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arXiv 1307.7871cond-mat.mtrl-sci
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(Ga,Fe)N薄膜中Fe-N纳米晶和含氮夹杂物的透射电镜表征

Characterization of Fe-N nano crystals and nitrogen-containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy

A. Kovacs, B. Schaffer, M. S. Moreno, J. R. Jinschek, A. J. Craven, T. Dietl, A. Bonanni, R. E. Dunin-Borkowski

摘要:

纳米夹杂物填充氮,位于相邻的FenN(n = 3或4)纳米晶体内(Ga,Fe)N层,确定和其特征在于使用扫描透射电子显微镜(STEM)和电子能量损失谱(EELS)。高分辨率的STEM图像揭示了截断的Fe-N纳米晶体在其边界与含氮夹杂物。在电子显微镜上进行了可控电子束钻孔实验,在原位释放夹杂物中的氮气。单个夹杂物中氮的密度测得为1.4 ± 0.3 g/cm 3。这些观察结果为(Ga,Fe)N层中过剩氮的位置提供了解释,该过剩氮在生长期间通过FenN(n> 1)纳米晶体的成核而释放。

英文摘要:

Nanometric inclusions filled with nitrogen, located adjacent to FenN (n = 3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusion. A controlled electron beam hole drilling experiment is used to release nitrogen gas from an inclusion in situ in the electron microscope. The density of nitrogen in an individual inclusion is measured to be 1.4 +- 0.3 g/cm3. These observations provide an explanation for the location of surplus nitrogen in the (Ga,Fe)N layers, which is liberated by the nucleation of FenN (n> 1) nanocrystals during growth.

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