We perform a systematic study of incoherent transport in the high temperature crossover region of the half-filled one-band Hubbard model. We demonstrate that the family of resistivity curves displays characteristic quantum critical scaling of the form $ρ(δU,T)=ρ_{c}(T)f(T/T_{o}(δU))$, with $T_{o}(δU)\simδU^{zν}$, and $ρ_{c}(T)\sim T$. The corresponding $β$-function displays a "strong coupling" form $β\sim\ln(ρ_{c}/ρ)$, reflecting the peculiar mirror symmetry of the scaling curves. This behavior, which is surprisingly similar to some experimental findings, indicates that Mott quantum criticality may be acting as the fundamental mechanism behind the unusual transport phenomena in many systems near the metal-insulator transition.
We study electric transport near the Mott metal-insulator transition in a triangular-lattice Hubbard model at half filling. We calculate optical conductivity $σ(ω)$ based on a cellular dynamical mean field theory including vertex corrections inside the cluster. Near the Mott critical end point, a Drude analysis in the metallic region suggests that the change in the Drude weight is important rather than that in the transport scattering rate for the Mott transition. In the insulating region, there emerges an "ingap" peak in $σ(ω)$ at low $ω$ near the Mott transition, and this smoothly connects t…
To search for novel spin-charge coupled phenomena in the strongly correlated electron system on a frustration lattice, charge transport and dynamics have been investigated for the hole-doped spin-glass (Mott) insulator (Y$_{1-x}$Cd$_{x}$)$_{2}$Mo$_{2}$O$_{7}$ with pyrochlore structure. Coincident with the disappearance of spin-glass state by hole doping, a diffusive metallic transport with strongly renormalized electron mass shows up with no long range spin order, which is caused by strong antiferromagnetic spin fluctuation due to the geometrical frustration.
We show how a lightly doped Mott insulator has hugely enhanced electronic thermal transport at low temperature. It displays universal behavior independent of the interaction strength when the carriers can be treated as nondegenerate fermions and a nonuniversal "crossover" region where the Lorenz number grows to large values, while still maintaining a large thermoelectric figure-of-merit. The electron dynamics are described by the Falicov-Kimball model which is solved for arbitrary large on-site correlation with a dynamical mean-field theory algorithm on a Bethe lattice. We show how these resul…
We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak in the optical conductivity persists even at temperatures when the resistivity is well beyond the semiclassical Mott-Ioffe-Regel limit. Local random potential does not introduce new charge carriers, but it induces effective local carrier doping and broadens the bandwidth. This makes the system more metallic, in agreement with the recent experiments on X-ray…
We present a theory of the DC electron transport in insulators near Anderson-Mott transitions under the influence of coexisting electron correlation and randomness. At sufficiently low temperatures, the DC electron transport in Anderson-Mott insulators is determined by the single-particle density of states (DOS) near the Fermi energy. Anderson insulators, caused by randomness, are characterized by a nonzero DOS at the Fermi energy. However, recently, the authors proposed that coexisting randomness and short-ranged interaction in insulators open a soft Hubbard gap in the DOS, and the DOS vanish…
Electron-electron scattering usually dominates the transport in strongly correlated materials. It typically leads to pronounced resistivity maxima in the incoherent regime around the coherence temperature $T^{*}$, reflecting the tendency of carriers to undergo Mott localization following the demise of the Fermi liquid. This behavior is best pronounced in the vicinity of interaction-driven (Mott-like) metal-insulator transitions, where the $T^{*}$ decreases, while the resistivity maximum $ρ_{max}$ increases. Here we show that, in this regime, the entire family of resistivity curves displays a c…
Electric field effect (EFE) controlled magnetoelectric transport in thin films of undoped and La-doped Sr$_{2}$IrO$_{4}$ (SIO) were investigated under the action of ionic liquid gating. Despite large carrier density modulation, the temperature dependent resistance measurements exhibit insulating behavior in chemically and EFE doped samples with the band filling up to 10\%. The ambipolar transport across the Mott gap is demonstrated by EFE tuning of the activation energy. Further, we observe a crossover from a negative magnetoresistance (MR) at high temperatures to positive MR at low temperatur…
We calculate the non-equilibrium electronic transport properties of a one-dimensional interacting chain at half filling, coupled to non-interacting leads. The interacting chain is initially in a Mott insulator state that is driven out of equilibrium by applying a strong bias voltage between the leads. For bias voltages above a certain threshold we observe the breakdown of the Mott insulator state and the establishment of a steady-state electronic current through the system. Based on extensive time-dependent density matrix renormalization group simulations, we show that this steady-state curren…
We study the interplay between Mott physics, driven by Coulomb repulsion U, and Hund physics, driven by Hund's coupling J, for a minimal model for Hund metals, the orbital-symmetric three-band Hubbard-Hund model (3HHM) for a lattice filling of 1/3. Hund-correlated metals are characterized by spin-orbital separation (SOS), a Hund's-rule-induced two-stage Kondo-type screening process, in which spin screening occurs at much lower energy scales than orbital screening. By contrast, in Mott-correlated metals, lying close to the phase boundary of a metal-insulator transition, the SOS window becomes n…
We have investigated the temperature evolution of magnetism and its interrelation with structural parameters in perovskite-based layered compound Sr$_2$IrO$_4$, which is believed to be a $J_{eff}$ = 1/2 Mott insulator. The structural distortion plays an important role in this material which induces a weak ferromagnetism in otherwise antiferromagnetically ordered magnetic state with transition temperature around 240 K. Interestingly, at low temperature below around 100 K, a change in magnetic moment has been observed. Temperature dependent x-ray diffraction measurements show sudden changes in s…
We present a theory for charge and heat transport parallel to the interfaces of a multilayer (ML) in which the interfacing gives rise the redistribution of the electronic charges. The ensuing electrical field couples self-consistently to the itinerant electrons, so that the properties of the ML crucially depend on an interplay between the on-site Coulomb forces and the long range electrostatic forces. The ML is described by the Falicov-Kimball model and the self-consistent solution is obtained by iterating simultaneously the DMFT and the Poisson equations. This yields the reconstructed charge …
We address the role played by charged defects in doped Mott insulators with active orbital degrees of freedom. It is observed that defects feature a rather complex and rich physics, which is well captured by a degenerate Hubbard model extended by terms that describe crystal-field splittings and orbital-lattice coupling, as well as by terms generated by defects such as the Coulomb potential terms that act both on doped holes and on electrons within occupied orbitals at undoped sites. We show that the multiplet structure of the excited states generated in such systems by strong electron interact…
An influence of the localization of itinerant electrons induced by correlated hopping on the electronic charge and heat transport is discussed for the lightly doped Mott insulator phase of the Falicov-Kimball model. The case of strongly reduced hopping amplitude between the sites with occupied f-electron levels, when an additional band of localized d-electron states could appear on the DOS in the Mott gap, is considered. Due to the electron-hole asymmetry and anomalous features on the DOS and transport function induced by correlated hopping, a strong enhancement of the Seebeck coefficient is o…
We study transport properties of the half-filled two-dimensional (2D) Hubbard model with spatially varying interactions, where a pattern of interacting and non-interacting sites is formed. We use Determinantal Quantum Monte Carlo method to calculate the double occupation, effective hopping and Drude weight. These data point to two phase transitions, driven by fermionic correlations. The first is the expected metal to a Mott insulating state. The second one, is an exotic transition from a Mott insulating state to a highly anisotropic metal, that takes place at large values of the fermion-fermio…
We report a systematic investigation on the high-temperature thermoelectric response in a typical filling-control Mott transition system La1-xSrxVO3. In the vicinity of the Mott transition, incoherent charge transport appears with increasing temperature and the thermopower undergoes two essential crossovers, asymptotically approaching the limit values expected from the entropy consideration, as known as Heikes formula. By comparison with the results of the dynamical mean field theory, we show that the thermopower in the Mott critical state mainly measures the entropy per charge carrier that de…
The surprisingly low current density required for inducing the insulator to metal transition has made Ca$_2$RuO$_4$ an attractive candidate material for developing Mott-based electronics devices. The mechanism driving the resistive switching, however, remains a controversial topic in the field of strongly correlated electron systems. Here we probe an uncovered region of phase space by studying high-purity Ca$_2$RuO$_4$ single crystals, using the sample size as principal tuning parameter. Upon reducing the crystal size, we find a four orders of magnitude increase in the current density required…
We establish the nonequilibrium thermal phases of a voltage driven antiferromagnetic Mott insulator in three dimensions, realised at steady state under a voltage bias. Starting from the Keldysh action for the half filled Hubbard model we derive an effective Langevin equation for the `slow' magnetic variables. The coupling of electrons to these degrees of freedom determine the transport properties. At low temperature we find a voltage-driven discontinuous insulator-metal transition, along with hysteresis. We map the suppression of the Néel temperature $T_N$ and pseudogap temperature $T_{pg}$ wi…
Magnetic structures of organic Mott insulators X[Pd(dmit)2]2 (X=Me4P, Me4Sb), of which electronic states are located near quantum spin liquid (X=EtMe3Sb), are demonstrated by 13C NMR. Antiferromagnetic spectra and nuclear relaxations show two distinct magnetic moments within each Pd(dmit)2 molecule, which cannot be described by single band dimer-Mott model and requires intramolecular electronic correlation. This unconventional fragmentation of S = 1/2 electron spin with strong quantum fluctuation is presumably caused by nearly degenerated intramolecular multiple orbitals, and shares a notion o…
Dynamics of magnetic moments near the Mott metal-insulator transition is investigated by a combined slave-rotor and Dynamical Mean-Field Theory solution of the Hubbard model with additional fully-frustrated random Heisenberg couplings. In the paramagnetic Mott state, the spinon decomposition allows to generate a Sachdev-Ye spin liquid in place of the collection of independent local moments that typically occurs in the absence of magnetic correlations. Cooling down into the spin-liquid phase, the onset of deviations from pure Curie behavior in the spin susceptibility is found to be correlated t…
We study the thermoelectric effect of two-dimensional metals on a square lattice within semiclassical Boltzmann transport theory with particular focus on electron-electron scattering. We compute the electrical conductivity and the Seebeck coefficient as a function of band filling and temperature for generically chosen hopping parameters in a two-dimensional tight-binding model. The Boltzmann equation is solved numerically after computing the full collision integral, taking the angular and radial degrees of freedom into account. These degrees of freedom of the collision integral, neglected in t…
We investigate by means of the time-dependent Gutzwiller approximation the transport properties of a strongly-correlated slab subject to Hubbard repulsion and connected with to two metallic leads kept at a different electrochemical potential. We focus on the real-time evolution of the electronic properties after the slab is connected to the leads and consider both metallic and Mott insulating slabs. When the correlated slab is metallic, the system relaxes to a steady-state that sustains a finite current. The zero-bias conductance is finite and independent of the degree of correlations within t…
Frustrated Mott insulators such as transition metal dichalcogenides present an ideal platform for the experimental realization of externally tuned insulator-metal transition. In this paper, we present the first nonperturbative numerical investigation of the disorder-induced insulator-metal transition in a two-dimensional frustrated Mott insulator. Our approach is generic and captures the essential physics of Mott insulator-metal transition in geometrically frustrated lattices. For concreteness, we have compared our results with the experimental observations on copper (Cu) intercalated 1T-TaS2.…
We investigate the dynamics of correlated charge carriers in the vicinity of the Mott metal-to-insulator transition in various of the title quasi-two-dimensional organic charge-transfer salts by means of fluctuation (noise) spectroscopy. The observed $1/f$-type fluctuations are quantitatively very well described by a phenomenological model based on the concept of non-exponetial kinetics. The main result is a correlation-induced enhancement of the fluctuations accompanied by a substantial shift of spectral weight to low frequencies close to the Mott critical endpoint. This sudden slowing down o…
We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator $κ$-(BEDT-TTF)$_2$CuN(CN)$_2$Cl ($κ$-Cl).The FET shows a continuous metal$-$insulator transition (MIT) as electrostatic doping proceeds. The phase transition appears to involve two-step crossovers, one in Hall measurement and the other in conductivity measurement. The crossover in conductivity occurs around the conductance quantum $e^2/h$ , and hence is not associated with …
Strongly correlated materials are expected to feature unconventional transport properties, such that charge, spin, and heat conduction are potentially independent probes of the dynamics. In contrast to charge transport, the measurement of spin transport in such materials is highly challenging. We observed spin conduction and diffusion in a system of ultracold fermionic atoms that realizes the half-filled Fermi-Hubbard model. For strong interactions, spin diffusion is driven by super-exchange and doublon-hole-assisted tunneling, and strongly violates the quantum limit of charge diffusion. The t…
We discuss the universal transport signatures near a zero-temperature continuous Mott transition between a Fermi liquid (FL) and a quantum spin liquid in two spatial dimensions. The correlation-driven transition occurs at fixed filling and involves fractionalization of the electron: upon entering the spin liquid, a Fermi surface of neutral spinons coupled to an internal gauge field emerges. We present a controlled calculation of the value of the zero temperature universal resistivity jump predicted to occur at the transition. More generally, the behavior of the universal scaling function that …
We investigate the double layered Sr$_{3}$(Ru$_{1-x}$Mn$_{x}$)$_{2}$O$_{7}$ and its doping-induced quantum phase transition (QPT) from a metal to an antiferromagnetic (AFM) Mott insulator. Using spectroscopic imaging with the scanning tunneling microscope (STM), we visualize the evolution of the electronic states in real- and momentum-space. We find a partial-gap in the tunneling density of states at the Fermi energy (E$_{F}$) that develops with doping to form a weak Mott insulating (Δ ~ 100meV) state. Near the QPT, we discover a spatial electronic reorganization into a commensurate checkerboa…
A heterostructure of a semi-infinite metal and a Mott insulator is considered. It is supposed that both materials have an identical lattice spacing and hopping integrals and differ in the Hubbard repulsion which is negligible in the metal and exceeds the critical value for the Mott transition in the insulator. At half-filling and for low temperatures the insulator has the long-range antiferromagnetic order. Its low-lying elementary excitations are standing spin waves and a spin-wave mode which is localized near the interface and has a two-dimensional dispersion. This mode ejects bulk modes fro…
We study the non-equilibrium dynamics of a simple model for V2O3 that consists of a quarter-filled Hubbard model for two orbitals that are split by a weak crystal field. Peculiarities of this model are: (1) a Mott insulator whose gap corresponds to transferring an electron from the occupied lower orbital to the empty upper one, rather than from the lower to the upper Hubbard sub-bands; (2) a Mott transition generically of first order even at zero temperature. We simulate by means of time-dependent Gutzwiller approximation the evolution within the insulating phase of an initial state endowed by…
We investigate topological transport in a spin-orbit coupled bosonic Mott insulator. We show that interactions can lead to anomalous quasi-particle dynamics even when the spin-orbit coupling is abelian. To illustrate the latter, we consider the spin-orbit coupling realized in the experiment of Lin \textit{et al}. [Nature (London) \textbf{471}, 83 (2011)]. For this spin-orbit coupling, we compute the quasiparticle dispersions and spectral weights, the interaction-induced momentum space Berry curvature, and the momentum space distribution of spin density, and propose experimental signatures. Fur…
