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arXiv 1101.1600cond-mat.mtrl-sci
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(Ga,Mn)As铁磁半导体中空洞和富Mn夹杂的透射电镜研究

Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy

A. Kovacs, J. Sadowski, T. Kasama, J. Domagala, R. Mathieu, T. Dietl, 5, R. E. Dunin-Borkowski

摘要:

空隙相邻的立方(ZnS型)和六方(NiAs型)Mn丰富的纳米晶体的特征在于使用像差校正的透射电子显微镜退火Ga 0.995Mn 0.005 As磁性半导体样品的分子束外延生长。纳米束电子衍射测量表明,纳米晶体的晶格参数表现出偏离散装锰砷。原位退火内的电子显微镜是用来研究成核,聚结,和晶粒生长的个别纳米晶体。在903 K退火后,样品的磁转变温度可能是由立方铁磁纳米晶体的存在下占主导地位。

英文摘要:

Voids adjacent to both cubic (ZnS-type) and hexagonal (NiAs-type) Mn-rich nanocrystals are characterized using aberration-corrected transmission electron microscopy in annealed Ga0.995Mn0.005As magnetic semiconductor specimen grown by molecular beam epitaxy. Nano-beam electron diffraction measurements suggest that the nanocrystals exhibit deviations in lattice parameter from that of bulk MnAs. In situ annealing inside the electron microscope is used to study the nucleation, coalescence, and grain growth of individual nanocrystals. After annealing at 903 K, the magnetic transition temperature of the specimen likely to be dominated by the presence of cubic ferromagnetic nanocrystals.

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