FeTe thin films. The Hall coefficient commonly exhibits a sign reversal from positive in a high-temperature paramagnetic state to negative in a low-temperature antiferromagnetic state. Phenomenological analysis by a simple two-band Drude model indicates that hole mobility is significantly suppressed in the antiferromagnetic state. When suppression of the hole mobility is insufficient, superconductivity shows up in FeTe. This result strongly suggests that the itinerancy in both hole and electron channels is the…
We performed magneto-optical (MO) measurements on FeTe$_{0.5}$Se$_{0.5}$ thin films grown on LaAlO$_3$ (LAO) and Yttria-stabilized zirconia (YSZ) single-crystalline substrates. These thin films show superconducting transition temperature, ${T_c}$ $\sim$ 19 K, 4 K higher than the bulk sample. Typical roof-top patterns can be observed in the MO images of thin films grown on LAO and YSZ, from which a large and homogeneous critical current density, ${J_c}$, over 1 $\times$ 10$^6$ A/cm$^2$ at 5 K was obtained. Magnetic flux penetration measurement reveals that the current is almost isotropically di…
The phenomenon of oxygen incorporation induced superconductivity in iron telluride (Fe1+yTe, with antiferromagnetic (AFM) orders) is intriguing and quite different from the case of FeSe. Until now, the microscopic origin of the induced superconductivity and the role of oxygen are far from clear. Here, by combining in-situ scanning tunneling microscopy/spectroscopy (STM/STS) and x-ray photoemission spectroscopy (XPS) on oxygenated FeTe, we found physically adsorbed O2 molecules crystallized into c(2/3x2) structure as an oxygen overlayer at low temperature, which was vital for superconductivity.…
We report on the local electronic structure of oxygen incorporated FeTe and FeSe films and how this relates to superconductivity observed in these films. In the case of FeTe, intially grown films are measured to be non-superconducting, but become superconducting following oxygen incorporation. In FeSe the opposite happens, initially grown films are measured to be superconducting, but experience a quenching of superconductivity following oxygen incorporation. Total Fluorescence Yield (TFY) X-ray absorption experiments show that oxygen incorporation changes the initial Fe valence state in both t…
We report superconductivity induced in films of the non-superconducting, antiferromagnetic parent material FeTe by low temperature oxygen incorporation in a reversible manner. X-ray absorption shows that oxygen doping changes the nominal Fe valence state from 2+ in the non-superconducting state to mainly 3+ in the superconducting state. Thus superconductivity in O doped FeTe occurs in a quite different charge and strain state than the more common FeTe$_{1-x}$Se$_x$. This work also suggests a convenient path for conducting doping experiments in-situ with many measurement techniques.
Topological superconductor is a timely and frontier topic in condensed matter physics. In superconducting state, an order parameter will be established with the basic or subsidiary symmetry of the crystalline lattice. In doped Bi2Se3 with a basic threefold symmetry, it was predicted however that superconductivity may have a twofold symmetry of odd parity. Here we report the proximity effect induced superconductivity in Bi2Te3 thin film on top of an iron-based superconductor FeTe0.55Se0.45. By using the quasiparticle interference technique, we demonstrate clear evidence of twofold symmetry of t…
Reversible tuning of magnetic order and intrinsic superconductivity in strained FeTe films via stoichiometry control
Beijing Academy of Quantum Information Sciences（北京量子信息科学研究院）；Institute of Physics, Chinese Academy of Sciences（中国科学院物理研究所）；University of Chinese Academy of Sciences（中国科学院大学）；Renmin University of China（中国人民大学）；Shanxi Normal University（山西师范大学）；Tsinghua University（清华大学）
FeTe is known to become a superconductor when doped with oxygen. Using layer by layer growth of single crystal films by molecular beam epitaxy (MBE), we have studied how oxygen incorporates. If oxygen is supplied during growth of a layer, it substitutes for tellurium inhomogeneously in oxygen domains that are not associated with superconductivity. When oxygen is supplied after growth, it diffuses homogeneously into the crystalline film and incorporates interstitially. Only the interstitial oxygen causes superconductivity to emerge. This suggests that the superconductivity observed in this mate…
We report an unusual persistence of superconductivity against high magnetic fields in the iron chalcogenide film FeTe:O$_{x}$ below ~ 2.5 K. Instead of saturating like a mean-field behavior with a single order parameter, the measured low-temperature upper critical field increases progressively, suggesting a large supply of superconducting states accessible via magnetic field or low-energy thermal fluctuations. We demonstrate that superconducting states of finite momenta can be realized within the conventional theory, despite its questionable applicability. Our findings reveal a fundamental cha…
Interface can be a fertile ground for exotic quantum states, including topological superconductivity, Majorana mode, fractal quantum Hall effect, unconventional superconductivity, Mott insulator, etc. Here we grow single-unit-cell (1UC) FeTe film on NbSe2 single crystal by molecular beam epitaxy (MBE) and investigate the film in-situ with home-made cryogenic scanning tunneling microscopy (STM) and non-contact atomic force microscopy (AFM) combined system. We find different stripe-like superlattice modulations on grown FeTe film with different misorientation angles with respect to NbSe2 substra…
We investigate topological properties in the Fe(Te,Se) thin films. We find that the single layer FeTe$_{1-x}$Se$_x$ has nontrivial $Z_2$ topological invariance which originates from the parity exchange at $Γ$ point of Brillouin zone. The nontrivial topology is mainly controlled by the Te(Se) height. Adjusting the height, which can be realized as function of $x$ in FeTe$_{1-x}$Se$_x$, can drive a topological phase transition. In a bulk material, the two dimensional $Z_2$ topology invariance is extended to a strong three-dimensional one. In a thin film, we predict that the topological invariance…
We performed angle-resolved photoemission spectroscopy studies on a series of FeTe$_{1-x}$Se$_{x}$ monolayer films grown on SrTiO$_{3}$. The superconductivity of the films is robust and rather insensitive to the variations of the band position and effective mass caused by the substitution of Se by Te. However, the band gap between the electron- and hole-like bands at the Brillouin zone center decreases towards band inversion and parity exchange, which drive the system to a nontrivial topological state predicted by theoretical calculations. Our results provide a clear experimental indication th…
Superconductivity and vortex structure on Bi$_{2}$Te$_{3}$/FeTe$_{0.55}$Se$_{0.45}$ heterostructures with different thickness of Bi$_{2}$Te$_{3}$ films
We studied flux pinning in exfoliated FeTe$_{0.6}$Se$_{0.4}$ thin-film devices with a thickness $d$ from 30 to 150 nm by measuring the critical current density $J_{\mathrm{c}}$. In bulk FeTe$_{0.6}$Se$_{0.4}$, the flux pinning has been discussed in the framework of weak collective pinning, while there is little knowledge on the pinning mechanism in the thin-film region. From the thickness $d$ dependence of $J_{\mathrm{c}}$ at a fixed magnetic field of 1 T, we found that the strong pinning is dominant below $d \approx 70$ nm, while the weak collective pinning becomes more important above $d \ap…
By realizing in thin films a tensile stress state, superconductivity of 13 K was introduced into FeTe, an non-superconducting parent compound of the iron pnictides and chalcogenides, with transition temperature higher than that of its superconducting isostructural counterpart FeSe. For these tensile stressed films, the superconductivity is accompanied by the softening of the first-order magnetic and structural phase transition; and also, the in-plane extension and out-of-plane contraction are universal in all FeTe films independent of sign of lattice mismatch, either positive or negative. More…
Thickness dependence of diode efficiency in superconducting Fe(Se,Te)/FeTe thin-film heterostructure devices
The University of Osaka（大阪大学）；Institute for Open and Transdisciplinary Research Initiatives, The University of Osaka（大阪大学开放跨学科研究倡议研究所）；Tohoku University（东北大学）
We report a systematic study of anisotropy resistivity, magnetoresistance and Hall effect of Li0.32(NH3)yFe2Te1.2Se0.8 single crystals. When compared to the parent compound FeTe0.6Se0.4, the Li-NH3 intercalation not only increases the superconducting transition temperature, but also enhances the electronic anisotropy in both normal and superconducting states. Moreover, in contrast to the parent compound, the Hall coefficient RH becomes negative at low temperature, indicating electron-type carriers are dominant due to Li doping. On the other hand, the sign reverse of RH at high temperature and …
The discovery of high-temperature superconductivity in Fe-based compounds [1,2] has triggered numerous investigations on the interplay between superconductivity and magnetism [3] and, more recently, on the enhancement of transition temperatures through interface effects [4]. It is widely believed that the emergence of optimal superconductivity is intimately linked to the suppression of long-range antiferromagnetic (AFM) order, although the exact microscopic picture of this relationship remains elusive [1] due to the lack of data with atomic spatial resolution [5-7]. Here, we present a spin-pol…
We investigated the superconducting and transport properties in FeTe$_{1-x}$Se$_{x}$ (0.1 $\leq$ $x$ $\leq$ 0.4) single crystals prepared by O$_2$-annealing. Sharp superconducting transition width observed in magnetization measurement and the small residual resistivity prove the high quality of the crystals. All the crystals manifest large, homogeneous, and isotropic critical current density \emph{J}$_c$ with self-field value over 10$^5$ A/cm$^2$ at 2 K. The large and field-robust critical current densities prove that the superconductivity in FeTe$_{1-x}$Se$_{x}$ (0.1 $\leq$ $x$ $\leq$ 0.4) is…
The influence of tensile strain in the ab-plane on crystal and electronic structure of FeTe has been studied ab initio. In superconducting FeSe the Fermi surface nesting with a vector q~(0.5,0.5)(2π/a) is believed to be crucial for rising superconductivity mediated by spin-fluctuations. The results presented here indicate that tensile-strained FeTe also exhibits such conditions. Furthermore, the Fermi surface changes, related to the increase of the lattice parameter a of this telluride, are opposite to analogous effects reported for FeSe. Since a recently reported transition from the double-st…
Understanding the superconductivity at the interface of FeSe/SrTiO3 is a problem of great contemporary interest due to the significant increase in critical temperature (Tc) compared to that of bulk FeSe, as well as the possibility of an unconventional pairing mechanism and topological superconductivity. We report a study of the influence of a capping layer on superconductivity in thin films of FeSe grown on SrTiO3 using molecular beam epitaxy. We used in vacuo four-probe electrical resistance measurements and ex situ magneto-transport measurements to examine the effect of three capping layers …
Angle-resolved photoemission spectroscopy (ARPES) reveals effects of electron doping, which is realized by Co and Ni substitution for Fe in FeTe$_{1-y}$Se$_{y}$ (y$\sim$0.35) superconductor. The data show consistent band shifts as well as expansion and shrinking of electron and hole Fermi surface, respectively. Doping of either element leads to a Lifshitz transition realized as a removal of one or two hole pockets. This explains qualitatively a complex behavior of Hall coefficient observed before [Bezusyy, et al., Phys. Rev. B 91, 100502 (2015)], including change of sign with doping, which tak…
We prepared single unit cell FeSe films on GaO$_{2-δ}$ terminated perovskite NdGaO$_{3}$(110) substrates and performed ex situ transport and scanning transmission electron microscopy measurements on the FeTe protected films. Our experimental measurements showed that the single unit cell FeSe films interfaced with GaO$_{2-δ}$ layer are electron doped via interface charge transfer. Most importantly, this type of heterostructure can host interface enhanced superconductivity with an onset temperature of about 28 K, which is much higher than the value of 8 K in bulk FeSe. Our work indicates that Fe…
We report high temperature superconductivity in one unit-cell (1-UC) FeSe films grown on STO(110) substrate by molecular beam epitaxy. By in-situ scanning tunneling spectroscopy measurement, we observed a superconducting gap as large as 17 meV. Transport measurements on 1-UC FeSe/STO(110) capped with FeTe layers reveal superconductivity with an onset TC of 31.6 K and an upper critical magnetic field of 30.2 T. We also find that the TC can be further increased by an external electric field, but the effect is smaller than that on STO(001) substrate. The study points out the important roles of in…
Near the superconducting phase transition, fluctuations significantly modify the electronic transport properties. Here we study the fluctuation corrections to the Hall conductivity in disordered films, extending previous derivations to a broader range of temperatures and magnetic fields, including the vicinity of the magnetic field induced quantum critical point. In the process, we found a new contribution to the Hall conductivity that was not considered before. Recently, our theory has been used to fit measurements of the Hall resistance in amorphous TaN films.
The sign change in the Hall conductivity has been studied in thin amorphous Nb$_{1-x}$Ge$_x (x\approx$0.3) films. By changing the film thickness it is shown that the field at which the sign reversal occurs shifts to lower values (from above to below the mean-field transition field $H_{c2}$) with increasing film thickness. This effect can be understood in terms of a competition between a positive normal and a negative fluctuation contribution to the Hall conductivity.
We have studied the Hall effect in superconducting tantalum nitride films. We find a large contribution to the Hall conductivity near the superconducting transition, which we can track to temperatures well above $T_c$ and magnetic fields well above the upper critical field, $\text{\text{H}}_{c2}(0)$. This contribution arises from Aslamazov-Larkin superconducting fluctuations, and we find quantitative agreement between our data and recent theoretical analysis based on time dependent Ginzburg-Landau theory.
Longitudinal electric field of a surface acoustic wave (SAW) drags vortex structure of a superconductive film, deposited on a piezoelectric substrate, and generates longitudinal DC component of an acoustoelectric field, which does not depend on direction of an external magnetic field. The contra-directional vortices are dragged by SAW in opposite directions. This phenomenon represents an acoustic analog of Hall effect, where vortices are an analog of current carriers, and the SAW Pointing vector acts as an impressed electric field. The calculation of the acoustoelectric field for a YBCO film w…
The interplay between vortex guiding and the Hall effect in superconducting Nb films with periodically arranged nanogrooves is studied via four-probe measurements in standard and Hall configurations and accompanying theoretical modeling. The nanogrooves are milled by focused ion beam and induce a symmetric pinning potential of the washboard type. The resistivity tensor of the films is determined in the limit of small current densities at temperatures close to the critical temperature for the fundamental matching configuration of the vortex lattice with respect to the pinning nanolandscape. The…
Measurements of the Hall effect and the resistivity in twinned YBa2Cu3O7-delta thin films in magnetic fields B oriented parallel to the crystallographic c-axis and to the twin boundaries reveal a double sign reversal of the Hall coefficient for B below 1 T. In high transport current densities, or with B tilted off the twin boundaries by 5 degrees, the second sign reversal vanishes. The power-law scaling of the Hall conductivity to the longitudinal conductivity in the mixed state is strongly modified in the regime of the second sign reversal. Our observations are interpreted as strong, disorder…
The magnetic-field dependencies of the longitudinal and Hall resistivity of the electron-doped compounds $Nd_{2-x}Ce_xCuO_{4+δ}$ in underdoped region (x=0.14) were investigated. It was established experimentally a strong magnetic field dependence of the Hall conductivity, $σ_{xy}(B)=C-b/B$, in the region of magnetic fields corresponding to a transition from superconducting to resistive state. The observed feature can be explained with the sum of contributions of the quasiparticles and moving Abrikosov vortices into Hall effect in a mixed state of type-II superconductor.
Superconducting compounds of the family Hg-Ba-Ca-Cu-O have been the subject of intense study since the current record-holder for the highest critical temperature of a superconductor belongs to this class of materials. Thin films of the compound with two adjacent copper-oxide layers and a critical temperature of about 120 K were prepared by a two-step process that consists of the pulsed-laser deposition of precursor films and the subsequent annealing in mercury-vapor atmosphere. Like some other high-temperature superconductors, Hg-Ba-Ca-Cu-O exhibits a specific anomaly of the Hall effect, a dou…
We report resistivity, Hall coefficient, current-voltage characteristics, and magneto-optical imaging measurements of epitaxial Co-doped BaFe_{2}As_{2} thin films deposited on MgO(001) substrate. The Hall resistivity of the films has a substantial contribution arising from anomalous Hall effect of ferromagnetic components. The critical current density (J_{c}) of the films is ~2 MA/cm^{2} at low temperatures. Differential magneto-optical images of the remanent state give similar J_{c} values and also exhibit presence of extended defects in the film.
We report on measurements of the resistivity and Hall coefficient in underdoped GdBa2Cu3O7-d epitaxial thin films grown by off-axis magnetron sputtering. The films have been lithographically patterned allowing precise measurements of the temperature dependencies of the inverse Hall constant RH-1 and of the Hall angle theta_H. We find that RH-1 is linear in temperature between 300K and the pseudogap temperature T*, whereas cot(theta_H) displays a perfect T2 temperature dependence between typically 300 and 100K. We observe for all the samples that the temperature at which the temperature depende…
We have measured the longitudinal resistivity and the Hall resistivity in the ab-plane of highly c-axis-oriented MgB2 thin films. In the normal state, the Hall coefficient (R_H) behaves as R_H ~ T with increasing temperature (T) up to 130 K and then deviates from that linear T-dependence at higher temperatures. The T^2 dependence of the cotangent of the Hall angle is only observed above 130 K. The mixed-state Hall effect reveals no sign anomaly over a wide range of current densities from 10^2 to 10^4 A/cm^2 and for magnetic fields up to 5 T.
The resistivity and the Hall effect in the copper-oxide high-temperature superconductor YBa$_{2}$Cu$_{3}$O$_{7-δ}$ (YBCO) are remarkably anisotropic. Using a thin film of YBCO grown on an off-axis cut SrTiO$_3$ substrate allows one to investigate these anisotropic transport properties in a planar and well-defined sample geometry employing a homogeneous current density. In the normal state, the Hall voltage probed parallel to the copper-oxide layers is positive and strongly temperature dependent, whereas the out-of-plane Hall voltage is negative and almost temperature independent. The results c…
We have measured the magnetotransport properties and Hall effect of a series of epitaxial NbN films grown on (100) oriented single crystalline MgO substrate under different conditions using reactive magnetron sputtering. Hall effect measurements reveal that the carrier density in NbN thin films is sensitive to the growth condition. The carrier density increases by a factor of 3 between the film with highest normal state resistivity (rho_n~3.83micro-Ohm-m) and lowest transition temperature (Tc~9.99K) and the film with lowest normal state resistivity (rho_n~0.94micro-Ohm-m) and highest transitio…
We have epitaxially grown c-axis oriented SrxLa1-xCuO2 thin films by rf sputtering on KTaO3 substrates with x = 0.12. The as-grown deposits are insulating and a series of superconducting films with various Tc(R=0) up to 26 K have been obtained by in-situ oxygen reduction. Transport measurements in the ab plane of these samples have been undertaken. We report original results on the temperature dependence of the Hall effect and on the anisotropic magnetoresistance (T > Tc). We discuss the magnitude of upper critical fields and anisotropy, the Hall effect, which presents changes of sign indicati…
The transport properties of La$_{1.89}$Ce$_{0.11}$CuO$_{4}$(LCCO) and La$_{1.89}$Ce$_{0.11}$(Cu$_{0.99}$Co$_{0.01}$)O$_{4}$ (LCCO:Co) superconducting thin films are investigated. When the external field $\bf H$ is applied along the crystallographic c-axis, a double sign reversal of the Hall voltage in the mixed state of LCCO:Co thin films is observed whereas a single sign reversal is detected in LCCO. A double sign reversal of the Hall signal in LCCO can be recovered if the magnetic field is tilted away from the plane of the film. We find that the transition from one to two of the Hall sign re…
We report the temperature dependence of resistivity (rho) and Hall coefficient (R_H) in the normal state of homogeneously disordered epitaxial NbN thin films with kFl~3.27-10.12. The superconducting transition temperature (Tc) of these films varies from 8.13K to 16.8K. While our least disordered film displays usual metallic behavior, for all the films with kFl<8.13, both and are negative up to 300K. We observe that R_H(T) varies linearly with rho(T) for all the films. Measurements performed on a 2nm thick Be film shows similar behavior >. This behavior is inconsistent with existing theories of…
