热退火对气溶胶沉积0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3厚膜介电与铁电性能的影响
Effect of thermal annealing on dielectric and ferroelectric properties of aerosol-deposited $0.65\text{Pb}(\text{Mg}_{1/3}\text{Nb}_{2/3})\text{O}_{3}-0.35\text{PbTiO}_{3}$ thick films
AI总结：
本文研究500 °C热退火对气溶胶沉积PMN-PT厚膜铁电与介电性能的影响，通过PUND和阻抗谱结合Rayleigh分析发现退火使极化开关与非开关贡献分别提高1.6倍和2.33倍，畴壁介电贡献提高11倍，表明退火通过增加畴壁密度增强铁电行为。
摘要：
本文采用两种互补方法，在高、低外加电场下研究了500 °C热退火对沉积在不锈钢基底上的气溶胶沉积0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3厚膜的影响。第一种方法是正上负下（Positive Up Negative Down）方法，该方法使我们能够获得极化中开关贡献和非开关贡献的信息。结果表明，沉积态薄膜在退火前即具有铁电性，因为其极化存在开关贡献。退火后，极化的开关贡献和非开关贡献分别增加了1.6倍和2.33倍，表明铁电行为增强。第二种方法基于阻抗谱并结合Rayleigh分析。结果表明，沉积后热退火使可逆畴壁对介电常数的贡献增加了11倍，同时阈值电场保持相近。这表明退火后畴壁密度增大，而畴壁迁移率基本不变。这两种互补的表征方法表明，退火通过增加畴壁密度增强了厚膜的铁电行为，其影响在极化-电场回线和介电常数上均可见。
英文摘要：
In this work, the effects of thermal annealing at 500 °C on aerosol-deposited $0.65\text{Pb}(\text{Mg}_{1/3}\text{Nb}_{2/3})\text{O}_{3}-0.35\text{PbTiO}_{3}$ thick films on stainless-steel substrates are investigated using two complementary methods at high and low applied external electric fields. The first one is Positive Up Negative Down method, which allows us to obtain information about the switching and non-switching contributions to the polarization. It shows that the as-deposited film is ferroelectric before annealing, since it has a switching contribution to the polarization. After annealing, both the switching and non-switching contributions to polarization increased by a factor of 1.6 and 2.33, respectively, indicating stronger ferroelectric behavior. The second method is based on impedance spectroscopy coupled with Rayleigh analysis. The results show that post-deposition thermal annealing increases the reversible domain wall contribution to the dielectric permittivity by a factor 11 while keeping the threshold field similar. This indicates, after annealing, domain wall density is larger while domain wall mobility remains similar. These two complementary characterization methods show that annealing increases the ferroelectric behavior of the thick film by increasing the domain wall density and its influence is visible both on polarization versus electric field loop and dielectric permittivity.
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