石墨烯晶格缺陷对载流子散射的影响
Effects of lattice defects in graphene on the scattering of Charge Carriers
摘要：
我们研究了石墨烯准粒子的散射拓扑缺陷，代表孔，五边形和七边形。对于空穴的情况下，我们得到的相移，并发现，在低浓度下，他们似乎是无关的电子输运，电阻率的贡献可以忽略不计。每当在晶格中引入五边形，费米子流被限制在其中一个五边形附近运动时，我们就会意识到，这样的电流以一个角度散射，该角度仅取决于五边形的数量和电流所处的一侧。这种偏差可以通过杨氏实验，通过由五边形散射的两个电流分支之间的干涉图案来确定。在七边形的情况下，这样的电流也被散射，但它从缺陷处发散，防止了同一个七边形的两束电流之间的干扰。
英文摘要：
We study the scattering of graphene quasiparticles by topological defects, represented by holes, pentagons and heptagons. For the case of holes, we obtain the phase shift and found that at low concentration they appear to be irrelevant for the electron transport, giving a negligible contribution to the resistivity. Whenever pentagons are introduced into the lattice and the fermionic current is constrained to move near one of them we realize that such a current is scattered with an angle that depends only on the number of pentagons and on the side the current taken. Such a deviation may be determined by means of a Young-type experiment, through the interference pattern between the two current branches scattered by a pentagon. In the case of a heptagon such a current is also scattered but it diverges from the defect, preventing a interference between two beams of current for the same heptagon.
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