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arXiv 1012.5424cond-mat.mtrl-sci
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垂直和平行电场对PbTiO_3中180 ^o铁电畴壁的影响

Effect of External Normal and Parallel Electric Fields on 180^o Ferroelectric Domain Walls in PbTiO_3

Arzhang Angoshtari, Arash Yavari

摘要:

我们在PbTiO 3中施加平行于180 °铁电畴壁和垂直于180 °铁电畴壁的均匀电场,并使用非简谐晶格静力学方法获得平衡结构。除了钛为中心和铅为中心的完美畴壁,我们还考虑了钛为中心的畴壁与氧空位。我们观察到电场可以显著增加畴壁的厚度。我们还观察到,增加电场的大小,我们达到一个临界电场E^c;当E > E^c时,没有局部平衡组态。因此,E^c可以被认为是畴壁运动的阈值场E_h的估计。计算结果表明,氧空位使E^c值减小.由于缺陷畴壁比完美畴壁厚,这一结果与最近的实验观察和连续计算结果一致,即较厚的畴壁具有较低的阈值场。

英文摘要:

We impose uniform electric fields both parallel and normal to 180^o ferroelectric domain walls in PbTiO_3 and obtain the equilibrium structures using the method of anharmonic lattice statics. In addition to Ti-centered and Pb-centered perfect domain walls, we also consider Ti-centered domain walls with oxygen vacancies. We observe that electric field can increase the thickness of the domain wall considerably. We also observe that increasing the magnitude of electric field we reach a critical electric field E^c; for E > E^c there is no local equilibrium configuration. Therefore, E^c can be considered as an estimate of the threshold field E_h for domain wall motion. Our numerical results show that Oxygen vacancies decrease the value of E^c. As the defective domain walls are thicker than perfect walls, this result is in agreement with the recent experimental observations and continuum calculations that show thicker domain walls have lower threshold fields.

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