We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicron gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.
Vertical heterostructures of van der Waals materials enable new pathways to tune charge and energy transport characteristics in nanoscale systems. We propose that graphene Schottky junctions can host a special kind of photoresponse which is characterized by strongly coupled heat and charge flows that run vertically out of the graphene plane. This regime can be accessed when vertical energy transport mediated by thermionic emission of hot carriers overwhelms electron-lattice cooling as well as lateral diffusive energy transport. As such, the power pumped into the system is efficiently extracted…
MoS2 monolayers exhibit excellent light absorption and large thermoelectric power, which are, however, accompanied with very strong exciton binding energy - resulting in complex photoresponse characteristics. We study the electrical response to scanning photo-excitation on MoS2 monolayer (1L) and bilayer (2L) devices, and also on monolayer/bilayer (1L/2L) planar heterojunction and monolayer/few-layer/multi-layer (1L/FL/ML) planar double heterojunction devices to unveil the intrinsic mechanisms responsible for photocurrent generation in these materials and junctions. Strong photoresponse modula…
Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz Frequencies
National University of Singapore（新加坡国立大学）；Institute for Functional Intelligent Materials, National University of Singapore（新加坡国立大学功能智能材料研究所）；Moscow Pedagogical State University（莫斯科师范大学）；Center for Neurophysics and Neuromorphic Technologies（神经物理与类脑技术中心）
The design of efficient graphene-silicon (GSi) Schottky junction photodetectors requires detailed understanding of the spatial origin of the photoresponse. Scanning-photocurrent-microscopy (SPM) studies have been carried out in the visible wavelengths regions only, in which the response due to silicon is dominant. Here we present comparative SPM studies in the visible ($λ$ = 633nm) and infrared ($λ$ = 1550nm) wavelength regions for a number of GSi Schottky junction photodetector architectures, revealing the photoresponse mechanisms for silicon and graphene dominated responses, respectively, an…
Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to graphene$'$s superior electron mobility. Previously it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage and therefore it was found to be difficult to disentangle these contributions in the previous studies. In this letter, we report on combined exper…
Graphene is a new material showing high promise in optoelectronics, photonics, and energy-harvesting applications. However, the underlying physical mechanism of optoelectronic response has not been established. Here, we report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong …
Although the detection of light at terahertz (THz) frequencies is important for a large range of applications, current detectors typically have several disadvantages in terms of sensitivity, speed, operating temperature, and spectral range. Here, we use graphene as a photoactive material to overcome all of these limitations in one device. We introduce a novel detector for terahertz radiation that exploits the photothermoelectric (PTE) effect, based on a design that employs a dual-gated, dipolar antenna with a gap of 100 nm. This narrow-gap antenna simultaneously creates a pn junction in a grap…
Graphene is a promising candidate for optoelectronic applications such as photodetectors, terahertz imagers, and plasmonic devices. The origin of photoresponse in graphene junctions has been studied extensively and is attributed to either thermoelectric or photovoltaic effects. In addition, hot carrier transport and carrier multiplication are thought to play an important role. Here we report the intrinsic photoresponse in biased but otherwise homogeneous graphene. In this classic photoconductivity experiment, the thermoelectric effects are insignificant. Instead, the photovoltaic and a photo-i…
This paper is devoted to photocarrier transport across a two-dimensional graphene-semiconductor Schottky junction. We study linear response to monochromatic light with excitation energy well below the semiconductor band gap. The operation mechanism relies on both photoelectric and thermionic emission from graphene to a two-dimensional semiconductor under continuous illumination and zero bias. Due to the thermalization bottleneck for low-energy carriers in graphene, the photoelectric contribution is found to dominate the photoresponse at near-infrared excitation frequencies and below. The exten…
Confined nanoscale spaces, electric fields and tunneling currents make the molecular electronic junction an experimental device for the discovery of new, out-of-equilibrium chemical reactions. Reaction-rate theory for current-activated chemical reactions is developed by combining a Keldysh nonequilibrium Green's functions treatment of electrons, Fokker-Planck description of the reaction coordinate, and Kramers' first-passage time calculations. The NEGF provide an adiabatic potential as well as a diffusion coefficient and temperature with local dependence on the reaction coordinate. Van Kampen'…
Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe unveil high sensitivity and tunable responsivity to visible light. However, the device yield and the repeatability call for a further improvement of the 2D materials to render large-scale uniformity. Here we report a layer-by-layer growth of wafer-scale GaTe with a hole mobility of 28.4 cm2/Vs by molec…
Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV (bulk) to 2.0 eV (single-layer). Therefore, black phosphorus is an appealing candidate for tunable photodetection from the visible to the infrared part of the spectrum. We study the photoresponse of field-effect transistors (FETs) made of few-layer black phosphorus (3 nm to 8 nm thick), as a function of excitation wavelength, power and frequency. In the dark …
We observed qualitatively dissimilar frequency dependence of negative capacitive response under high charge injection in two sets of junction diodes which are functionally different from each other i.e. electroluminescent diodes and non-luminescent Si-based diodes. Using the technique of bias-activated differential capacitance response, we investigated the mutual dynamics of different rate processes in different diodes. We explain these observations as the mutual competition of fast and slow electronic transition rates albeit differently. This study provides a better understanding of the physi…
Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The presence of two Dirac peaks in the gating curve of the fabricated device confirms the formation of a p-n junction. At low temperatures, when the electrolyte is frozen intentionally, the photovoltage exhibits a six-fold pattern indicative of the hot electron induced photothermoelectric effect that has also been seen in graphene p-n junctions made using metalli…
With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in graphene photodetectors have been studied extensively in the past years. However, the knowledge about efficient light conversion at graphene pn-junctions has not yet been translated into high-performance devices. Here, we present a graphene photodetector integrated on a silicon slot-waveguide, acting as a dual-gate to create a pn-junction in the optical absorption region of the device. While at zero …
The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, here we present an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 10^4, while under light exposure they e…
We report on a room-temperature photodetector utilizing semimetal bismuth nanowire arrays coupled with graphene. The structural flatness and high electron mobility of graphene exhibit great potential for future generations of electronic materials. Bismuth nanowire arrays coupled with graphene have strong absorption because of light trapping. Bismuth (Bi), as a semimetal, complements graphene's gapless and mobility characteristics. Bi also features a long screening length (4 nm) comparable to semiconductors. Raman spectroscopy is used to characterize the charge transfer between graphene and Bi.…
We have measured individual tunneling events and Coulomb step shapes in single-electron boxes with opaque superconductor-normal metal tunnel junctions. We observe anomalous broadening of the Coulomb step with decreasing temperature in a manner that is consistent with activation of first-order tunneling events by an external dissipative electromagnetic environment. We demonstrate that the rates for energetically unfavourable tunneling events saturate to finite values at low temperatures, and that the saturation level can be suppressed by more than an order of magnitude by a capacitive shunt nea…
Using a Josephson junction interferometer (DC SQUID) as a microwave source for irradiating a single-electron trap, both devices fabricated on the same chip, we study the process of photon-assisted tunneling as an effective mechanism of single photon detection. High sensitivity down to a very small oscillation amplitude $v_{\rm J} \sim$ 10 nV$\ll E_{\rm act} \lesssim hf_{\rm J}$ and down to low photon absorption rates $Γ_{\rm ph} \sim$ (1--50)Hz, as well as a clear threshold type of operation with an activation energy $E_{\rm act} \sim$ 400 $μ$eV, are demonstrated for the trap with respect to t…
We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated doping densities. First we extract the intrinsic gate capacitance of the device geometry from a device that shows Coulomb blockade at 13 mK with over 500 Coulomb peaks across a gate voltage range of 6 V indicating the formation of a single island in the entire nanowire channel. In two other devices, doped Si:P $4\times10^{19}\,\text{cm}^{-3}$ and $2\times10^{20}\,\text{cm}^{-3}$, we observe quantum …
Ultrafast photo-thermoelectric currents in graphene junctions in the mid-infrared
Walter Schottky Institute and Physics Department, Technical University of Munich（慕尼黑工业大学瓦尔特·肖特基研究所和物理系）；Munich Center for Quantum Science and Technology (MCQST)（慕尼黑量子科学与技术中心）；TUM School of Natural Sciences, Department of Chemistry and Atomistic Modeling Center, Munich Data Science Institute, Technical University of Munich（慕尼黑工业大学自然科学学院化学系与原子模拟中心、慕尼黑数据科学研究所）；Two-Dimensional Crystal Consortium, The Pennsylvania State University（宾夕法尼亚州立大学二维晶体联盟）；Department of Materials Science and Engineering, The Pennsylvania State University（宾夕法尼亚州立大学材料科学与工程系）；Department of Chemistry, The Pennsylvania State University（宾夕法尼亚州立大学化学系）；Department of Physics, The Pennsylvania State University（宾夕法尼亚州立大学物理系）；Department of Engineering Science and Mechanics, The Pennsylvania State University（宾夕法尼亚州立大学工程力学系）
Integrating and manipulating the nano-optoelectronic properties of Van der Waals heterostructures can enable unprecedented platforms for photodetection and sensing. The main challenge of infrared photodetectors is to funnel the light into a small nanoscale active area and efficiently convert it into an electrical signal. Here, we overcome all of those challenges in one device, by efficient coupling of a plasmonic antenna to hyperbolic phonon-polaritons in hexagonal-BN to highly concentrate mid-infrared light into a graphene pn-junction. We balance the interplay of the absorption, electrical an…
The ability to resolve the polarization of light with on-chip devices represents an urgent problem in optoelectronics. The detectors with polarization resolution demonstrated so far mostly require multiple oriented detectors or movable external polarizers. Here, we experimentally demonstrate the feasibility to resolve the polarization of mid-infrared light with a single chemical-vapor-deposited graphene-channel device with dissimilar metal contacts. This possibility stems from an unusual dependence of photoresponse at graphene-metal junctions on gate voltage and polarization angle. Namely, the…
Laboratory for Solid State Physics, ETH Zurich（苏黎世联邦理工学院固体物理实验室）；Quantum Center, ETH Zurich（苏黎世联邦理工学院量子中心）；Research Center for Materials Nanoarchitectonics, National Institute for Materials Science（国家材料科学研究所材料纳米架构研究中心）；Research Center for Electronic and Optical Materials, National Institute for Materials Science（国家材料科学研究所电子与光学材料研究中心）；Institute for Theoretical Physics, ETH Zurich（苏黎世联邦理工学院理论物理研究所）
