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arXiv 1012.4304cond-mat.mtrl-scicond-mat.mes-hall
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纳米线中的焦耳热

Joule heating in nanowires

Hans Fangohr, Dmitri S. Chernyshenko, Matteo Franchin, Thomas Fischbacher, Guido Meier

摘要:

我们研究了焦耳加热从电流流经铁磁纳米线的纳米线的温度和纳米线生长的衬底上的温度的影响。空间电流密度分布,相关的热产生,和热的扩散内的纳米线和衬底进行了模拟。我们研究了几种不同的纳米线和收缩几何形状以及不同的基板:(薄)氮化硅膜,(厚)硅晶片,和(厚)金刚石晶片。计算作为时间函数的空间分辨的温度增加。对于有效的三维基板(其中基板厚度大大超过纳米线长度),我们确定通过基板的热传播的三个不同的制度:制度(i),其中纳米线温度增加近似几何作为时间的函数。在这种情况下,纳米线温度由You等人[APL 89,222513(2006)]很好地分析描述。我们提供了时间t_c的解析表达式,它标志着You模型的适用性上限。在t_c之后,热流进入状态(ii),其中纳米线温度保持恒定,而半球形热锋将热量从线带走并进入衬底。当热前沿到达衬底的边界时,进入状态(iii),其中纳米线和衬底温度开始快速增加。对于有效的二维衬底(其中纳米线长度大大超过衬底厚度),只有一种情况,其中在热前沿到达衬底边界之前,温度随时间大幅增加。我们提供了一个分析表达式,有效的所有脉冲持续时间,允许一个精确地计算薄基板上的纳米线的温度增加。

英文摘要:

We study the effect of Joule heating from electric currents flowing through ferromagnetic nanowires on the temperature of the nanowires and on the temperature of the substrate on which the nanowires are grown. The spatial current density distribution, the associated heat generation, and diffusion of heat is simulated within the nanowire and the substrate. We study several different nanowire and constriction geometries as well as different substrates: (thin) silicon nitride membranes, (thick) silicon wafers, and (thick) diamond wafers. The spatially resolved increase in temperature as a function of time is computed. For effectively three-dimensional substrates (where the substrate thickness greatly exceeds the nanowire length), we identify three different regimes of heat propagation through the substrate: regime (i), where the nanowire temperature increases approximately logarithmically as a function of time. In this regime, the nanowire temperature is well-described analytically by You et al. [APL 89, 222513 (2006)]. We provide an analytical expression for the time t_c that marks the upper applicability limit of the You model. After t_c, the heat flow enters regime (ii), where the nanowire temperature stays constant while a hemispherical heat front carries the heat away from the wire and into the substrate. As the heat front reaches the boundary of the substrate, regime (iii) is entered where the nanowire and substrate temperature start to increase rapidly. For effectively two-dimensional substrates (where the nanowire length greatly exceeds the substrate thickness), there is only one regime in which the temperature increases logarithmically with time for large times, before the heat front reaches the substrate boundary. We provide an analytical expression, valid for all pulse durations, that allows one to accurately compute this temperature increase in the nanowire on thin substrates.

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