石墨烯中拓扑缺陷引起的载流子散射
Scattering of charge carriers in graphene induced by topological defects
摘要：
我们研究了石墨烯准粒子的散射拓扑缺陷，代表孔，五边形和七边形。对于空穴，我们发现，在低浓度下，它们对电阻率的贡献可以忽略不计。无论何时引入五边形或七边形，我们都知道费米子电流被缺陷散射。
英文摘要：
We study the scattering of graphene quasiparticles by topological defects, represented by holes, pentagons and heptagons. For holes, we found that at low concentration they give a negligible contribution to the resistivity. Whenever pentagons or heptagons are introduced we realize that a fermionic current is scattered by defects.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
